应用于亚阈值LSI的基于体效应的mosfet纳米功率开关电容基准电压

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628130

Hao Zhang, Mengshu Huang, Yimeng Zhang, Xutao Li, T. Yoshihara

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引用次数: 3

摘要

将开关电容技术与mosfet中的体效应相结合，采用0.18 μm标准CMOS技术实现了纳米功率CMOS基准电压。在不使用任何元件细分的情况下产生低输出破断阈值限制，从而节省芯片面积。测量结果表明，输出电压约为123.3 mV，温度系数约为17.6 ppm/°C，线路灵敏度为0.15% /V。电源电压为1v时，电源电流小于90na。占地面积约0.03 mm2。

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A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI

Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm2.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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