发布求助
文献互助 智能选刊 最新文献

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)最新文献

筛选
英文 中文
Hot carrier degradation and ESD in submicron CMOS technologies: how do they interact? 亚微米CMOS技术中的热载流子降解和ESD:它们是如何相互作用的?
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/EOSESD.2000.890087
G. Groeseneken
{"title":"Hot carrier degradation and ESD in submicron CMOS technologies: how do they interact?","authors":"G. Groeseneken","doi":"10.1109/EOSESD.2000.890087","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890087","url":null,"abstract":"In this paper, the phenomenon of channel hot carrier (CHC) induced degradation in transistors and its relation to ESD reliability is reviewed. The principles of CHC and the trade-off with ESD during technology development from channel/drain engineering, including consideration for mixed voltage designs, are discussed. Also, latent damage due to ESD-induced effects on CHC are considered. Finally, it is shown how the generation of hot carriers can help in the optimization of the performance of advanced ESD protection concepts.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122873753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
In-situ spin stand ESD testing of giant magnetoresistive (GMR) recording heads 巨磁阻(GMR)记录磁头的原位自旋支架静电放电测试
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/EOSESD.2000.890099
A. Wallash
{"title":"In-situ spin stand ESD testing of giant magnetoresistive (GMR) recording heads","authors":"A. Wallash","doi":"10.1109/EOSESD.2000.890099","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890099","url":null,"abstract":"An experimental set-up for automated in-situ ESD testing of giant magnetoresistive (GMR) heads flying on a spin stand is described. The effects of human body model (HBM) ESD current transients on three different GMR head designs are reported. Results show that exposure to HBM ESD can seriously degrade the quality and shape of the cross-track profiles. Magnetic instability was also seen to increase with increasing ESD damage. It is concluded that ESD damage results in serious and undesirable changes in the micromagnetic response of GMR sensors and can result in increased magnetic instability.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129493860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Advances in magneto optical static event detector technology 磁光静态事件探测技术进展
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/6104.930955
N. Jacksen, L. Nelsen, D. Boehm, T. Odom
{"title":"Advances in magneto optical static event detector technology","authors":"N. Jacksen, L. Nelsen, D. Boehm, T. Odom","doi":"10.1109/6104.930955","DOIUrl":"https://doi.org/10.1109/6104.930955","url":null,"abstract":"Magneto-optic static event detectors, introduced at the 1998 EOS/ESD Symposium, have been demonstrated as a useful tool to detect low level transients that damage MR and GMR heads. Improvements in magneto-optic film characteristics, device design, and wafer fabrication methods will result in enhanced sensitivities to those transients. Improvements in packaging and performance repeatability are described.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125612222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A case study on hidden ESD events of GMR HGA dynamic test fixture GMR HGA动态测试夹具ESD隐藏事件的实例研究
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/EOSESD.2000.890042
R. Bordeos, J. Kagaoan
{"title":"A case study on hidden ESD events of GMR HGA dynamic test fixture","authors":"R. Bordeos, J. Kagaoan","doi":"10.1109/EOSESD.2000.890042","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890042","url":null,"abstract":"This paper reveals an ESD event that is usually overlooked during head gimbal assembly (HGA) dynamic test operation and how a solution to the problem has been established. Experiments were conducted to determine a hidden ESD source by using two different designs of dynamic test shoe. ESD events were captured during unloading and reloading of the HGA bridge flex circuit (BFC) pad to the old shoe fixture (original design). Tribocharging and field-induced charging are both suspects in the observed failures. These results are consistent with CDM type ESD failure. Results show how this event caused severe magnetic or melting damage to the GMR sensor. We were able to measure of about 155 V (negative charge) on BFC kapton after unloading from the old shoe dynamic electrical test (DET) fixture. Our fast digital oscilloscope captured 131.2 mA (max) at nanosecond current transients during metal contact of the MR exposed lead. This causes great yield loss at HGA level manufacturing for that particular prototype program. A solution was established by re-designing the BFC insertion nest and clamp of the shoe fixture and using dissipative base and clamp materials. An enhanced design is also incorporated whereby the fixture can stand alone during insertion of BFC to the nest and unloading from the shoe clamp. Therefore, this new fixture (modified design) minimizes the risk of tribocharge voltage against the BFC kapton and metal contact event.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125658329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Measurement technique developed to evaluate transient EMI in a photo bay with and without air ionization 开发了一种测量技术，用于评估有和没有空气电离的光电舱内的瞬态电磁干扰
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/EOSESD.2000.890106
A. Rudack, M. Pendley, L. Levit
{"title":"Measurement technique developed to evaluate transient EMI in a photo bay with and without air ionization","authors":"A. Rudack, M. Pendley, L. Levit","doi":"10.1109/EOSESD.2000.890106","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890106","url":null,"abstract":"A new technique for quantifying the magnitude and the rate of ESD-induced transient electromagnetic interference (ESD-EMI) was developed, and is presented along with results of measurements of the rate of such EMI with and without ionization in Photo Bay 2 at International SEMATECH. The rate of ESD-EMI events recorded in the bay was 30 times greater with the ionizers off than with them on. The technique used a very high sampling rate (4 GS/sec) digitizing oscilloscope, with a wide bandwidth (>1.5 GHz), and a histogram technique to acquire a spectrum of amplitudes of the transient events.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126513723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Charge induction on GMR recording heads caused by AC power fields 交流电场对GMR记录磁头产生的电荷感应
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/EOSESD.2000.890096
M. Honda
{"title":"Charge induction on GMR recording heads caused by AC power fields","authors":"M. Honda","doi":"10.1109/EOSESD.2000.890096","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890096","url":null,"abstract":"A new charge induction mechanism on a head gimbal assembly (HGA) is discussed. According to the dynamic charge induction experiments, there is 30-50 pC of charge induced on the HGA base plate by a small displacement (speed about 10 cm/s) in the 50 Hz AC power fields emanating from the AC charged plate (100 V-rms). During the manufacturing and testing processes, a chance of AC induced ESD could result due to metal-metal contacts between the base plate and the other static charge free objects under a normal ESD control environment.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127062865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ESD damage thresholds: history and prognosis [magnetic heads] ESD损伤阈值:历史与预后[磁头]
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/EOSESD.2000.890091
B. Perry
{"title":"ESD damage thresholds: history and prognosis [magnetic heads]","authors":"B. Perry","doi":"10.1109/EOSESD.2000.890091","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890091","url":null,"abstract":"ESD damage thresholds have been declining almost monotonically ever since we started to use MR heads. This work explains that this trend is the result of heat flow, and demonstrates by theory and experiment that the damage threshold for human body model (HBM) transients is roughly proportional to read width.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114723444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Investigation of ESD transient EMI causing spurious clock track read transitions during servo-write ESD瞬态电磁干扰在伺服写入过程中引起伪时钟轨迹读跃迁的研究
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/EOSESD.2000.890051
B. Yap, C. R. Patton
{"title":"Investigation of ESD transient EMI causing spurious clock track read transitions during servo-write","authors":"B. Yap, C. R. Patton","doi":"10.1109/EOSESD.2000.890051","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890051","url":null,"abstract":"A simple loop antenna detector was used to successfully troubleshoot reference clock failures during servo-write that were caused by the EMI from distant metal-to-metal ESD events. Covering one metal surface with a dissipative material reduced the discharge rate and EMI. This approach proved effective for stopping such ESD EMI induced production yield loss. This case study concludes that it is necessary to also control those areas immediately adjacent to ESD protected production lines to protect these areas against strong indirect ESD EMI.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117161401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electrostatic voltmeter and fieldmeter measurements on GMR recording heads 静电电压表和磁场计在GMR记录磁头上的测量
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/EOSESD.2000.890127
D. Pritchard
{"title":"Electrostatic voltmeter and fieldmeter measurements on GMR recording heads","authors":"D. Pritchard","doi":"10.1109/EOSESD.2000.890127","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890127","url":null,"abstract":"The purpose of this paper is to provide information on the use of electrostatic fieldmeters and electrostatic voltmeters to make field and voltage measurements on GMR recording heads. Charge is often impractical to measure directly, requiring that the charged object be transferred into a Faraday enclosure and then measured using a coulombmeter. When this transfer method cannot be used, charge is often evaluated indirectly by detecting the electrostatic field associated with the charge using an electrostatic fieldmeter or an electrostatic voltmeter. However, electrostatic fieldmeter and electrostatic voltmeter measurements are often difficult to interpret. The goal of this paper is to introduce several types of electrostatic fieldmeters and electrostatic voltmeters, explain the operating principles of each type of instrument, and to describe some of the capabilities and limitations of each type for making measurements on small objects such as GMR recording heads.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124506068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Investigation of GMR sensor microstructural changes induced by HBM ESD using advanced microscopy approach HBM静电放电诱导GMR传感器微结构变化的先进显微技术研究
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/EOSESD.2000.890122
R. Bordeos, Zhang Lianzhu, S. Hung, C. Wong
{"title":"Investigation of GMR sensor microstructural changes induced by HBM ESD using advanced microscopy approach","authors":"R. Bordeos, Zhang Lianzhu, S. Hung, C. Wong","doi":"10.1109/EOSESD.2000.890122","DOIUrl":"https://doi.org/10.1109/EOSESD.2000.890122","url":null,"abstract":"In theory, the microstructure of any material dictates its macroscopic properties. This study explores the microstructure of the GMR reader characterized during gradual ESD stressing and with the aid of the advanced analytical tools of AFM/MFM after enhanced imaging of GMR sensors by surface ion milling. It is known that ESD events can occur and manifest themselves exclusively either physically (melting of sensor element) or magnetically (sudden drop in electrical parameters when plotted against stress voltage) in GMR heads. A simulation study was directed using commercial HBM and dynamic electrical test machines to produce different types of ESD failure events. Preliminary results showed that ESD stressed and ESD-free GMR heads can be characterized and differentiated from one another using the simple surface technique of MFM. By using the combined analytical techniques which are particular to AFM and MFM coupled with methodical and systematic failure analysis, we are able to observe in-situ the previously unknown ESD phenomena unique to GMR heads.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126724260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信