Investigation of GMR sensor microstructural changes induced by HBM ESD using advanced microscopy approach

R. Bordeos, Zhang Lianzhu, S. Hung, C. Wong
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引用次数: 1

Abstract

In theory, the microstructure of any material dictates its macroscopic properties. This study explores the microstructure of the GMR reader characterized during gradual ESD stressing and with the aid of the advanced analytical tools of AFM/MFM after enhanced imaging of GMR sensors by surface ion milling. It is known that ESD events can occur and manifest themselves exclusively either physically (melting of sensor element) or magnetically (sudden drop in electrical parameters when plotted against stress voltage) in GMR heads. A simulation study was directed using commercial HBM and dynamic electrical test machines to produce different types of ESD failure events. Preliminary results showed that ESD stressed and ESD-free GMR heads can be characterized and differentiated from one another using the simple surface technique of MFM. By using the combined analytical techniques which are particular to AFM and MFM coupled with methodical and systematic failure analysis, we are able to observe in-situ the previously unknown ESD phenomena unique to GMR heads.
HBM静电放电诱导GMR传感器微结构变化的先进显微技术研究
理论上,任何材料的微观结构决定了它的宏观特性。本研究利用先进的AFM/MFM分析工具,在表面离子铣削增强GMR传感器成像后,探索了GMR阅读器在逐渐ESD应力下的微观结构特征。众所周知,ESD事件可以在GMR磁头中发生并表现为物理(传感器元件熔化)或磁性(与应力电压相对时电气参数突然下降)。利用商业HBM和动态电气试验机进行了模拟研究,以产生不同类型的ESD故障事件。初步结果表明,利用MFM的简单表面技术,可以对受静电和无静电的GMR磁头进行表征和区分。通过使用AFM和MFM特有的组合分析技术,结合系统和系统的失效分析,我们能够在现场观察到以前未知的GMR磁头特有的ESD现象。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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