Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)最新文献

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High current characteristics of devices in a 0.18 /spl mu/m CMOS technology 器件在0.18 /spl mu/m CMOS技术中的高电流特性

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/EOSESD.2000.890089

E. Worley, A. Salem, Y. Sittampalam

引用次数: 4

ESD evaluation of tunneling magnetoresistive (TMR) devices 隧道磁阻(TMR)器件的ESD评价

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI: 10.1109/EOSESD.2000.890118

A. Wallash, J. Hillman, Dexin Wang

引用次数: 7

New methods for measuring resistance and charge decay of worksurfaces 测量工作表面电阻和电荷衰减的新方法

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 1900-01-01 DOI: 10.1109/EOSESD.2000.890038

H. Uchida, H. Kurosaki, T. Numaguchi

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引用次数: 0

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