器件在0.18 /spl mu/m CMOS技术中的高电流特性

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI:10.1109/EOSESD.2000.890089

E. Worley, A. Salem, Y. Sittampalam

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引用次数: 4

摘要

ESD保护网络可以涉及几种不同类型的设备和相关的互连。本文研究了几种器件的高电流性能，这些器件可以在0.18微米CMOS技术的I/O单元中找到。所表征的器件包括带和不带N个井漏电阻的nfet，包括分段电阻、N个井漏电阻、N个通道场回跳器件、pfet和二极管。还检查了金属，触点和过孔的性能。对二极管互连的失效点和寄生电阻进行了分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High current characteristics of devices in a 0.18 /spl mu/m CMOS technology

ESD protection networks can involve several different types of devices and associated interconnect. This paper examines the high current performance of several devices that can be found in the I/O cells of a 0.18 micron CMOS technology. Devices characterized include NFETs with and without N well drain resistors including segmented resistors, N well resistors, N channel field snap-back devices, PFETs, and diodes. Also examined is the performance of metal, contacts, and vias. Diode interconnect is also analyzed with respect to failure point and parasitic resistance.

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来源期刊

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

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