隧道磁阻(TMR)器件的ESD评价

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI:10.1109/EOSESD.2000.890118

A. Wallash, J. Hillman, Dexin Wang

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引用次数: 7

摘要

在这项工作中，我们研究并比较了隧道磁阻(TMR)传感器的介电击穿和人体模型静电放电(ESD)失效水平。开发了TMR器件的等效电路，并将其应用于SPICE电路仿真中，研究了其对静电放电的响应。介电击穿平均为2.3 V, ESD测试显示器件在8.6 V HBM时发生短路。

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ESD evaluation of tunneling magnetoresistive (TMR) devices

In this work, we study and compare the dielectric breakdown and human body model electrostatic discharge (ESD) failure levels of tunneling magnetoresistive (TMR) sensors. An equivalent circuit for the TMR device is developed and used in SPICE circuit simulations to study its response to electrostatic discharge. Dielectric breakdown averaged 2.3 V and ESD testing showed device shorting at 8.6 V HBM.

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Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

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