磁光静态事件探测技术进展

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI:10.1109/6104.930955

N. Jacksen, L. Nelsen, D. Boehm, T. Odom

{"title":"磁光静态事件探测技术进展","authors":"N. Jacksen, L. Nelsen, D. Boehm, T. Odom","doi":"10.1109/6104.930955","DOIUrl":null,"url":null,"abstract":"Magneto-optic static event detectors, introduced at the 1998 EOS/ESD Symposium, have been demonstrated as a useful tool to detect low level transients that damage MR and GMR heads. Improvements in magneto-optic film characteristics, device design, and wafer fabrication methods will result in enhanced sensitivities to those transients. Improvements in packaging and performance repeatability are described.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Advances in magneto optical static event detector technology\",\"authors\":\"N. Jacksen, L. Nelsen, D. Boehm, T. Odom\",\"doi\":\"10.1109/6104.930955\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Magneto-optic static event detectors, introduced at the 1998 EOS/ESD Symposium, have been demonstrated as a useful tool to detect low level transients that damage MR and GMR heads. Improvements in magneto-optic film characteristics, device design, and wafer fabrication methods will result in enhanced sensitivities to those transients. Improvements in packaging and performance repeatability are described.\",\"PeriodicalId\":332394,\"journal\":{\"name\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/6104.930955\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/6104.930955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在1998年EOS/ESD研讨会上介绍的磁光静态事件探测器已经被证明是一种有用的工具，可以检测损坏MR和GMR磁头的低电平瞬变。磁光薄膜特性、器件设计和晶圆制造方法的改进将提高对这些瞬变的灵敏度。描述了封装和性能可重复性方面的改进。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Advances in magneto optical static event detector technology

Magneto-optic static event detectors, introduced at the 1998 EOS/ESD Symposium, have been demonstrated as a useful tool to detect low level transients that damage MR and GMR heads. Improvements in magneto-optic film characteristics, device design, and wafer fabrication methods will result in enhanced sensitivities to those transients. Improvements in packaging and performance repeatability are described.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

自引率

0.00%

发文量