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2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)最新文献

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Electrical and optical localisation of leakage current and breakdown point in SiOC:H low-k dielectrics SiOC:H低k电介质中泄漏电流和击穿点的电学和光学定位
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2020-05-01 DOI: 10.1109/ICMTS48187.2020.9107909
Matthias Vidal-Dhô, Q. Hubert, P. Gonon, B. Pélissier, Philippe Lentrein, Patrice Ray, J. Moragues, P. Fornara
{"title":"Electrical and optical localisation of leakage current and breakdown point in SiOC:H low-k dielectrics","authors":"Matthias Vidal-Dhô, Q. Hubert, P. Gonon, B. Pélissier, Philippe Lentrein, Patrice Ray, J. Moragues, P. Fornara","doi":"10.1109/ICMTS48187.2020.9107909","DOIUrl":"https://doi.org/10.1109/ICMTS48187.2020.9107909","url":null,"abstract":"This paper presents a novel methodology to observe the leakage current origin in SiOC:H low-$kappa$ intermetallic dielectric as well as a method to localise electrically the breakdown point in usual comb/serpentine/comb structures. Our results indicate that high leakage current is a consequence of a global moisture-induced SiOC:H dielectric modification and demonstrate that EMMI observations of such leakage current is possible. Besides, we have disclosed and validated a fast electrical breakdown localisation method fully compatible with automated test steps such as Parametric Test to track eventual weaknesses in reliability structures for instance.","PeriodicalId":327379,"journal":{"name":"2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125896447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coaxial Circular Test Structure Applicable to both Ohmic and Schottky Characteristics for ZnO/Si Heterojunctions Assessment 适用于ZnO/Si异质结欧姆和肖特基特性评估的同轴圆形测试结构
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2020-05-01 DOI: 10.1109/ICMTS48187.2020.9107928
Norihiro Miyazawa, Naoto Usami, Haibin Wang, T. Kubo, H. Segawa, Y. Mita, A. Higo
{"title":"Coaxial Circular Test Structure Applicable to both Ohmic and Schottky Characteristics for ZnO/Si Heterojunctions Assessment","authors":"Norihiro Miyazawa, Naoto Usami, Haibin Wang, T. Kubo, H. Segawa, Y. Mita, A. Higo","doi":"10.1109/ICMTS48187.2020.9107928","DOIUrl":"https://doi.org/10.1109/ICMTS48187.2020.9107928","url":null,"abstract":"Characterizing junction is essential in new devices research. We are investigating a hybrid infrared-sensitive opto-electronic device on silicon-based large scale integrated circuits, among others, PbS colloidal quantum dots/ZnO/Si hybrid IR detector. To assess such new materials we propose a coaxial circular test structure. The structure is composed of common-central inner (circular) and outer (doughnut) electrodes. In addition to traditional Circular TLM (CTLM) test structure, which was used for ohmic contact, the junction type (ohmic or Schottky) can be identified and quantitatively be analyzed by measuring various gaps and surface areas of the proposed structure (Coaxial CTLM, CCTLM). The measurement using test structure on our n-type ZnO / n-type Si heterojunction sample revealed that the junction was Schottky type, which was opposite to our expectation.","PeriodicalId":327379,"journal":{"name":"2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132318067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of cut-back method and optical backscatter reflectometry for wafer level waveguide characterization 圆片级波导表征的切回法与光学后向散射反射法之比较
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2020-05-01 DOI: 10.1109/ICMTS48187.2020.9107905
A. Peczek, C. Mai, G. Winzer, L. Zimmermann
{"title":"Comparison of cut-back method and optical backscatter reflectometry for wafer level waveguide characterization","authors":"A. Peczek, C. Mai, G. Winzer, L. Zimmermann","doi":"10.1109/ICMTS48187.2020.9107905","DOIUrl":"https://doi.org/10.1109/ICMTS48187.2020.9107905","url":null,"abstract":"The optimum optical characterization method suitable for wafer level waveguide testing is an important issue for silicon photonic methodology. In this paper we focus on comparing the two most widespread measurement techniques: cut-back and optical backscatter reflectometry.","PeriodicalId":327379,"journal":{"name":"2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)","volume":"7 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126199863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A Rapid, Reliable and Less-destructive On-chip Mass Measurement for 3D Composite Material Testing Microstructures 一种快速、可靠、低破坏性的片上质量测量方法用于三维复合材料微结构测试
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2020-05-01 DOI: 10.1109/ICMTS48187.2020.9107932
G. Hwang, C. David, A. Paris, D. Decanini, Ayako Mizushima, Y. Mita
{"title":"A Rapid, Reliable and Less-destructive On-chip Mass Measurement for 3D Composite Material Testing Microstructures","authors":"G. Hwang, C. David, A. Paris, D. Decanini, Ayako Mizushima, Y. Mita","doi":"10.1109/ICMTS48187.2020.9107932","DOIUrl":"https://doi.org/10.1109/ICMTS48187.2020.9107932","url":null,"abstract":"Mass measurements of complex three-dimensional microstructures are essential to the design and development of microsystems. However, the mass measurements of such microstructures require several manipulation steps which are not well controlled. We have demonstrated a rapid, reliable and less-destructive on-chip mass measurement method by incorporating with AFM micromanipulation. It is based on AFM pick-measure-place micromanipulation using Van der Waals attraction and the mass measurement by resonant frequency shift. The measurement sensitivity revealed to be 25 Hz/pg and it could be promising to characterize MEMS with complex geometries and composite materials.","PeriodicalId":327379,"journal":{"name":"2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128892412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ICMTS 2020 Front Matters ICMTS 2020前沿事项
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2020-05-01 DOI: 10.1109/icmts48187.2020.9107921
Norihiro Miyazawa, Naoto Usami, Haibin Wang, T. Kubo, H. Segawa, Yoshio, Mita, Akio Higo, Chao Liu, Jianyu Fu, Ying Hou, Ruiwen Liu, Qiong Zhou, Dapeng Chen, Etsuko Ota, Takeshi Momose, Y. Mita, A. Buchoux, Prashant Agrawal, G. Wells, J. Terry, G. McHale, K. Sefiane, A. Stokes
{"title":"ICMTS 2020 Front Matters","authors":"Norihiro Miyazawa, Naoto Usami, Haibin Wang, T. Kubo, H. Segawa, Yoshio, Mita, Akio Higo, Chao Liu, Jianyu Fu, Ying Hou, Ruiwen Liu, Qiong Zhou, Dapeng Chen, Etsuko Ota, Takeshi Momose, Y. Mita, A. Buchoux, Prashant Agrawal, G. Wells, J. Terry, G. McHale, K. Sefiane, A. Stokes","doi":"10.1109/icmts48187.2020.9107921","DOIUrl":"https://doi.org/10.1109/icmts48187.2020.9107921","url":null,"abstract":"","PeriodicalId":327379,"journal":{"name":"2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132093691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Automated Wafer-Level Characterisation of Electrochemical Test Structures for Wafer Scanning 晶圆扫描电化学测试结构的自动晶圆级表征
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2020-05-01 DOI: 10.1109/ICMTS48187.2020.9107903
I. Schmueser, C. Mackay, Fiona Moore, Kayleigh Doherty, J. P. Elliott, A. Mount, A. Walton, Stewart Smith, J. Terry
{"title":"Automated Wafer-Level Characterisation of Electrochemical Test Structures for Wafer Scanning","authors":"I. Schmueser, C. Mackay, Fiona Moore, Kayleigh Doherty, J. P. Elliott, A. Mount, A. Walton, Stewart Smith, J. Terry","doi":"10.1109/ICMTS48187.2020.9107903","DOIUrl":"https://doi.org/10.1109/ICMTS48187.2020.9107903","url":null,"abstract":"This paper presents an automated system for the electrochemical characterization of micro-scale test structures at the wafer level, with the objective to identify good devices suitable for full characterization and packaging. The integration of the onwafer characterization enables an initial quality assessment of the devices prior to packaging and thus minimizes the packaging of faulty sensors. The prototype system integrates the essential elements for automated on-wafer in-line electrochemical systems characterization, thereby confirming the suitability of this approach for implementation on commercial automated probers, which are generally available for parametric testing. The system’s capabilities are demonstrated for a standard three-electrode cell design typically employed in electrochemical sensing applications. Finally, the system’s potential is established by wafer mapping the performance of electrochemical microelectrode devices through integration with a semi-automatic probe station.","PeriodicalId":327379,"journal":{"name":"2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130796370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of nMOSFET Structures for Millimeter-Wave Frequencies in 0.18-μm CMOS technology 0.18 μm CMOS技术下毫米波频率nMOSFET结构的比较
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2020-05-01 DOI: 10.1109/ICMTS48187.2020.9107912
Toyoyuki Hagiwara, Natsu Yamaki, K. Takano, Y. Umeda
{"title":"Comparison of nMOSFET Structures for Millimeter-Wave Frequencies in 0.18-μm CMOS technology","authors":"Toyoyuki Hagiwara, Natsu Yamaki, K. Takano, Y. Umeda","doi":"10.1109/ICMTS48187.2020.9107912","DOIUrl":"https://doi.org/10.1109/ICMTS48187.2020.9107912","url":null,"abstract":"We present two nMOSFET structures with the high maximum oscillation frequency (fmax) in 1P5M 0.18-$mu$m CMOS technology to use it for millimeter-wave applications. One is a compact-type structure, and another is a round-table-type structure. By reducing their parasitics, we achieve the fmax of 95 GHz, which is approximately 2 times or more compared to that of the conventional structure. It is shown that the fmax of the round-table-type structure is approximately 10 GHz higher than that of the compact-type structure.","PeriodicalId":327379,"journal":{"name":"2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)","volume":"64 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123126317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel Statistical Modeling and Parameter Extraction Methodology of Cutoff Frequency for RF-MOSFETs 新型rf - mosfet截止频率统计建模及参数提取方法
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2020-05-01 DOI: 10.1109/ICMTS48187.2020.9107914
C. Tanaka, Y. Iguchi, Atsushi Sueoka, S. Yoshitomi
{"title":"Novel Statistical Modeling and Parameter Extraction Methodology of Cutoff Frequency for RF-MOSFETs","authors":"C. Tanaka, Y. Iguchi, Atsushi Sueoka, S. Yoshitomi","doi":"10.1109/ICMTS48187.2020.9107914","DOIUrl":"https://doi.org/10.1109/ICMTS48187.2020.9107914","url":null,"abstract":"The cutoff frequency fluctuation in RF-MOSFET has been investigated. Detailed analysis for capacitance fluctuation as well as the extraction of an intrinsic MOSFET parameter were performed. The extracted process parameters were verified by the framework of effective mobility. The global statistical model of cutoff frequency was successfully developed in terms of capacitance fluctuation, considering intrinsic (channel and bulk charge) and extrinsic (overlap and fringe) capacitance components separately and identifying the major variability sources for cutoff frequency by using extracted parameter.","PeriodicalId":327379,"journal":{"name":"2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)","volume":"6 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116804777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Diode design for studying material defect distributions with avalanche–mode light emission 雪崩模式光发射研究材料缺陷分布的二极管设计
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2020-05-01 DOI: 10.1109/ICMTS48187.2020.9107933
M. Krakers, T. Knežević, K. M. Batenburg, Xingyu Liu, L. Nanver
{"title":"Diode design for studying material defect distributions with avalanche–mode light emission","authors":"M. Krakers, T. Knežević, K. M. Batenburg, Xingyu Liu, L. Nanver","doi":"10.1109/ICMTS48187.2020.9107933","DOIUrl":"https://doi.org/10.1109/ICMTS48187.2020.9107933","url":null,"abstract":"Avalanche-mode visual light emission in Si diodes is shown to be useful for rapid assessment of the origin of non-ideal currents. In the test structure design, it was important to consider the breakdown-voltage distribution, diode size and contact positioning to obtain light-spot appearances at positions related to bulk defect distributions.","PeriodicalId":327379,"journal":{"name":"2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)","volume":"55 24","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114052101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Comparison of Extraction Methods for Threshold Voltage Shift in NBTI Characterization NBTI表征中阈值电压偏移提取方法的比较
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2020-05-01 DOI: 10.1109/ICMTS48187.2020.9107918
Yu-Hsing Cheng, M. Cook, C. Kendrick
{"title":"Comparison of Extraction Methods for Threshold Voltage Shift in NBTI Characterization","authors":"Yu-Hsing Cheng, M. Cook, C. Kendrick","doi":"10.1109/ICMTS48187.2020.9107918","DOIUrl":"https://doi.org/10.1109/ICMTS48187.2020.9107918","url":null,"abstract":"Negative bias temperature instability (NBTI) is a major concern for CMOS reliability. In this paper extraction methods for threshold voltage shift from drain current versus gate voltage transfer curve and from single drain current value in NBTI characterization of PMOS 3.3 V device in a 180 nm CMOS process were compared with good agreement from ultra-fast measurements at microsecond time scale. The analysis provides validation methodology of spot drain current measurement for fast determination of threshold voltage shift in NBTI characterization for the specific technology and device. After validation, spot current method can be applied to standard testers as well as test systems with fast measurement capabilities.","PeriodicalId":327379,"journal":{"name":"2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)","volume":"228 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128017976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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