新型rf - mosfet截止频率统计建模及参数提取方法

2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2020-05-01 DOI:10.1109/ICMTS48187.2020.9107914

C. Tanaka, Y. Iguchi, Atsushi Sueoka, S. Yoshitomi

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引用次数: 1

摘要

研究了RF-MOSFET的截止频率波动。对电容波动进行了详细的分析，并提取了MOSFET的本征参数。利用有效迁移率框架对提取的工艺参数进行了验证。成功地建立了基于电容波动的截止频率全局统计模型，分别考虑本征(通道和体电荷)和本征(重叠和条纹)电容分量，并利用提取的参数识别截止频率的主要变异性源。

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Novel Statistical Modeling and Parameter Extraction Methodology of Cutoff Frequency for RF-MOSFETs

The cutoff frequency fluctuation in RF-MOSFET has been investigated. Detailed analysis for capacitance fluctuation as well as the extraction of an intrinsic MOSFET parameter were performed. The extracted process parameters were verified by the framework of effective mobility. The global statistical model of cutoff frequency was successfully developed in terms of capacitance fluctuation, considering intrinsic (channel and bulk charge) and extrinsic (overlap and fringe) capacitance components separately and identifying the major variability sources for cutoff frequency by using extracted parameter.

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来源期刊

2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)

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