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1995 53rd Annual Device Research Conference Digest最新文献

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Highly reliable non-hermetic InP-based lasers and photodiodes for telecommunication 电信用高度可靠的非密封式inp基激光器和光电二极管
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496304
J. Osenbach, N. Chand, R. Comizzoli, T.L. Evanosky, C.B. Roxlo, W. Tsang
{"title":"Highly reliable non-hermetic InP-based lasers and photodiodes for telecommunication","authors":"J. Osenbach, N. Chand, R. Comizzoli, T.L. Evanosky, C.B. Roxlo, W. Tsang","doi":"10.1109/DRC.1995.496304","DOIUrl":"https://doi.org/10.1109/DRC.1995.496304","url":null,"abstract":"We report on the development of the first non-hermetic InP-based communications lasers and photodiodes that have reliability comparable to their hermetic counterparts. As such, they can be used in terrestrial telecommunication applications such as fiber in the loop and cable TV. The development of the reliable non-hermetic lasers and photodiodes is expected to not only reduce packaging costs, but also lead the way for the novel low cost optoelectronic packaging technologies.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114471496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Microwave power InAlAs/InGaAs double heterojunction bipolar transistors with 1.5 V-low voltage operation 微波功率InAlAs/InGaAs双异质结双极晶体管，1.5 v低压工作
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496283
T. Iwai, H. Shigematsu, H. Yamada, T. Tomioka, S. Sasa, K. Joshin, T. Fujii
{"title":"Microwave power InAlAs/InGaAs double heterojunction bipolar transistors with 1.5 V-low voltage operation","authors":"T. Iwai, H. Shigematsu, H. Yamada, T. Tomioka, S. Sasa, K. Joshin, T. Fujii","doi":"10.1109/DRC.1995.496283","DOIUrl":"https://doi.org/10.1109/DRC.1995.496283","url":null,"abstract":"We report the first demonstration of microwave power performance at an extremely low operation voltage (1.5 V) using InAlAs/InGaAs double-heterojunction bipolar transistors (DHBTs). Fabricated InAlAs/InGaAs DHBTs have a step graded collector structure which suppresses the collector-emitter offset voltage V/sub CE,offset/ of I-V characteristics, enabling us to use power devices at a low operation voltage.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121217096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new logic family based on single-electron transistors 基于单电子晶体管的新型逻辑系列
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496242
R. Chen, A. Korotkov, K. Likharev
{"title":"A new logic family based on single-electron transistors","authors":"R. Chen, A. Korotkov, K. Likharev","doi":"10.1109/DRC.1995.496242","DOIUrl":"https://doi.org/10.1109/DRC.1995.496242","url":null,"abstract":"We demonstrate theoretically the self-consistent operation of a complete family of logic circuits, including invertors, logic gates and flip-flops, based on complementary capacitively-coupled single-electron transistors (C-SETs), and give some estimates for the expected characteristics of these devices.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130190768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
A predictive model describing the upconversion of 1/f noise into AM sideband noise in HBTs 描述hbt中1/f噪声上转换为AM边带噪声的预测模型
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496286
D. Pehlke, A. Sailer, W. Ho, J. Higgins, H. Smith, J. Hebert, M. Vineyard
{"title":"A predictive model describing the upconversion of 1/f noise into AM sideband noise in HBTs","authors":"D. Pehlke, A. Sailer, W. Ho, J. Higgins, H. Smith, J. Hebert, M. Vineyard","doi":"10.1109/DRC.1995.496286","DOIUrl":"https://doi.org/10.1109/DRC.1995.496286","url":null,"abstract":"An analysis of AM noise in AlGaAs-GaAs HBT amplifiers is presented. A predictive model is introduced which allows calculation of AM noise sideband power alongside carrier signals in HBT amplifers as a result of the upconversion of low frequency noise. These sidebands are an unavoidable result of the nonlinear components in microwave oscillators and power amplifiers which causes upconversion of intrinsic low frequency 1/f noise into amplitude modulated (AM) and phase modulated (PM) sidebands about the carrier. AM and PM sidebands degrade the spectral purity of the carrier which ultimately limits system performance in communication systems. Many works have described the upconversion process in microwave oscillators with its dominant phase noise, but less attention has been paid to the AM noise of power amplifiers. This work presents the theory of such noise in AlGaAs-GaAs HBT amplification and details a predictive model that allows calculation of AM noise sidebands for any HBT device.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125412932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Chirped superlattice hot electron transistor 啁啾超晶格热电子晶体管
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496280
C. Nguyen, Hsiang-Chih Sun, Takyiu Liu
{"title":"Chirped superlattice hot electron transistor","authors":"C. Nguyen, Hsiang-Chih Sun, Takyiu Liu","doi":"10.1109/DRC.1995.496280","DOIUrl":"https://doi.org/10.1109/DRC.1995.496280","url":null,"abstract":"We report a novel bandgap-engineered DHBT that (i) eliminates the current-blocking potential barrier between the base and the collector, and (ii) injects hot electrons into the collector at room temperature. Using a Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.49/In/sub 0.51/As DHBT with a composite collector consisting of a 50 nm short-period chirped superlattice (CSL) and a 350 nm Ga/sub 0.47/In/sub 0.53/As collector we demonstrate that the energy band profile and the electrostatic potential arising from the ionized dopants in the base-collector space charge region can be properly tailored to produce a barrier-free conduction band for electrons, similar to that of a homojunction.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123603075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High temperature enhancement-mode NMOS and PMOS devices and circuits in 6H-SiC 高温增强型NMOS和PMOS器件及6H-SiC电路
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496288
D. Slater, L. Lipkin, G.M. Johnson, A. Suvorov, J. Palmour
{"title":"High temperature enhancement-mode NMOS and PMOS devices and circuits in 6H-SiC","authors":"D. Slater, L. Lipkin, G.M. Johnson, A. Suvorov, J. Palmour","doi":"10.1109/DRC.1995.496288","DOIUrl":"https://doi.org/10.1109/DRC.1995.496288","url":null,"abstract":"SiC devices are capable of operating at very high temperatures, allowing placement of electronics in high temperature ambients with limited cooling. The enhancement-mode MOSFET, used extensively in analog and digital circuits, has a particular advantage for high temperature operation because of its insulated gate. Research in this area has produced SiC n-channel depletion-mode devices/circuits and n-channel enhancement-mode digital gates operating from 25 to 300/spl deg/C. In this report, we demonstrate the first p-channel enhancement-mode MOSFETs and integrated circuits with good characteristics from 25 to 500/spl deg/C. The first enhancement-mode NMOS operational amplifier has also been fabricated and tested. The limited transconductance of SiC MOSFETs makes it difficult to produce sizable voltage gains without active loads. This work is focused on solving this problem by developing a potential SiC CMOS technology.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126300302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Imaging spatial and spectral inhomogenous spontaneous emission in high power semiconductor lasers 高功率半导体激光器成像空间和光谱非均匀自发发射
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496308
C. Bethea, W. Fang, Y.K. Chen, S. Chuang
{"title":"Imaging spatial and spectral inhomogenous spontaneous emission in high power semiconductor lasers","authors":"C. Bethea, W. Fang, Y.K. Chen, S. Chuang","doi":"10.1109/DRC.1995.496308","DOIUrl":"https://doi.org/10.1109/DRC.1995.496308","url":null,"abstract":"Spectrally and spatially resolved infrared microscopy has been used to study the steady state internal physics of semiconductor laser diodes. By imaging the longitudinal intra-cavity spontaneous emission profiles of both long wavelength bulk and MQW CMBH Fabry-Perot InGaAsP/InP lasers lasing at 1.48/spl mu/m, we observed the longitudinal spatial hole burning above the lasing threshold.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116778037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1995 53rd Annual Device Research Conference Digest 1995年第53届年度设备研究会议文摘
1995 53rd Annual Device Research Conference Digest Pub Date : 1900-01-01 DOI: 10.1109/DRC.1995.496243
{"title":"1995 53rd Annual Device Research Conference Digest","authors":"","doi":"10.1109/DRC.1995.496243","DOIUrl":"https://doi.org/10.1109/DRC.1995.496243","url":null,"abstract":"ing is permitted with credit to the source. Libraries are permitted to photocopy beyond the limit of U.S. copyright law for private use of patrons those articles in this volume that carry a code at the bottom of the first page, provided the per-copy fee indicated in the code is paid through Copyright Clearance Center, 222 Rosewood Drive, Danvers, MA 01923. For other copying, reprint or republication, write to IEEE Copyrights Manager, IEEE Service Center, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331. All rights reserved. Copyright","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116290906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Demonstration of blue vertical-cavity surface-emitting laser diode 蓝色垂直腔面发射激光二极管的演示
1995 53rd Annual Device Research Conference Digest Pub Date : 1900-01-01 DOI: 10.1109/DRC.1995.496302
S. Yoshii, T. Yokogawa, A. Tsujimura, Y. Sasai, J. Merz
{"title":"Demonstration of blue vertical-cavity surface-emitting laser diode","authors":"S. Yoshii, T. Yokogawa, A. Tsujimura, Y. Sasai, J. Merz","doi":"10.1109/DRC.1995.496302","DOIUrl":"https://doi.org/10.1109/DRC.1995.496302","url":null,"abstract":"We report on the first demonstration of an electrically-pumped blue VCSEL. Laser action was achieved at a wavelength of 484 nm under pulsed current injection at 77 K. The VCSEL structure was composed of a CdZnSe/ZnSe multi-quantum-well active layer, ZnSe cladding layers, and SiO/sub 2//TiO/sub 2/ distributed Bragg reflectors (DBRs). The CdZnSe/ZnSe epitaxial layers were grown by molecular beam epitaxy (MBE) directly on a GaAs (100) substrate at a growth temperature of 270/spl deg/C. The MQW structure consisted of Cd/sub 0.2/Zn/sub 0.8/Se quantum wells and ZnSe barriers.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126441822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel amorphous silicon thin film transistor for AMLCDs 一种新型非晶硅薄膜晶体管
1995 53rd Annual Device Research Conference Digest Pub Date : 1900-01-01 DOI: 10.1109/DRC.1995.496311
Y. Byun, W. den Beer, Moshi Yang, T. Gu
{"title":"A novel amorphous silicon thin film transistor for AMLCDs","authors":"Y. Byun, W. den Beer, Moshi Yang, T. Gu","doi":"10.1109/DRC.1995.496311","DOIUrl":"https://doi.org/10.1109/DRC.1995.496311","url":null,"abstract":"In AMLCD (Active Matrix Liquid Crystal display) applications minimizing Cgs, the parasitic capacitance between gate and source of a-Si TFT, reduces flicker, image retention and gray scale nonuniformity and makes it possible to further increase display size and resolution. Cgs is generally minimized by shrinking the device size, e.g. by using ion doping for the n/sup +/ contact formation in a self-aligned trilayer type TFT. We present a TFT with a novel geometry to reduce Cgs and photosensitivity.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114141489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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