{"title":"啁啾超晶格热电子晶体管","authors":"C. Nguyen, Hsiang-Chih Sun, Takyiu Liu","doi":"10.1109/DRC.1995.496280","DOIUrl":null,"url":null,"abstract":"We report a novel bandgap-engineered DHBT that (i) eliminates the current-blocking potential barrier between the base and the collector, and (ii) injects hot electrons into the collector at room temperature. Using a Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.49/In/sub 0.51/As DHBT with a composite collector consisting of a 50 nm short-period chirped superlattice (CSL) and a 350 nm Ga/sub 0.47/In/sub 0.53/As collector we demonstrate that the energy band profile and the electrostatic potential arising from the ionized dopants in the base-collector space charge region can be properly tailored to produce a barrier-free conduction band for electrons, similar to that of a homojunction.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Chirped superlattice hot electron transistor\",\"authors\":\"C. Nguyen, Hsiang-Chih Sun, Takyiu Liu\",\"doi\":\"10.1109/DRC.1995.496280\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a novel bandgap-engineered DHBT that (i) eliminates the current-blocking potential barrier between the base and the collector, and (ii) injects hot electrons into the collector at room temperature. Using a Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.49/In/sub 0.51/As DHBT with a composite collector consisting of a 50 nm short-period chirped superlattice (CSL) and a 350 nm Ga/sub 0.47/In/sub 0.53/As collector we demonstrate that the energy band profile and the electrostatic potential arising from the ionized dopants in the base-collector space charge region can be properly tailored to produce a barrier-free conduction band for electrons, similar to that of a homojunction.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496280\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496280","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report a novel bandgap-engineered DHBT that (i) eliminates the current-blocking potential barrier between the base and the collector, and (ii) injects hot electrons into the collector at room temperature. Using a Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.49/In/sub 0.51/As DHBT with a composite collector consisting of a 50 nm short-period chirped superlattice (CSL) and a 350 nm Ga/sub 0.47/In/sub 0.53/As collector we demonstrate that the energy band profile and the electrostatic potential arising from the ionized dopants in the base-collector space charge region can be properly tailored to produce a barrier-free conduction band for electrons, similar to that of a homojunction.
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