Imaging spatial and spectral inhomogenous spontaneous emission in high power semiconductor lasers

Abstract

Spectrally and spatially resolved infrared microscopy has been used to study the steady state internal physics of semiconductor laser diodes. By imaging the longitudinal intra-cavity spontaneous emission profiles of both long wavelength bulk and MQW CMBH Fabry-Perot InGaAsP/InP lasers lasing at 1.48/spl mu/m, we observed the longitudinal spatial hole burning above the lasing threshold.