微波功率InAlAs/InGaAs双异质结双极晶体管，1.5 v低压工作

1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI:10.1109/DRC.1995.496283

T. Iwai, H. Shigematsu, H. Yamada, T. Tomioka, S. Sasa, K. Joshin, T. Fujii

{"title":"微波功率InAlAs/InGaAs双异质结双极晶体管，1.5 v低压工作","authors":"T. Iwai, H. Shigematsu, H. Yamada, T. Tomioka, S. Sasa, K. Joshin, T. Fujii","doi":"10.1109/DRC.1995.496283","DOIUrl":null,"url":null,"abstract":"We report the first demonstration of microwave power performance at an extremely low operation voltage (1.5 V) using InAlAs/InGaAs double-heterojunction bipolar transistors (DHBTs). Fabricated InAlAs/InGaAs DHBTs have a step graded collector structure which suppresses the collector-emitter offset voltage V/sub CE,offset/ of I-V characteristics, enabling us to use power devices at a low operation voltage.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microwave power InAlAs/InGaAs double heterojunction bipolar transistors with 1.5 V-low voltage operation\",\"authors\":\"T. Iwai, H. Shigematsu, H. Yamada, T. Tomioka, S. Sasa, K. Joshin, T. Fujii\",\"doi\":\"10.1109/DRC.1995.496283\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the first demonstration of microwave power performance at an extremely low operation voltage (1.5 V) using InAlAs/InGaAs double-heterojunction bipolar transistors (DHBTs). Fabricated InAlAs/InGaAs DHBTs have a step graded collector structure which suppresses the collector-emitter offset voltage V/sub CE,offset/ of I-V characteristics, enabling us to use power devices at a low operation voltage.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496283\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496283","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报道了在极低工作电压(1.5 V)下使用InAlAs/InGaAs双异质结双极晶体管(dhbt)的微波功率性能的首次演示。制备的InAlAs/InGaAs dhbt具有阶跃梯度集电极结构，可以抑制集电极-发射极偏置电压V/sub CE，偏置/ I-V特性，使我们能够在低工作电压下使用功率器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Microwave power InAlAs/InGaAs double heterojunction bipolar transistors with 1.5 V-low voltage operation

We report the first demonstration of microwave power performance at an extremely low operation voltage (1.5 V) using InAlAs/InGaAs double-heterojunction bipolar transistors (DHBTs). Fabricated InAlAs/InGaAs DHBTs have a step graded collector structure which suppresses the collector-emitter offset voltage V/sub CE,offset/ of I-V characteristics, enabling us to use power devices at a low operation voltage.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1995 53rd Annual Device Research Conference Digest

自引率

0.00%

发文量