Demonstration of blue vertical-cavity surface-emitting laser diode

Abstract

We report on the first demonstration of an electrically-pumped blue VCSEL. Laser action was achieved at a wavelength of 484 nm under pulsed current injection at 77 K. The VCSEL structure was composed of a CdZnSe/ZnSe multi-quantum-well active layer, ZnSe cladding layers, and SiO/sub 2//TiO/sub 2/ distributed Bragg reflectors (DBRs). The CdZnSe/ZnSe epitaxial layers were grown by molecular beam epitaxy (MBE) directly on a GaAs (100) substrate at a growth temperature of 270/spl deg/C. The MQW structure consisted of Cd/sub 0.2/Zn/sub 0.8/Se quantum wells and ZnSe barriers.