2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics最新文献_第2页

Influence of defects on the leakage current properties in PbTiO3 and BiFeO3 single crystals 缺陷对PbTiO3和BiFeO3单晶漏电流特性的影响

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393273

Y. Noguchi, Y. Chishima, M. Tamada, M. Miyayama

{"title":"Influence of defects on the leakage current properties in PbTiO3 and BiFeO3 single crystals","authors":"Y. Noguchi, Y. Chishima, M. Tamada, M. Miyayama","doi":"10.1109/ISAF.2007.4393273","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393273","url":null,"abstract":"Single crystals of PbTiO3 (PT) and BiFeO3(BFO) were grown by a self-flux method, and the influence of lattice defects on the leakage current properties at 25degC was investigated. While PT crystals annealed in air at 700degC showed a leakage current density of the order of 10-5 A/cm2 , annealing under a high oxygen partial pressure of 35 MPa at 700degC increased the leakage current density to 10-4 A/cm2 . This increase in leakage current by the oxidation treatment provides direct evidence that electron hole plays a dominant carrier for the leakage current property in the PT system. The conductivity at 800degC of the PT crystals proportionally increased with an increase in oxygen partial pressure, and electron hole is revealed to be a detrimental carrier even at 800degC. Thermogravimetric analysis showed that a larger weight loss due to PbO vaporization was observed under a higher oxygen partial pressure at high temperatures above 1000degC. The enhanced vacancy formation of Pb under a higher oxygen partial pressure demonstrates that the surface reaction between Pb atoms and O atoms adsorbed onto the PT surface, which leads to PbO (g), is the limiting factor for the vacancy formation in the PT system. It is suggested that Pb vacancies act as an electron acceptor for generating electron holes, leading to a higher leakage current. It is found that the mechanism of the leakage curren for BFO cyrstals is almost the same as that for PT crystals.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114203774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improvement of Nondestructive Readout of Ferroelectric Gate FET Memory with an Intermediate Electrode by using New Data Writing and Reading Methods 采用新的数据写入和读取方法改进中间电极铁电门场效应晶体管存储器的无损读出

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393167

B. Trinh, S. Horita

{"title":"Improvement of Nondestructive Readout of Ferroelectric Gate FET Memory with an Intermediate Electrode by using New Data Writing and Reading Methods","authors":"B. Trinh, S. Horita","doi":"10.1109/ISAF.2007.4393167","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393167","url":null,"abstract":"The nondestructive readout characteristics of the ferroelectric gate field-effect transistor (F-FET) memory with an intermediate electrode for data writing (IF-FET) was investigated by using the conventional and the new writing and reading methods. Normally, for the conventional writing, we use two positive or negative square pulses to induce the positive (Pr+) or the negative (Pr-) remnant polarizations, respectively. For the conventional reading, unipolar square pulses were applied. Although the difference in output voltages between Pr+ and Pr- is large, the nondestructive readout characteristic for the Pr- is poor because the Pr- memory state is quickly degraded after each reading due to non-reswitched or nonreturned domains. Therefore, for the new writing, we proposed a new memory state, Pr0, instead of Pr-. The Pr0 was induced by a combined pulse with a positive part (Vw +) and a negative part (Vw -). For the new reading, a negative voltage (VR -) was applied, following a positive voltage (VR +) to recover the memory state to the initial one. By optimizing the Vw - and the VR - in the new method, the nondestructive readout is further improved, compared with the conventional method.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121479229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Ultrasonic attenuation in solutions of kaolin and samples from reservoir with various thermal conditions 不同热条件下高岭土溶液和储层样品的超声衰减

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393246

C. Sung, Y.J. Huang, J. Lai, G. Hwang

引用次数: 0

Structural and ferroelectric properties of BiFeO3-BiCoO3 solid solution films BiFeO3-BiCoO3固溶体薄膜的结构和铁电性能

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393288

H. Naganuma, N. Shimura, H. Shima, S. Yasui, K. Nishida, T. Iijima, H. Funakubo, S. Okamura

引用次数: 0

High-Density 8Mb 1T-1C Ferroelectric Random Access Memory Embedded Within a Low-Power 130nm Logic Process 低功耗130nm逻辑制程内的高密度8Mb 1T-1C铁电随机存取存储器

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393151

S. Summerfelt, T. Moise, K. Udayakumar, K. Boku, K. Remack, J. Rodriguez, J. Gertas, H. McAdams, S. Madan, J. Eliason, J. Groat, D. Kim, P. Staubs, M. Depner, R. Bailey

{"title":"High-Density 8Mb 1T-1C Ferroelectric Random Access Memory Embedded Within a Low-Power 130nm Logic Process","authors":"S. Summerfelt, T. Moise, K. Udayakumar, K. Boku, K. Remack, J. Rodriguez, J. Gertas, H. McAdams, S. Madan, J. Eliason, J. Groat, D. Kim, P. Staubs, M. Depner, R. Bailey","doi":"10.1109/ISAF.2007.4393151","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393151","url":null,"abstract":"Ferroelectric memories are the most promising alternative to traditional embedded nonvolatile memories, such as flash and EEPROMs, because of their fast read/write cycle time, non-volatile data retention, low voltage/low power operation and low number of additional masks for fabrication (+2). An embedded ferroelectric memory (FRAM) has been developed using a 1.5 V, 130 nm 5 metal layer Cu/FSG logic process. The only modification to the logic process was the addition of a ferroelectric process module consisting of two additional masks (FECAP, VIAO) immediately before MET1. The ferroelectric was 70 nm Pb(Zr,Ti)O3 (PZT) deposited by metalorganic chemical vapor deposition (MOCVD). The electrical properties of a 8 Mb 1T-1C embedded FRAM were characterized. This eFRAM process has been used to simultaneously fabricate a digital signal processor (DSP) using the eFRAM process flow and the operating frequency is nearly the same relative to the CMOS baseline. This eFRAM process flow creates a technology platform that enables ultra-low-power devices.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130191985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

Thickness Uniformity of Large Area PZT Films Formed by Aerosol Deposition 气溶胶沉积大面积PZT薄膜厚度均匀性研究

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393294

A. Iwata, J. Akedo

引用次数: 1

Thin Film Formations of Ferroelectric Material Bi3Nd1Ti3O12 (BNT), High-k Materials SrTiO3 (STO) and Nb-doped SrTiO3(Nb-STO) by Newly Developed MOCVD System 铁电材料Bi3Nd1Ti3O12 (BNT)、高k材料SrTiO3(STO)和掺铌SrTiO3(Nb-STO)的MOCVD薄膜制备

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393195

Masayuki Toda, Y. Sasaki, Y. Kurihashi, M. Umeda, M. Fukagawa, M. Tamura, Y. Kosugi, M. Kusuhara

引用次数: 1

Synthesis and Characterization of PZT Ferroelectric Nanocrystals Current Measurement PZT铁电纳米晶的合成与表征

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393244

K. Kubo, M. Echizen, T. Nishida, T. Takeda, K. Uchiyama, T. Shiosaki

引用次数: 0

Atomic Layer Deposition of Ru Thin Films Using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl) Ru by a Liquid Injection System 液体注射法制备2,4-(二甲基戊二烯基)(乙基环戊二烯基)Ru薄膜的原子层沉积

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393201

S. Kim, Sang Young Lee, Sang Woon Lee, C. Hwang

引用次数: 5

A New Detection Method for Sub-Harmonic Components Using a Double-Layered Piezoelectric Transducer 基于双层压电换能器的次谐波检测新方法

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI: 10.1109/ISAF.2007.4393401

M. Fukuda, M. Nishihira, K. Imano

引用次数: 0