液体注射法制备2,4-(二甲基戊二烯基)(乙基环戊二烯基)Ru薄膜的原子层沉积

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393201

S. Kim, Sang Young Lee, Sang Woon Lee, C. Hwang

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引用次数: 5

摘要

以2,4-(二甲基戊二烯基)(乙基环戊二烯基)Ru和O2分别作为Ru的前驱体和反应物，采用原子层沉积法在TiO2/Si和裸Si衬底上生长Ru薄膜。即使在过量的氧气剂量下，形成的RuO2也可以忽略不计。与裸Si衬底上的Ru膜相比，TiO2/Si衬底上的Ru膜表面形貌更光滑。当退火温度> 700℃时，钌薄膜出现异常晶粒生长，但未观察到团聚现象。在Ru膜上生长al - TiO2 (ATO)薄膜，并对电容器的电学性能进行了研究，以评价底部Ru膜的性能。等效氧化厚度为0.7 nm的ATO膜在+ 1 V时的漏电流密度为10-7 A/cm2。因此，ALD生长的Ru薄膜作为未来动态随机存取存储器的电容电极是非常有前景的。

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Atomic Layer Deposition of Ru Thin Films Using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl) Ru by a Liquid Injection System

Ru thin films were grown on TiO2/Si and bare-Si substrates by atomic-layer-deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and O2 as Ru precursor and reactant, respectively. Negligible RuO2 was formed even with an excessive oxygen dose. Ru films on TiO2/Si substrate showed smoother surface morphology compared to Ru films on bare-Si substrate. Although abnormal grain growth of Ru films appeared at annealing temperature > 700degC, agglomeration of Ru films was not observed. Al-incorporated TiO2 (ATO) films were grown on Ru films and the electrical properties of the capacitor were investigated in order to evaluate the properties of bottom Ru films. The leakage current density of an ATO film with an equivalent oxide thickness of 0.7 nm was 10-7 A/cm2 at + 1 V. Therefore, Ru films grown by ALD are very promising as the capacitor electrodes of future dynamic random access memories.

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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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