气溶胶沉积大面积PZT薄膜厚度均匀性研究

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393294

A. Iwata, J. Akedo

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引用次数: 1

摘要

基于室温冲击固结(RTIC)技术，采用气溶胶沉积法在4英寸硅片衬底上沉积PZT薄膜。喷射出气溶胶束的喷嘴扫描晶圆片。通过测量被遮挡边缘的阶跃高度来评估膜的厚度。气溶胶沉积膜的厚度均匀性较好，为1.4%。表面粗糙度为Ra 59 nm。

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Thickness Uniformity of Large Area PZT Films Formed by Aerosol Deposition

PZT films were deposited on 4 inch silicon wafer substrate by aerosol deposition, based on room temperature impact consolidation (RTIC). A nozzle that blowed out aerosol beam scanned the wafer. The film thickness was evaluated through the measurements with step height of masked edges. The aerosol deposited films showed relatively good uniformity of thickness of 1.4%. The surface roughness was Ra 59 nm.

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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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