铁电材料Bi3Nd1Ti3O12 (BNT)、高k材料SrTiO3(STO)和掺铌SrTiO3(Nb-STO)的MOCVD薄膜制备

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393195

Masayuki Toda, Y. Sasaki, Y. Kurihashi, M. Umeda, M. Fukagawa, M. Tamura, Y. Kosugi, M. Kusuhara

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引用次数: 1

摘要

针对FeRAM-LSI、DRAM-LSI等器件，开发了具有自主设计的汽化器和液源输送系统的MOCVD量产系统。本文研究了铁电材料Bi3Nd1Ti3O12 (BNT)、高钾材料SrTiO3(STO)和掺铌SrTiO3(Nb-STO)在MOCVD系统中的薄膜形成。

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Thin Film Formations of Ferroelectric Material Bi3Nd1Ti3O12 (BNT), High-k Materials SrTiO3 (STO) and Nb-doped SrTiO3(Nb-STO) by Newly Developed MOCVD System

The mass production system of MOCVD, which has the originally designed vaporizer and liquid source delivery system, has been developed for FeRAM-LSI, DRAM-LSI and so on. In this work, the thin film formations of ferroelectric materials Bi₃Nd₁Ti₃O₁₂ (BNT), high-k materials SrTiO₃ (STO) and Nb-doped SrTiO₃(Nb-STO) by newly developed MOCVD system were extensively examined.

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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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