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2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)最新文献

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Design and analysis of a first-order sigma-delta analog-to-digital converter for MEMS resistive sensor 用于MEMS电阻式传感器的一阶σ - δ模数转换器的设计与分析
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549366
M. Ya, A. Nordin, Sheroz Khan, A. Alam, M. R. Islam, A. Naji, K. Al-Khateeb
{"title":"Design and analysis of a first-order sigma-delta analog-to-digital converter for MEMS resistive sensor","authors":"M. Ya, A. Nordin, Sheroz Khan, A. Alam, M. R. Islam, A. Naji, K. Al-Khateeb","doi":"10.1109/SMELEC.2010.5549366","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549366","url":null,"abstract":"This paper details the design and analysis of a first-order sigma-delta analog-to-digital converter (Σ-Δ ADC) for the MEMS resistive sensors. The working principles of the MEMS resistive sensor and Σ-Δ ADC are outlined first. To verify the functionality of the first-order Σ-Δ modulator, MATLAB© is used to simulate its overall block diagram. Each block is then designed as a CMOS circuit using Cadence Silterra 0.13µm standard COMS process. Finally, the necessary properties (such as quantization error, resolution and signal to noise ratio) of this interface circuit for MEMS resistive sensors are analyzed. It is presented that when connected to MEMS resistive sensors, the usage of Σ-Δ ADC can greatly reduce the quantization error when compared to the conventional Nyquist rate analog to digital converter.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125956898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An analysis of silicon waveguide phase modulation efficiency based on carrier depletion effect 基于载流子耗尽效应的硅波导相位调制效率分析
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549519
H. Hazura, A. Hanim, B. Mardiana, P. Menon
{"title":"An analysis of silicon waveguide phase modulation efficiency based on carrier depletion effect","authors":"H. Hazura, A. Hanim, B. Mardiana, P. Menon","doi":"10.1109/SMELEC.2010.5549519","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549519","url":null,"abstract":"This paper highlights the study of carrier depletion effect on silicon waveguide with p-i-n diode and NPN structure. The device performance is predicted by using 2D Silvaco CAD software under different applied voltages. Device performances in terms of modulation efficiency will be discussed.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129018983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Micro-diaphragm performance analysis for polyimide diaphragm 聚酰亚胺膜片微膜片性能分析
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549367
K. Hasikin, N. Soin, F. Ibrahim
{"title":"Micro-diaphragm performance analysis for polyimide diaphragm","authors":"K. Hasikin, N. Soin, F. Ibrahim","doi":"10.1109/SMELEC.2010.5549367","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549367","url":null,"abstract":"This paper presents a micro-diaphragm performance analysis for optical sensor for human pulse pressure detection. The effect of diaphragm radius and diaphragm thickness on the static and frequency responses were investigated. It can be concluded that the polyimide micro-diaphragm with a radius of 90µm and thickness of 4µm has achieved the optimum performance in term of the sensitivity, flexural rigidity and resonance frequency.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132262855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on existence of CNT in nanocomposite CNT/MEH-PPV thin film CNT/MEH-PPV纳米复合薄膜中碳纳米管存在性的研究
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549572
M. Sarah, M. Musa, A. Suriani, N. Jumali, Z. Shaameri, A. S. Hamzah, M. Rusop
{"title":"Study on existence of CNT in nanocomposite CNT/MEH-PPV thin film","authors":"M. Sarah, M. Musa, A. Suriani, N. Jumali, Z. Shaameri, A. S. Hamzah, M. Rusop","doi":"10.1109/SMELEC.2010.5549572","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549572","url":null,"abstract":"Spin coating method is used to deposit nanocomposite CNT/MEH-PPV thin film on a glass substrate. The MEH-PPV which is in powder form was weighted and then dissolved into THF. Then, a certain amount of CNTs were added to the MEH-PPV solution. It is then stirred for 3 hours and sonicated for 1 hour to ensure that CNTs is well dispersed in the MEH-PPV solution. The addition of CNTs in the MEH-PPV solution yields a nanocomposite CNT/MEH-PPV solution. The characterization done was to evaluate the conductance as well as the absorption. The conductance and absorption of the nanocomposite showed an increment in value due to the existence of the CNTs.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"61 34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134024653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Localized surface plasmon resonance of gold nanoparticle-cytocrome C to detect the presence of nitric oxide gas 金纳米粒子的局部表面等离子体共振-细胞原体C检测一氧化氮气体的存在
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549565
Sri Nengsih, A. Umar, M. Salleh, M. Yahaya
{"title":"Localized surface plasmon resonance of gold nanoparticle-cytocrome C to detect the presence of nitric oxide gas","authors":"Sri Nengsih, A. Umar, M. Salleh, M. Yahaya","doi":"10.1109/SMELEC.2010.5549565","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549565","url":null,"abstract":"This paper reports the study of the localized surface plasmon resonance (LSPR) characteristic of the gold nanoparticle-cytochrome c hybrid thin film to detect the presence of nitric oxide (NO) gas. For the fabrications of gold nanoparticles ensemble on the surface, the seed mediated growth method was used. The cytochrome C (cyt c) thin film on gold nanoparticles was prepared using the spin coating technique. Detection of gas was based on the change in the LSPR of gold nanoparticle modified cytocrome C film upon exposure to the gas sample. It was found that the SPR peak of absorbance spectrum of gold nanoparticle-cyt c film was decreased when the NO gas flowed into the sensor chamber. The mechanism for detection of NO's gas will be discussed in this paper.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129696850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A fast method to analyze and characterize the graphene nanoribbon FET by non-equilibrium Green's function 利用非平衡格林函数快速分析表征石墨烯纳米带场效应管
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549561
H. Sarvari, R. Ghayour
{"title":"A fast method to analyze and characterize the graphene nanoribbon FET by non-equilibrium Green's function","authors":"H. Sarvari, R. Ghayour","doi":"10.1109/SMELEC.2010.5549561","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549561","url":null,"abstract":"In this paper, based on the simple Pz orbital model, the energy diagram of armchair and zigzag graphene nanoribbons (A-GNR & Z-GNR) are studied by considering the first and third nearest neighbors (FNN & TNN). Then, we applied the Non-Equilibrium Green Function method to calculate the conduction in A-GNR. Thereafter, we analyzed the single gated GNRFET in real space provided that under any Vgs the energy of all the atoms within the channel remains the same (qVgs) and consequently, solving Poisson's equation is not needed anymore. The numerical calculation of the self-energy matrices is done based on two approaches, where the same result is obtained but different CPU times consumed. Therefore, one of the advantages of our approach is considerably lower consuming time of calculation. The number of atoms across the width of the channel nanoribbon is chosen so that the channel behaves as a semiconductor. However, for the reservoirs (source and drain) the number of atoms within their widths makes them metallic ribbons. The results of applying TNN in comparison with those of FNN show that TNN is more accurate and reliable. Finally, we can conclude that in A-GNRFET tunneling component of the current from reservoir to the channel is significant.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116757895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Semiconductor fabrication eco-systems and supply chain in Malaysia 马来西亚的半导体制造生态系统和供应链
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549504
K. Zain
{"title":"Semiconductor fabrication eco-systems and supply chain in Malaysia","authors":"K. Zain","doi":"10.1109/SMELEC.2010.5549504","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549504","url":null,"abstract":"The electronic industry is the leading sector in Malaysia's manufacturing sector, contributing significantly to the country's manufacturing output 29.3%, export 55.9% and employment of 28.8%. In 70's Malaysia is well known for the backend manufacturing. In 2000 Malaysia established it's semiconductor fabrication facilities to fill in one of the major gaps in supply chain that generates RM0.5Billion/year from a single facility. This significant source of revenue gives major impact to the overall semiconductor eco-system and local economy. Semiconductor fabrication requires huge equipment investment using various types of chemicals, gasses, materials, software systems, automation, jigs and fixtures, consumables and parts in clean room environment. The process to fabricate a chip on wafer will take thirty to one hundred days depending on the complexity of the design. This demands a very highly skilled workforce to operate the processes, equipments, manufacturing and facilities. Semiconductor fabrication facility has a very deep anchor to the value chain surrounding economy and will be discussed in detail the presentation.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121665048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide 基于载流子色散效应的硅肋波导p-i-n二极管相位调制工作模式
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549510
B. Mardiana, H. Hazura, A. Hanim, P. Menon, H. Abdullah
{"title":"Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide","authors":"B. Mardiana, H. Hazura, A. Hanim, P. Menon, H. Abdullah","doi":"10.1109/SMELEC.2010.5549510","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549510","url":null,"abstract":"This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. Summarily, the phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114666049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lower delay and area efficient non-restoring array divider by using Shannon based adder technique 基于香农加法器技术的低时延、高效率的非恢复阵列分法器
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549382
C. Senthilpari, S. Kavitha, Jude Joseph
{"title":"Lower delay and area efficient non-restoring array divider by using Shannon based adder technique","authors":"C. Senthilpari, S. Kavitha, Jude Joseph","doi":"10.1109/SMELEC.2010.5549382","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549382","url":null,"abstract":"This paper is mainly focused on designs of full-adder using by Shannon theorem based on pass transistor approach. The proposed Shannon theorem adder, SERF, CMOS 10T and mirror adder circuits are implemented in non-restoring array divider circuit. The divider circuits is schematized by using DSCH2 CAD tools and their layouts are simulated by using Microwind 3 VLSI layout CAD tool. The parameter analyses are analyzed by using BSIM 4 analyzer. The analysis includes power dissipation, propagation delay, chip area, power delay product (PDP), Energy Per Instruction (EPI), latency and throughput. These analyses are compared with reported author results, which shows better improvement in terms of low power, lower area, lower propagation delay and high throughput.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124264843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Ionization-based gas sensor using aligned MWCNTs array 基于电离的MWCNTs阵列气体传感器
2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549361
A. R. Kermany, N. M. Mohamed, B. Singh
{"title":"Ionization-based gas sensor using aligned MWCNTs array","authors":"A. R. Kermany, N. M. Mohamed, B. Singh","doi":"10.1109/SMELEC.2010.5549361","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549361","url":null,"abstract":"Current gas sensors are mainly categorized into two modes of operation; chemical type operating by gas adsorption and physical type using ionization method. Chemical type conductivity-based gas detectors are large in size, they operate at high temperatures, and their response time is slow. Moreover most of them are only capable of detecting single type gases due to their low selectivity. Physical type ionization-based sensors have better selectivity and response time, but they are still huge and bulky. Both chemical and physical type gas detectors are using semiconductor materials as their sensing elements. With the discovery of nanomaterials, different types of sensing elements have been investigated to produce gas sensors which are smaller in size, one of which is carbon nanotubes (CNTs). Development of high performance sensor is now focused towards CNT-based sensors because of their inherent properties such as small size, large surface area and high electrical conductivity. CNTs based sensors are smaller in size; they have lower power consumption, higher sensitivity and better selectivity compared to existing semiconducting gas sensors. CNT-based gas sensors operate in room temperature which will result in safer environment. The work investigates the structural and electrical characterization of carbon nanotubes array for suitability as an effective sensing element in the ionization-based gas sensor.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130982458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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