An analysis of silicon waveguide phase modulation efficiency based on carrier depletion effect

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI:10.1109/SMELEC.2010.5549519

H. Hazura, A. Hanim, B. Mardiana, P. Menon

引用次数: 16

Abstract

This paper highlights the study of carrier depletion effect on silicon waveguide with p-i-n diode and NPN structure. The device performance is predicted by using 2D Silvaco CAD software under different applied voltages. Device performances in terms of modulation efficiency will be discussed.

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基于载流子耗尽效应的硅波导相位调制效率分析

本文重点研究了p-i-n二极管和NPN结构硅波导的载流子损耗效应。利用二维Silvaco CAD软件对器件在不同外加电压下的性能进行了预测。从调制效率的角度来讨论器件性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)

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