基于载流子色散效应的硅肋波导p-i-n二极管相位调制工作模式

B. Mardiana, H. Hazura, A. Hanim, P. Menon, H. Abdullah
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摘要

本文重点研究了相位调制器的载流子注入模式和载流子耗尽模式。采用p-i-n二极管结构将相位调制器集成在硅肋波导中。利用二维半导体封装软件SILVACO (CAD)对直流工况下的电气器件性能进行了预测。综上所述,相位调制器在反向偏置或耗尽模式下工作时,对有效折射率变化的灵敏度低于正向偏置或注入模式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide
This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. Summarily, the phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode.
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