2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)最新文献_第8页

A fast method to analyze and characterize the graphene nanoribbon FET by non-equilibrium Green's function 利用非平衡格林函数快速分析表征石墨烯纳米带场效应管

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549561

H. Sarvari, R. Ghayour

{"title":"A fast method to analyze and characterize the graphene nanoribbon FET by non-equilibrium Green's function","authors":"H. Sarvari, R. Ghayour","doi":"10.1109/SMELEC.2010.5549561","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549561","url":null,"abstract":"In this paper, based on the simple Pz orbital model, the energy diagram of armchair and zigzag graphene nanoribbons (A-GNR & Z-GNR) are studied by considering the first and third nearest neighbors (FNN & TNN). Then, we applied the Non-Equilibrium Green Function method to calculate the conduction in A-GNR. Thereafter, we analyzed the single gated GNRFET in real space provided that under any Vgs the energy of all the atoms within the channel remains the same (qVgs) and consequently, solving Poisson's equation is not needed anymore. The numerical calculation of the self-energy matrices is done based on two approaches, where the same result is obtained but different CPU times consumed. Therefore, one of the advantages of our approach is considerably lower consuming time of calculation. The number of atoms across the width of the channel nanoribbon is chosen so that the channel behaves as a semiconductor. However, for the reservoirs (source and drain) the number of atoms within their widths makes them metallic ribbons. The results of applying TNN in comparison with those of FNN show that TNN is more accurate and reliable. Finally, we can conclude that in A-GNRFET tunneling component of the current from reservoir to the channel is significant.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116757895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Ionization-based gas sensor using aligned MWCNTs array 基于电离的MWCNTs阵列气体传感器

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549361

A. R. Kermany, N. M. Mohamed, B. Singh

{"title":"Ionization-based gas sensor using aligned MWCNTs array","authors":"A. R. Kermany, N. M. Mohamed, B. Singh","doi":"10.1109/SMELEC.2010.5549361","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549361","url":null,"abstract":"Current gas sensors are mainly categorized into two modes of operation; chemical type operating by gas adsorption and physical type using ionization method. Chemical type conductivity-based gas detectors are large in size, they operate at high temperatures, and their response time is slow. Moreover most of them are only capable of detecting single type gases due to their low selectivity. Physical type ionization-based sensors have better selectivity and response time, but they are still huge and bulky. Both chemical and physical type gas detectors are using semiconductor materials as their sensing elements. With the discovery of nanomaterials, different types of sensing elements have been investigated to produce gas sensors which are smaller in size, one of which is carbon nanotubes (CNTs). Development of high performance sensor is now focused towards CNT-based sensors because of their inherent properties such as small size, large surface area and high electrical conductivity. CNTs based sensors are smaller in size; they have lower power consumption, higher sensitivity and better selectivity compared to existing semiconducting gas sensors. CNT-based gas sensors operate in room temperature which will result in safer environment. The work investigates the structural and electrical characterization of carbon nanotubes array for suitability as an effective sensing element in the ionization-based gas sensor.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130982458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Effect of oxide thickness on 32nm Pmosfet reliability 氧化物厚度对32nm Pmosfet可靠性的影响

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549578

D. A. Hadi, S. Hatta, N. Soin

引用次数: 3

Development of nanocrystalline laser ablated thick film array gas sensor 纳米晶激光烧蚀厚膜阵列气体传感器的研制

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549421

M. Abadi, M. Hamidon, A. Shaari, N. Abdullah, R. Wagiran, N. Misron

引用次数: 1

Wave propagation based analytical delay and cross talk noise model for distributed on-chip RLCG interconnects 基于波传播的分布式片上RLCG互连分析时延和串扰噪声模型

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549381

A. Choudhary, V. Maheshwari, Abhishek Singh, R. Kar

引用次数: 3

Ubiquitous sensor technologies: The way moving forward 无处不在的传感器技术:前进的道路

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549500

M. Othman

{"title":"Ubiquitous sensor technologies: The way moving forward","authors":"M. Othman","doi":"10.1109/SMELEC.2010.5549500","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549500","url":null,"abstract":"This presentation provides strategic direction for ubiquitous sensor networks and how we can benefit from the technology for the betterment of our lifes. An overview of the global progress is presented and the values of the technology in terms of the realization of WSN implementation in many vertical applications such as in the agriculture, medical, transportation and environment will be given. Some statements of benefits of the technology especially in the areas of medical for human and plants and environmental will be verbalised. Then followed by some case studies especially in the sensor technologies for chemical and bio-sensors will be presented. Issues in the realization both in terms of ethical and technological challenges in bio-medical sensors will be highlighted. MIMOS has been actively pursuing the R&D in bio-chemical sensors especially for the application in the field of agriculture. The multipurpose nature of the design can easily be modified to suit for many other applications in the future. In particular an integrated sensors for monitoring soil and environment (N, P, K, pH, T, Moisture and humidity sensors) has been produced and has been deployed at the POC level in several plantations industries. The R&D findings related to the sensors will be shared during the presentation. Last but not least a systemic approach in conducting and realizing gas sensors for environment will be given. The process established is very important to ensure the deliverables of the sensor systems meeting industrial requirements. A conclusion will be presented at the end of the presentation.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114171295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correlation study between doping technique towards diffusion rate and oxidation rate 掺杂技术与扩散速率和氧化速率的相关性研究

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549541

A. Zoolfakar, H. Zulkefle, A. Zakaria, A. Manut, Abdul Aziz A, M. Zolkapli

引用次数: 0

Amorphous silicon thin-film transistor gate driver circuit design optimization using a simulation-based evolutionary technique 基于模拟进化技术的非晶硅薄膜晶体管栅极驱动电路设计优化

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549386

Ying-Ju Chiu, Kuo-Fu Lee, Ying-Chieh Chen, Hui-Wen Cheng, Yiming Li, Tony Chiang, Kuen-Yu Huang, T. Hsieh

引用次数: 0

Optimization of pull-in voltage and contact force for MEMS series switch using Taguchi method 用田口法优化MEMS串联开关的拉入电压和接触力

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549363

Abhijeet Kshirsagar, P. Apte, S. Duttagupta, S. Gangal

{"title":"Optimization of pull-in voltage and contact force for MEMS series switch using Taguchi method","authors":"Abhijeet Kshirsagar, P. Apte, S. Duttagupta, S. Gangal","doi":"10.1109/SMELEC.2010.5549363","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549363","url":null,"abstract":"Cantilever based metal-to-metal contact type MEMS series switch has many applications namely in RFMEMS, Power MEMS etc. A typical MEMS switch consists of a cantilever as actuating element to make the contact between the two metal terminals of the switch. In electrostatic type switches the cantilever is pulled down by applying a pull-in voltage to the control electrode that is located below the middle portion of the cantilever while only the tip portion of the cantilever makes contact between the two terminals. Detailed analysis of bending of the cantilever for different pull-in voltages reveals some interesting facts. At low pull-in voltage the cantilever tip barely touches the two terminals, thus resulting in very less contact area. To increase contact area a very high pull-in voltage is applied. However it lifts the tip from the free end due to concave curving of the cantilever in the middle region of the cantilever where the electrode is located. It again results in less contact area. Furthermore, the high pull-in voltage produces large stress at the base of the cantilever close to the anchor. Therefore, an optimum, pull-in voltage must exist at which the concave curving is eliminated and contact area is maximum. In this paper authors report the procedure for finding a optimum voltage that can give maximum contact force across the two terminals. Taguchi method which is well suited to solve such optimization problem is used in the present work. The switch parameters, like cantilever length, cantilever width, electrode position, thickness of the metal of two terminals, are taken as 'control factors' with 4 levels each and simulation is performed for various combinations of the control factors as these appear in the rows of the L16 orthogonal array. The paper reports the optimum design of the MEMS switch.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129510103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Two-order low-power sigma-delta modulator with SC techniques 基于SC技术的二阶低功耗σ - δ调制器

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549418

Zhang Lei, Zhao Xian-li, Wang Xing-hua, Qu Ruo-yuan

引用次数: 4