2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)最新文献_第9页

Low cost procedure for fabrication of micro-nozzles and micro-diffusers 制造微喷嘴和微扩散器的低成本方法

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549372

A. Bahadorimehr, J. Yunas, B. Majlis

{"title":"Low cost procedure for fabrication of micro-nozzles and micro-diffusers","authors":"A. Bahadorimehr, J. Yunas, B. Majlis","doi":"10.1109/SMELEC.2010.5549372","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549372","url":null,"abstract":"In this paper, we present a simple, rapid, and low-cost procedure for fabricating micro-nozzles and micro-diffusers using in microfluidic devices to control the flow of the fluid which pass through the microchannels. This procedure uses commercially accessible and typical materials, which is used in several applications in microelectronic labs. Glass is used as main substrate to get advantages of photo transparent specifications of this material. In this method a thick layer of positive photoresist on the glass substrate for fabrication of lens is utilized. A mild BOE solution with additional HCL is employed to achieve an excellent etching quality and a smoother etched surface. The depth of the surface can be reach to 100µm without PR damage effect after 1 hour of etching process. The aluminum evaporation process produces a thin layer of aluminum across the substrate which makes it as a block against passing the light. Dispensing SU-8 on Al layer and using UV back-exposure technique the tapered structured is fabricated as a mold for PDMS which can be used in different microfluidic applications. The simulation results shows that the focal length up to 800µm with the lens curvature of 150µm is achievable.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125635431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A cost effective method to analyze wafer edge structure in high volume manufacturing for 200mm wafer fabs 一种具有成本效益的200mm晶圆厂大批量生产晶圆边缘结构分析方法

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549538

H. Ahmataku, K. Kipli

引用次数: 0

IDD scan test method for fault localization technique on CMOS VLSI failure analysis IDD扫描测试方法的故障定位技术对CMOS VLSI的失效分析

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549409

F. Abdullah, N. Nayan, M. M. Jamil, Norfauzi Kamsin

引用次数: 4

A 5-GHZ VCO for WLAN applications 用于WLAN应用的5 ghz VCO

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549380

M. Bayat, H. Shamsi, M. Fouladian, Morteza Rahimi

引用次数: 0

Nanostructures of III-V semiconductor for photonic, electronic, and sensing applications back to basics 光子，电子和传感应用的III-V半导体纳米结构回归基础

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549501

M. Hashim

{"title":"Nanostructures of III-V semiconductor for photonic, electronic, and sensing applications back to basics","authors":"M. Hashim","doi":"10.1109/SMELEC.2010.5549501","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549501","url":null,"abstract":"With the advancement of technology, the semiconductor materials are fabricated with ever shrinking size in order to reduce space and weight while at the same time benefiting from the improved performance such as high speed and low operating power. Recently found phenomena called, quantum confinement (QC) effects related to semiconductor material reaching the size in nanometer scale, only added to the excitement among researchers in this field around the world. Among notable effects of QC in nano-sized semiconductor is the enlargement of the bandgap due to the folding of the Brillouin zone. A few notable techniques that have been developed along this line are Metal Oxide Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), and Liquid Phase Chemical Vapor Deposition to name but a few. However these machines are very expensive to operate especially for large scale production. This obstacle has prompted researchers to find other alternatives for cheaper production cost but trying to maintain the quality of the grown nanostructures for high performance devices. Those techniques are the ones which had been used before the QC effects are found. In this talk we are revisiting one of the low cost conventional techniques to grow high quality III-V nanostructure on Si substrate, that is electrochemical etching and deposition. This technique relies on the type of electrolyte, electrical current, temperature, time and ambient light. The quality of the grown layers is studied using SEM, PL, Raman and XRD Spectroscopy. The potential application of the grown layers in light emission, light detection, and gas sensing is also discussed.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122484402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Effect of annealing treatment on the performance of organic solar cell 退火处理对有机太阳能电池性能的影响

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549471

T. Aziz, M. Salleh, M. Yahaya, K. Triyana, K. Fujita

引用次数: 1

Large-signal modeling of AlGaN/GaN HEMTs based on DC IV and S-parameter measurements 基于DC - IV和s参数测量的AlGaN/GaN hemt大信号建模

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549480

A. Jarndal, Pouya Aflaki, F. Ghannouchi

引用次数: 3

Development of nanocrystalline laser ablated thick film array gas sensor 纳米晶激光烧蚀厚膜阵列气体传感器的研制

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549421

M. Abadi, M. Hamidon, A. Shaari, N. Abdullah, R. Wagiran, N. Misron

引用次数: 1

Feasibility study of integrated vertical and lateral IMOS and TFET devices for nano-scale transistors 纳米级晶体管纵向和横向集成IMOS和TFET器件的可行性研究

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549575

P. Divya, I. Saad

引用次数: 6

Growth of AlxGa1−xN epitaxial thin film on sapphire substrate by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) 等离子体辅助金属有机化学气相沉积(PA-MOCVD)在蓝宝石衬底上生长AlxGa1−xN外延薄膜

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549448

F. Arsyad, P. Arifin, M. Barmawi, M. Budiman, S. Sukirno, A. Supu

引用次数: 0