Feasibility study of integrated vertical and lateral IMOS and TFET devices for nano-scale transistors

Abstract

A review on the integration of vertical impact ionization MOSFET (IMOS) with vertical tunnelling FET (TFET) has been presented in this paper. A comparison has been done on the lateral and vertical I-MOS and TFET device structures, highlighting the advantages and drawbacks of each device. Integration of I-MOS and TFET on a vertical scale is seen as one of the promising solutions, to continue the trend of scaling down the devices further, in the nanometer regime.