基于DC - IV和s参数测量的AlGaN/GaN hemt大信号建模

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI:10.1109/SMELEC.2010.5549480

A. Jarndal, Pouya Aflaki, F. Ghannouchi

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引用次数: 3

摘要

本文提出了一种用于射频功率放大器设计的GaN HEMT晶体管大信号模型。该模型在CAD软件中相对容易构建和实现，因为它只需要直流和s参数测量。将建模过程应用于4w封装的GaN-on-Si HEMT，并通过将其在不同操作类别下的大信号模拟与测量数据进行比较，验证了所开发的模型。

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Large-signal modeling of AlGaN/GaN HEMTs based on DC IV and S-parameter measurements

In this paper, a large-signal model for GaN HEMT transistors for designing RF power amplifiers is presented. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure is applied to a 4-W packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation to measured data under different classes of operation.

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来源期刊

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)

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