SPIE Commercial + Scientific Sensing and Imaging最新文献_第8页

Broadband antireflection with curved surface nano-pyramids for image sensing devices 用于图像传感器件的曲面纳米金字塔宽带抗反射

SPIE Commercial + Scientific Sensing and Imaging Pub Date : 2016-05-26 DOI: 10.1117/12.2230287

A. Shrestha, Genki Mizuno, Patrick Oduor, A. Dutta, N. Dhar

{"title":"Broadband antireflection with curved surface nano-pyramids for image sensing devices","authors":"A. Shrestha, Genki Mizuno, Patrick Oduor, A. Dutta, N. Dhar","doi":"10.1117/12.2230287","DOIUrl":"https://doi.org/10.1117/12.2230287","url":null,"abstract":"The reflection loss in imaging devices is one of the major drawbacks, which degrades efficiency resulting in lower responsivity. Since the reflected light is no longer available for conversion into electrons, it is very important to reduce the reflection from the top surface of the device as much as possible. Quarter wavelength and two index antireflection (AR) coatings have been developed to reduce reflection; however, these AR coatings are wavelength dependent and have not performed effectively in a broadband range. Attempts to make AR coating for broadband wavelengths by stacking multiple index AR layers result in thicker and expensive solutions, which still do not provide proper antireflection at all desired wavelengths. Moreover, the usage of AR coatings escalates material and fabrication costs of the device. We propose a novel nanostructure, which matches the refractive index of the device to that of free space to reduce reflection from the top surface, eliminating the use of AR coatings and hence reducing the device cost. It is shown via simulation that the proposed nanostructure effectively eliminates the reflection loss over the broadband spectrum of desired wavelengths e.g. Visible, Mid-wave IR (MWIR), Short-wave IR (SWIR) spectrums, opening various application opportunities.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130707980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Characterization of a new fertilizer during field trials by hyperspectral imaging 一种新型肥料在田间试验中的高光谱成像表征

SPIE Commercial + Scientific Sensing and Imaging Pub Date : 2016-05-26 DOI: 10.1117/12.2223006

G. Bonifazi, S. Serranti, A. Trella, C. Garcia Izquierdo

{"title":"Characterization of a new fertilizer during field trials by hyperspectral imaging","authors":"G. Bonifazi, S. Serranti, A. Trella, C. Garcia Izquierdo","doi":"10.1117/12.2223006","DOIUrl":"https://doi.org/10.1117/12.2223006","url":null,"abstract":"This work was carried out in the framework of the LIFE RESAFE Project (LIFE12 ENV/IT/000356) “Innovative fertilizer from urban waste, bio-char and farm residues as substitute of chemical fertilizers”. The aim of RESAFE project is the production of a new fertilizer from waste for agricultural practices. The new fertilizer was tested on 5 different crops during field trials carried out in Spain: barley, corn, tomato, potato and melon. For each crop six different treatments were applied and compared to verify the quality of RESAFE fertilizer. Soil samples were collected at the beginning and at the end of the experiment. The possibility to apply hyperspectral imaging (HSI) to perform soil evolution monitoring and characterization in respect to the fertilizer utilization and quality of the resulting crops was investigated. Soil samples were acquired by HSI in the near infrared field (1000–1700 nm) and on the same samples classical chemical analyses were carried out with reference to total nitrogen, total organic carbon, C/N ratio, total organic matter. Hyperspectral data were analyzed adopting a chemometric approach through application of Principal Component Analysis (PCA) for exploratory purposes and Partial Least Squares Analysis (PLS) for estimation of chemical parameters. The results showed as the proposed hardware and software integrated architecture allows to implement low cost and easy to use analytical procedures able to quantitatively assess soil chemical-physical attributes according to different fertilization strategies, in respect of different environmental conditions and selected crops.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129031276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strategic options towards an affordable high-performance infrared camera 战略选择对一个负担得起的高性能红外相机

SPIE Commercial + Scientific Sensing and Imaging Pub Date : 2016-05-26 DOI: 10.1117/12.2230307

Patrick Oduor, Genki Mizuno, A. Dutta, Jay S. Lewis, N. Dhar

{"title":"Strategic options towards an affordable high-performance infrared camera","authors":"Patrick Oduor, Genki Mizuno, A. Dutta, Jay S. Lewis, N. Dhar","doi":"10.1117/12.2230307","DOIUrl":"https://doi.org/10.1117/12.2230307","url":null,"abstract":"The promise of infrared (IR) imaging attaining low-cost akin to CMOS sensors success has been hampered by the inability to achieve cost advantages that are necessary for crossover from military and industrial applications into the consumer and mass-scale commercial realm despite well documented advantages. Banpil Photonics is developing affordable IR cameras by adopting new strategies to speed-up the decline of the IR camera cost curve. We present a new short-wave IR (SWIR) camera; 640x512 pixel InGaAs uncooled system that is high sensitivity low noise (<50e-), high dynamic range (100 dB), high-frame rates (> 500 frames per second (FPS)) at full resolution, and low power consumption (< 1 W) in a compact system. This camera paves the way towards mass market adoption by not only demonstrating high-performance IR imaging capability value add demanded by military and industrial application, but also illuminates a path towards justifiable price points essential for consumer facing application industries such as automotive, medical, and security imaging adoption. Among the strategic options presented include new sensor manufacturing technologies that scale favorably towards automation, multi-focal plane array compatible readout electronics, and dense or ultra-small pixel pitch devices.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127876308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation 二进制CMOS图像传感器，具有门/体束缚mosfet型光电探测器，用于高速运行

SPIE Commercial + Scientific Sensing and Imaging Pub Date : 2016-05-26 DOI: 10.1117/12.2229557

Byoung-Soo Choi, S. Jo, M. Bae, Sang-Hwan Kim, Jang-Kyoo Shin

{"title":"Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation","authors":"Byoung-Soo Choi, S. Jo, M. Bae, Sang-Hwan Kim, Jang-Kyoo Shin","doi":"10.1117/12.2229557","DOIUrl":"https://doi.org/10.1117/12.2229557","url":null,"abstract":"In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127786439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Infrared optical and electronic properties in low tellurium doped GaSb substrates for SLS FPA applications 用于SLS FPA的低碲掺杂GaSb衬底的红外光学和电子特性

SPIE Commercial + Scientific Sensing and Imaging Pub Date : 2016-05-26 DOI: 10.1117/12.2234694

K. Roodenko, P. Liao, D. Lan, K. Clark, E. Fraser, K. Vargason, J. Kuo, Y. Kao, P. Pinsukanjana

{"title":"Infrared optical and electronic properties in low tellurium doped GaSb substrates for SLS FPA applications","authors":"K. Roodenko, P. Liao, D. Lan, K. Clark, E. Fraser, K. Vargason, J. Kuo, Y. Kao, P. Pinsukanjana","doi":"10.1117/12.2234694","DOIUrl":"https://doi.org/10.1117/12.2234694","url":null,"abstract":"Epi-ready GaSb wafers with low absorption coefficients are of a special interest as substrates for molecular beam epitaxy (MBE) growth of material for IR focal plane arrays that operate under back-side illumination configuration, when the substrate is not completely removed. While low absorption coefficient across a broad IR spectral range (~2um-20um) is achievable in GaSb crystals with low Te doping, the control of the doping distribution across the wafers is especially challenging in the mass-production of optically transparent, high-resistivity Te-doped GaSb wafers. In this work, we examine data from the n-type and p-type Te-doped GaSb samples with doping concentration below 1e18 cm-3. The carrier concentration measured by the Hall and the transmission data measured by FTIR spectroscopy are correlated. We perform a rigorous analysis of the absorption coefficient based on the free-carrier absorption mechanism that is dominant for the n-type GaSb and the inter-valence band absorption due to the transitions from the light-hole to the heavy-hole band that is the dominant absorption mechanism for the p-type GaSb. Based on the correlation between the Hall and the FTIR data, carrier concentration profile can be estimated from the non-destructive FTIR transmission mapping of the wafer.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133513952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Modeling of terahertz images based on x-ray images: a novel approach for verification of terahertz images and identification of objects with fine details beyond terahertz resolution 基于x射线图像的太赫兹图像建模:一种验证太赫兹图像和识别具有超太赫兹分辨率细节的物体的新方法

SPIE Commercial + Scientific Sensing and Imaging Pub Date : 2016-05-26 DOI: 10.1117/12.2228685

Kiarash Ahi, M. Anwar

引用次数: 26

High performance digital read out integrated circuit (DROIC) for infrared imaging 高性能数字读出集成电路(DROIC)用于红外成像

SPIE Commercial + Scientific Sensing and Imaging Pub Date : 2016-05-26 DOI: 10.1117/12.2230573

Genki Mizuno, R. Oláh, Patrick Oduor, A. Dutta, N. Dhar

{"title":"High performance digital read out integrated circuit (DROIC) for infrared imaging","authors":"Genki Mizuno, R. Oláh, Patrick Oduor, A. Dutta, N. Dhar","doi":"10.1117/12.2230573","DOIUrl":"https://doi.org/10.1117/12.2230573","url":null,"abstract":"Banpil Photonics has developed a high-performance Digital Read-Out Integrated Circuit (DROIC) for image sensors and camera systems targeting various military, industrial and commercial Infrared (IR) imaging applications. The on-chip digitization of the pixel output eliminates the necessity for an external analog-to-digital converter (ADC), which not only cuts costs, but also enables miniaturization of packaging to achieve SWaP-C camera systems. In addition, the DROIC offers new opportunities for greater on-chip processing intelligence that are not possible in conventional analog ROICs prevalent today. Conventional ROICs, which typically can enhance only one high performance attribute such as frame rate, power consumption or noise level, fail when simultaneously targeting the most aggressive performance requirements demanded in imaging applications today. Additionally, scaling analog readout circuits to meet such requirements leads to expensive, high-power consumption with large and complex systems that are untenable in the trend towards SWaP-C. We present the implementation of a VGA format (640x512 pixels 15μm pitch) capacitivetransimpedance amplifier (CTIA) DROIC architecture that incorporates a 12-bit ADC at the pixel level. The CTIA pixel input circuitry has two gain modes with programmable full-well capacity values of 100K e- and 500K e-. The DROIC has been developed with a system-on-chip architecture in mind, where all the timing and biasing are generated internally without requiring any critical external inputs. The chip is configurable with many parameters programmable through a serial programmable interface (SPI). It features a global shutter, low power, and high frame rates programmable from 30 up 500 frames per second in full VGA format supported through 24 LVDS outputs. This DROIC, suitable for hybridization with focal plane arrays (FPA) is ideal for high-performance uncooled camera applications ranging from near IR (NIR) and shortwave IR (SWIR) to mid-wave IR (MWIR) and long-wave IR (LWIR) spectral bands.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130724935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Alignment issues, correlation techniques and their assessment for a visible light imaging-based 3D printer quality control system 基于可见光成像的3D打印机质量控制系统的校准问题、相关技术及其评估

SPIE Commercial + Scientific Sensing and Imaging Pub Date : 2016-05-26 DOI: 10.1117/12.2228081

J. Straub

引用次数: 4

Analysis and implementation of the foveated vision of the raptor eye 迅猛龙眼睛注视点视觉的分析与实现

SPIE Commercial + Scientific Sensing and Imaging Pub Date : 2016-05-26 DOI: 10.1117/12.2224127

A. Long, R. Narayanan, T. Kane, Terence F. Rice, M. Tauber

引用次数: 4

Lithographic VCSEL array multimode and single mode sources for sensing and 3D imaging 光刻VCSEL阵列多模和单模源传感和三维成像

SPIE Commercial + Scientific Sensing and Imaging Pub Date : 2016-05-26 DOI: 10.1117/12.2222911

J. Leshin, M. Li, J. Beadsworth, X. Yang, Y. Zhang, F. Tucker, L. Eifert, D. Deppe

{"title":"Lithographic VCSEL array multimode and single mode sources for sensing and 3D imaging","authors":"J. Leshin, M. Li, J. Beadsworth, X. Yang, Y. Zhang, F. Tucker, L. Eifert, D. Deppe","doi":"10.1117/12.2222911","DOIUrl":"https://doi.org/10.1117/12.2222911","url":null,"abstract":"Sensing applications along with free space data links can benefit from advanced laser sources that produce novel radiation patterns and tight spectral control for optical filtering. Vertical-cavity surface-emitting lasers (VCSELs) are being developed for these applications. While oxide VCSELs are being produced by most companies, a new type of oxide-free VCSEL is demonstrating many advantages in beam pattern, spectral control, and reliability. These lithographic VCSELs offer increased power density from a given aperture size, and enable dense integration of high efficiency and single mode elements that improve beam pattern. In this paper we present results for lithographic VCSELs and describes integration into military systems for very low cost pulsed applications, as well as continuouswave applications in novel sensing applications. The VCSELs are being developed for U.S. Army for soldier weapon engagement simulation training to improve beam pattern and spectral control. Wavelengths in the 904 nm to 990 nm ranges are being developed with the spectral control designed to eliminate unwanted water absorption bands from the data links. Multiple beams and radiation patterns based on highly compact packages are being investigated for improved target sensing and transmission fidelity in free space data links. These novel features based on the new VCSEL sources are also expected to find applications in 3-D imaging, proximity sensing and motion control, as well as single mode sensors such as atomic clocks and high speed data transmission.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134491071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2