G. Pethuraja, R. Welser, A. Sood, H. Efstathiadis, P. Haldar, P. Wijewarnasuriya, N. Dhar
{"title":"Development of nanostructured antireflection coatings for EO/IR sensor applications","authors":"G. Pethuraja, R. Welser, A. Sood, H. Efstathiadis, P. Haldar, P. Wijewarnasuriya, N. Dhar","doi":"10.1117/12.2229647","DOIUrl":"https://doi.org/10.1117/12.2229647","url":null,"abstract":"Electro-optical/infrared (EO/IR) nanosensors are being developed for a variety of defense and commercial systems applications. One of the critical technologies that will enhance EO/IR sensor performance is the development of advanced antireflection coatings. In this paper, we review our latest work on high quality nanostructure-based antireflection structures, including recent efforts to deposit nanostructured antireflection coatings on IR substrates. Nanostructured antireflection coatings fabricated via oblique angle deposition are shown to enhance the optical transmission through transparent windows by minimizing reflection losses at the spectral band of interest to less than one percent, a substantial improvement over conventional thin-film antireflection coating technologies. Step-graded antireflection structures also exhibit excellent omnidirectional performance, and have recently been demonstrated with good performance in medium wavelength and long wavelength IR spectral bands.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117084691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Soner Balci, A. Maleski, Matheus Mello Nascimento, E. Philip, Ju‐Hyung Kim, P. Kung, S. Kim
{"title":"Independent component analysis applications on THz sensing and imaging","authors":"Soner Balci, A. Maleski, Matheus Mello Nascimento, E. Philip, Ju‐Hyung Kim, P. Kung, S. Kim","doi":"10.1117/12.2228925","DOIUrl":"https://doi.org/10.1117/12.2228925","url":null,"abstract":"We report Independent Component Analysis (ICA) technique applied to THz spectroscopy and imaging to achieve a blind source separation. A reference water vapor absorption spectrum was extracted via ICA, then ICA was utilized on a THz spectroscopic image in order to clean the absorption of water molecules from each pixel. For this purpose, silica gel was chosen as the material of interest for its strong water absorption. The resulting image clearly showed that ICA effectively removed the water content in the detected signal allowing us to image the silica gel beads distinctively even though it was totally embedded in water before ICA was applied.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126853218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Sood, I. Lund, J. Zeller, Y. Puri, H. Efstathiadis, P. Haldar, N. Dhar, Jay S. Lewis, P. Wijewarnasuriya
{"title":"Development of graphene based detectors for EO/ IR applications","authors":"A. Sood, I. Lund, J. Zeller, Y. Puri, H. Efstathiadis, P. Haldar, N. Dhar, Jay S. Lewis, P. Wijewarnasuriya","doi":"10.1117/12.2229649","DOIUrl":"https://doi.org/10.1117/12.2229649","url":null,"abstract":"Graphene has amazing abilities due to its unique band structure characteristics defining its enhanced electrical capabilities for a material with the highest characteristic mobility known to exist at room temperature. The high mobility of graphene occurs due to electron delocalization and weak electron phonon interaction making graphene an ideal material for electrical applications requiring high mobility and fast response times. In this paper, we are going to focus on the benefits along with some of the limitations with using graphene in infrared (IR) devices, electro-optic (EO) devices, and field effect transistors (FET) for radio frequency (RF) applications.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127512949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Tenma, M. Matsuzaka, R. Sako, K. Takase, K. Chiba
{"title":"New high performance Si for optical devices","authors":"T. Tenma, M. Matsuzaka, R. Sako, K. Takase, K. Chiba","doi":"10.1117/12.2239234","DOIUrl":"https://doi.org/10.1117/12.2239234","url":null,"abstract":"Against the backdrop of a growing demand in the areas of smart buildings, security, vehicle installation, and other applications, the market for far infrared cameras is expected to grow significantly in the future. However, since germanium (Ge) and chalcogenide glass, which have been used as the lens materials of far infrared cameras, are very expensive or highly toxic, there are some problems supporting the growing demand. We have therefore focused attention on silicon, which is inexpensive and less toxic. Although silicon has been used as a lens material of far infrared cameras, there are some problems remaining to be solved: Cz silicon is inexpensive but delivers low transmittance, and Fz silicon delivers sufficient transmittance but is expensive. We have developed New Cz silicon, which delivers high transmittance as Fz silicon does, and is inexpensive as conventional Cz silicon is. We have already started its sample work at both companies in Japan and overseas and have obtained excellent performance results. Mass production is scheduled to start in this fiscal year.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"38 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131471807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Maddox, M. Ren, M. Woodson, S. R. Bank, J. Campbell
{"title":"Recent progress in avalanche photodiodes for sensing in the IR spectrum","authors":"S. Maddox, M. Ren, M. Woodson, S. R. Bank, J. Campbell","doi":"10.1117/12.2229774","DOIUrl":"https://doi.org/10.1117/12.2229774","url":null,"abstract":"Abstract—We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, AlxIn1-xAsySb1-y, grown lattice-matched on GaSb substrates. By varying the aluminum content the direct bandgap can be tuned from 0.25 eV (0% aluminum) to 1.24 eV (75% aluminum), corresponding to photon wavelengths from 5000 nm to 1000 nm, with the transition from direct-gap to indirect-gap occurring at ~1.18 eV (~72% aluminum), or 1050 nm. This has been used to fabricate separate absorption, charge, and multiplication (SACM) APDs using Al0.7In0.3As0.3Sb0.7 for the multiplication region and Al0.4In0.6As0.3Sb0.7 for the absorber. Gain values as high as 100 have been achieved and the excess noise factor is characterized by a k value of 0.01, which is comparable to or below that of Si. In addition, since the bandgap of the absorption region is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127099879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Terahertz sensing with waveguides","authors":"M. Gerhard, R. Beigang, M. Rahm","doi":"10.1117/12.2224106","DOIUrl":"https://doi.org/10.1117/12.2224106","url":null,"abstract":"We study and compare terahertz wave propagation in trapezoidal hollow-core aluminum waveguides with and without ridge with respect to attenuation and single-mode spectral bandwidth. Furthermore, we demonstrate a waveguide-based terahertz interferometer for terahertz sensing based on pure amplitude measurements without the necessity for a direct phase measurement.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130743836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Evaluation of the use of 3D printing and imaging to create working replica keys","authors":"J. Straub, Scott D. Kerlin","doi":"10.1117/12.2223858","DOIUrl":"https://doi.org/10.1117/12.2223858","url":null,"abstract":"This paper considers the efficacy of 3D scanning and printing technologies to produce duplicate keys. Duplication of keys, based on remote-sensed data represents a significant security threat, as it removes pathways to determining who illicitly gained access to a secured premises. Key to understanding the threat posed is the characterization of the easiness of gaining the required data for key production and an understanding of how well keys produced under this method work. The results of an experiment to characterize this are discussed and generalized to different key types. The effect of alternate sources of data on imaging requirements is considered.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115088011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Ding, X. Tong, Liang Chen, Pan Hu, Di Huang, Minli Zhao, H. Wen
{"title":"A study on optical coherence tomography using high frequency swept source","authors":"L. Ding, X. Tong, Liang Chen, Pan Hu, Di Huang, Minli Zhao, H. Wen","doi":"10.1117/12.2223404","DOIUrl":"https://doi.org/10.1117/12.2223404","url":null,"abstract":"Optical coherence tomography based on ultra technology is used for the assessment of subcutaneous tissue. Using high swept laser technology based on Fourier domain mode locking (FDML), the system operated in the 1300 nm wavelength range with axial scan rate of 150 kHz. Imaging at this wavelength range reduces optical scattering and improves imaging penetration depths in the tissues. The laser consists of a semiconductor amplifier as the gain medium, a tunable Fabry-Perot filter to change the wavelengthcand a long fiber ring cavity. The tuning range of laser is 102 nm. A balanced detector is used for spectra collection instead of the expensive CCD.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127797076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Zeller, C. Rouse, H. Efstathiadis, P. Haldar, Jay S. Lewis, N. Dhar, P. Wijewarnasuriya, Y. Puri, A. Sood
{"title":"Development of silicon-germanium visible-near infrared arrays","authors":"J. Zeller, C. Rouse, H. Efstathiadis, P. Haldar, Jay S. Lewis, N. Dhar, P. Wijewarnasuriya, Y. Puri, A. Sood","doi":"10.1117/12.2229650","DOIUrl":"https://doi.org/10.1117/12.2229650","url":null,"abstract":"Photodetectors based on germanium which do not require cooling and can provide good near-infrared (NIR) detection performance offer a low-cost alternative to conventional infrared sensors based on material systems such as InGaAs, InSb, and HgCdTe. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated Ge based PIN photodetectors on 300 mm diameter Si wafers to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ (boron) Ge seed/buffer layer, and subsequent higher temperature deposition of a thicker Ge intrinsic layer. This is followed by selective ion implantation of phosphorus of various concentrations to form n+ Ge regions, deposition of a passivating oxide cap, and then top copper contacts to complete the PIN detector devices. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxially grown layers and fabricated detector devices, and these results are presented. The I-V response of the photodetector devices with and without illumination was also measured, for which the Ge based photodetectors consistently exhibited low dark currents of around ~1 nA at -1 V bias.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114179710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Michael P. Hirsch, T. Mcguire, Michael Parsons, S. Leake, J. Straub
{"title":"Enablement of scientific remote sensing missions with in-space 3D printing","authors":"Michael P. Hirsch, T. Mcguire, Michael Parsons, S. Leake, J. Straub","doi":"10.1117/12.2223467","DOIUrl":"https://doi.org/10.1117/12.2223467","url":null,"abstract":"This paper provides an overview of the capability of a 3D printer to successfully operate in-space to create structures and equipment useful in the field of scientific remote sensing. Applications of this printer involve oceanography, weather tracking, as well as space exploration sensing. The design for the 3D printer includes a parabolic array to collect and focus thermal energy. This thermal energy then be used to heat the extrusion head, allowing for the successful extrusion of the print material. Print material can range from plastics to metals, with the hope of being able to extrude aluminum for its low-mass structural integrity and its conductive properties. The printer will be able to print structures as well as electrical components. The current process of creating and launching a remote sensor into space is constrained by many factors such as gravity on earth, the forces of launch, the size of the launch vehicle, and the number of available launches. The design intent of the in-space 3D printer is to ease or eliminate these constraints, making space-based scientific remote sensors a more readily available resource.","PeriodicalId":299313,"journal":{"name":"SPIE Commercial + Scientific Sensing and Imaging","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126208159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}