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2020 33rd International Vacuum Nanoelectronics Conference (IVNC)最新文献

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Test of field emission data using Murphy-Good coordinates for emitters based on carbon nanotubes 基于碳纳米管发射体的墨菲-古德坐标场发射数据测试
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203252
E. O. Popov, A. G. Kolosko, S. Filippov
{"title":"Test of field emission data using Murphy-Good coordinates for emitters based on carbon nanotubes","authors":"E. O. Popov, A. G. Kolosko, S. Filippov","doi":"10.1109/IVNC49440.2020.9203252","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203252","url":null,"abstract":"Developed test allows to determine the correspondence of the experimental data to the classical field emission dependence. The test uses the Elinson-Shrednik approximation to the current-voltage characteristics in the classical Fowler-Nordheim coordinates, as well as the modern Forbes-Deane approximation with modified Murphy-Good coordinates. We created the computerized experimental system for online calculation of the effective parameters of the emitters with stochastic analysis of its fluctuations and test the experimental data for correspondence to the classical field emission theory with fragmentation of the current-voltage curve. The application of the test was shown by the example of study of multi-tip field emitters based on carbon nanotubes.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130292421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoscale Vacuum Channel Electron Sources 纳米级真空通道电子源
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203423
G. Rughoobur, N. Karaulac, A. Akinwande
{"title":"Nanoscale Vacuum Channel Electron Sources","authors":"G. Rughoobur, N. Karaulac, A. Akinwande","doi":"10.1109/IVNC49440.2020.9203423","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203423","url":null,"abstract":"We present three different architectures of Si field emitter devices with self-aligned gates (single-gated, double-gated and graphene encapsulated double-gated) for high field factors, <tex>$beta$</tex>, and low turn-on voltages, <tex>$nabla_{mathrm{ON}}$</tex>. The lowest <tex>$V_{mathrm{O}mathrm{N}}$</tex> achieved was 8 V using the graphene encapsulated double-gated device. All the device architectures demonstrated linear correlation between <tex>$V_{mathrm{ON}}$</tex> and the magnitude of the slope of the Fowler-Nordheim plot, <tex>$b_{mathrm{F}mathrm{N}}$</tex>. We modeled the effects of tip radius, aperture diameters and tip position relative to the gate on <tex>$beta$</tex>, in order to reduce <tex>$V_{mathrm{ON}}$</tex>.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130406616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of field emission properties of 2-D electron accumulation and inversion layers in cleaved silicon MOS capacitors and transistors 劈裂硅MOS电容器和晶体管中二维电子积累层和反转层的场发射特性研究
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203064
Federico Palacios, T. Durowade, A. Feinerman, H. Busta, R. Gorski
{"title":"Investigation of field emission properties of 2-D electron accumulation and inversion layers in cleaved silicon MOS capacitors and transistors","authors":"Federico Palacios, T. Durowade, A. Feinerman, H. Busta, R. Gorski","doi":"10.1109/IVNC49440.2020.9203064","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203064","url":null,"abstract":"We investigated cleaved MOS capacitors and field effect transistors (FETs) for potential gate-controlled field emission. For the MOS capacitors we found that electrons can emerge from the accumulated region travelling to the gate, but only a small amount of that current is collected by an anode, probably due to insufficient field enhancement at the emission site. Initial experiments with cleaved FETs showed gate voltage dependency of the anode current. Prior to vacuum testing of these devices, we made sure that their C-V and drain current versus drain voltage dependencies were similar to their non-cleaved states, indicating that no damage at the cleaved regions occurred.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"25 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125544782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide 4H碳化硅场发射电子的能谱
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203525
K. Nikiforov, V. Trofimov, N. Egorov, V. Golubkov, V. Ilyin, A. Ivanov
{"title":"The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide","authors":"K. Nikiforov, V. Trofimov, N. Egorov, V. Golubkov, V. Ilyin, A. Ivanov","doi":"10.1109/IVNC49440.2020.9203525","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203525","url":null,"abstract":"Measurements of field emission energy distribution (FEED) by the retarding potential method have been performed for electron emission from the top of mono crystal macroemitter, made by the sublimation method, N doped (n-type) on 4 deg. off 4H-SiC wafers (0001-C). A peculiar feature, revealed from the FEED patterns is the existence of two maxima.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"9 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126066781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Space Charge Limited Transport in Si Field Emitter Arrays 硅场发射极阵列的空间电荷限制输运
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203446
W. Chern, N. Karaulac, G. Rughoobur, A. Akinwande
{"title":"Space Charge Limited Transport in Si Field Emitter Arrays","authors":"W. Chern, N. Karaulac, G. Rughoobur, A. Akinwande","doi":"10.1109/IVNC49440.2020.9203446","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203446","url":null,"abstract":"Field emitter arrays (FEAs) are cold electron sources for applications such as radio frequency (RF), ion and xray sources. For any application, the current density is of utmost importance and it is the main figure of merit. Little work has been done to understand how to geometrically optimize the design of the anode in order to provide the optimal current drive for a given voltage. It is well-known that thermionic sources obey the 1D Child-Langmuir space charge limit which provides the geometrical design considerations. Here, we investigate the impact of the 1D Child-Langmuir law on Si FEAs by changing the cathode/anode distance. We report that Si FEAs obey the classical law with one slight modification.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125234214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Relative contributions to the emission within bundles of carbon nanocone emitters 碳纳米锥发射体束内辐射的相对贡献
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203448
Darius Mofakhami, Philippe Dessante, Philippe Teste, R. Landfried, Tiberiu Minea, B. Seznec, J.-P. Mazellier, Pierre-Louis Gautherin
{"title":"Relative contributions to the emission within bundles of carbon nanocone emitters","authors":"Darius Mofakhami, Philippe Dessante, Philippe Teste, R. Landfried, Tiberiu Minea, B. Seznec, J.-P. Mazellier, Pierre-Louis Gautherin","doi":"10.1109/IVNC49440.2020.9203448","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203448","url":null,"abstract":"Herein, an original design of electron source based on an array of carbon nanocone bundles has been modeled. The contribution to the emission within bundles is investigated using a cold emission model based on the WKB approximation. The case of a specific bundle is presented where the geometry of the nanocones leads to a change of the main emitter as the voltage is ramped up. This change is shown to alter the linearity of usual Fowler-Nordheim analysis of the simulated I(V) data.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"628 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114440944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
International Steering Committee (ISC) 国际指导委员会(ISC)
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203395
{"title":"International Steering Committee (ISC)","authors":"","doi":"10.1109/ivnc49440.2020.9203395","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203395","url":null,"abstract":"","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114581624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tradeoff between proximity and aspect-ratio in optimizing the field enhancement factor of large area field emitters 大面积场发射器场增强系数优化中邻近度与宽高比的权衡
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203078
T. A. de Assis, F. F. Dall’Agnol, M. Cahay
{"title":"Tradeoff between proximity and aspect-ratio in optimizing the field enhancement factor of large area field emitters","authors":"T. A. de Assis, F. F. Dall’Agnol, M. Cahay","doi":"10.1109/IVNC49440.2020.9203078","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203078","url":null,"abstract":"The apex-field enhancement factor (aFEF) is regarded as a good parameter to characterize field electron emission (FE) devices. It quantifies how much the emitter sharp tip locally magnifies the applied external electrostatic field and enhances its FE properties. In a single tip form, the aFEF increases with the emitter's aspect ratio. However, when in a cluster or an array, the aFEF decreases due to depolarization fields from neighboring emitters. Hence, in large arrays, there is a tradeoff between the height and density to maximize its aFEF. There are experimental and theoretical works that analyze FE from carbon nanotube (CNT) arrays with fixed spacing $(c)$, fixed radii $(r)$, and varying height $(h)$. Those works discuss the existence of an aspect-ratio $(h/r)$ for which a maximum FEF is achieved. Here, we found for an infinite square array of identical hemisphere-on-cylindrical-post emitters a universal behavior, in which $gamma$ scales as $gammasimgamma s(h/c)^{0.84}$, valid for aspect-ratios $h/rgtrsim 50$ and $hlesssim 0.7c$. For $h gtrsim 0.7c$, the aFEF simply saturate at $gamma s$.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114768878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extended Abstracts for Tuesday Poster Presentations [breaker page] 周二海报展示的扩展摘要[休息页]
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203150
{"title":"Extended Abstracts for Tuesday Poster Presentations [breaker page]","authors":"","doi":"10.1109/ivnc49440.2020.9203150","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203150","url":null,"abstract":"","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124836899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic Analysis of Ultrathin Fe Films on W(011) with SFEMPA W(011)表面超薄铁膜的SFEMPA磁性分析
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203151
A. Thamm, Jiapeng Wei, M. Demydenko, D. Pescia, U. Ramsperger
{"title":"Magnetic Analysis of Ultrathin Fe Films on W(011) with SFEMPA","authors":"A. Thamm, Jiapeng Wei, M. Demydenko, D. Pescia, U. Ramsperger","doi":"10.1109/IVNC49440.2020.9203151","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203151","url":null,"abstract":"An ultra-high vacuum Scanning Tunneling Microscope (STM) is converted into a lens-less low-energy Scanning Electron Microscope when the tip-target distance is some tens of nanometers and the tip acts as a source of field emitted electrons. This primary electron beam excites locally secondary electrons out of the sample. Those escaping the tip-target junction are analyzed according to their spin. We use this technology to measure the local magnetization versus applied magnetic field in ultrathin Fe films on W(011) at room temperature. The resulting hysteresis loop is square. The coercive field has its maximum strength between 2.2 monolayers (0.07 T) and 3 monolayers (0.025 T), being larger than 0.1 T at 2.7 monolayers and decreasing to 0.0075 T at 6 monolayers. Rotation of the magnetization, domain wall pinning at incomplete layers and lattice misfits within the Fe films are discussed as possible explanations of this “singular” behavior.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121887526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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