4H碳化硅场发射电子的能谱

2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI:10.1109/IVNC49440.2020.9203525

K. Nikiforov, V. Trofimov, N. Egorov, V. Golubkov, V. Ilyin, A. Ivanov

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引用次数: 2

摘要

用延迟电位法测量了在4度外4H-SiC晶圆(0001-C)上经升华法制备的N掺杂(N型)单晶巨极发射极顶部电子发射的场发射能量分布(FEED)。从FEED模式中揭示的一个特殊特征是存在两个极大值。

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The Energy Spectrum of Field Emission Electrons from 4H Silicon Carbide

Measurements of field emission energy distribution (FEED) by the retarding potential method have been performed for electron emission from the top of mono crystal macroemitter, made by the sublimation method, N doped (n-type) on 4 deg. off 4H-SiC wafers (0001-C). A peculiar feature, revealed from the FEED patterns is the existence of two maxima.

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2020 33rd International Vacuum Nanoelectronics Conference (IVNC)

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