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2020 33rd International Vacuum Nanoelectronics Conference (IVNC)最新文献

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Extended Abstracts without Oral or Poster flash films [breaker page] 扩展摘要(不含口头或海报短片)
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203226
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引用次数: 0
Editors and Chairmen Stephen Purcell Jean-Paul Mazellier 编辑和主席Stephen Purcell Jean-Paul Mazellier
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203254
{"title":"Editors and Chairmen Stephen Purcell Jean-Paul Mazellier","authors":"","doi":"10.1109/ivnc49440.2020.9203254","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203254","url":null,"abstract":"","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114675341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Demonstration of the voltage-controlled three-beam interference of high-energy coherent electron beam 高能相干电子束压控三束干涉的论证
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203341
P. Thakkar, V. Guzenko, J. Abrahams, S. Tsujino, P. Lu, R. Dunin‐Borkowski
{"title":"Demonstration of the voltage-controlled three-beam interference of high-energy coherent electron beam","authors":"P. Thakkar, V. Guzenko, J. Abrahams, S. Tsujino, P. Lu, R. Dunin‐Borkowski","doi":"10.1109/IVNC49440.2020.9203341","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203341","url":null,"abstract":"A Boersch phase plate facilitates in-situ control of electron phase shift by altering the phase of electrons proportionally to the applied electrical potential. A device comprising of multiple such phase shifter elements will be able to modulate the wavefront of a coherent electron beam and control electron interference. In this work, we develop a fabrication method for multi-element electron phase shifter by utilizing state-of-the-art electron beam lithography and reactive ion etching techniques. We fabricated a device with three phase shifter elements in metal-insulator-metal structure and tested its electron transmission characteristics in a transmission electron microscope at beam energy of 200 keV. The experiment confirmed the voltage-controlled evolution of electron interference for individual phase shifter element. We demonstrate the voltage-controlled phase shifting properties of phase shifter elements and analyze the experimental results in comparison with 3-dimensional electrostatic simulation.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116573218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The May 2019 values of the field emission universal constants, and related matters 2019年5月场发射通用常数值及相关事项
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203190
R. Forbes
{"title":"The May 2019 values of the field emission universal constants, and related matters","authors":"R. Forbes","doi":"10.1109/IVNC49440.2020.9203190","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203190","url":null,"abstract":"Theories of electron and ion emission use various special universal constants defined as particular combinations of well-known fundamental constants. Following the May 2019 changes in the international system of measurement, this paper presents refreshed tabulations of: (a) the relevant fundamental constants, in both SI units and field emission customary units; and (b) universal constants used in field electron emission contexts, expressed in field emission customary units.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122169490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurement of field-emission induced optical emission spectra 场致发射光谱的测量
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203211
R. Peacock, W. Wuensch, G. Burt
{"title":"Measurement of field-emission induced optical emission spectra","authors":"R. Peacock, W. Wuensch, G. Burt","doi":"10.1109/IVNC49440.2020.9203211","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203211","url":null,"abstract":"Field-emission induced optical spectra have been measured from between to two electrically biased parallel copper electrodes. The measured light intensity of the optical spectra has a strong correlation with the current in the gap as the supply voltage is increased and a characteristic broadband spectrum between 550nm and 850nm. The spectrum also has some variation in intensity at different wavelengths depending on the angle of observation. Possible causes of this light include black body radiation, optical transition radiation and cathode luminescence. Further work is ongoing to determine the cause of the optical spectra, to potentially provide insight into the characteristics and evolution of emission sites.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"32 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132086624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Simulation of Surface Morphology of Two-Tier Microsized Matrix Structure of SiC FEA 两层微尺寸碳化硅基体结构表面形貌的有限元数值模拟
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203144
M. Chumak, M. Sayfullin, K. Nikiforov
{"title":"Numerical Simulation of Surface Morphology of Two-Tier Microsized Matrix Structure of SiC FEA","authors":"M. Chumak, M. Sayfullin, K. Nikiforov","doi":"10.1109/IVNC49440.2020.9203144","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203144","url":null,"abstract":"Numerical simulation is based on AFM data of surface morphology of silicon carbide field emission array (FEA) with two-tier microstructure made by SPETU LETI technology. Using COMSOL Multiphysics, the procedure for import AFM data into simulation environment is developed and the corresponding mathematical model of emission surface is constructed. Numerical model is investigated for computational mesh convergence using the calculation of electric field strength distribution by the finite element method. The optimal size of finite elements is revealed, at which the best convergence of the numerical solution is achieved, and AFM data interpolation parameters are investigated.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"370 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115904178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Atmospheric microplasma-sputtered micro and nanowires for advanced THz interconnects 用于先进太赫兹互连的大气微等离子体溅射微纳米线
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203069
Yosef Kombluth, L. Velásquez-García, I. Ehrenberg, D. Carter, K. Russell
{"title":"Atmospheric microplasma-sputtered micro and nanowires for advanced THz interconnects","authors":"Yosef Kombluth, L. Velásquez-García, I. Ehrenberg, D. Carter, K. Russell","doi":"10.1109/IVNC49440.2020.9203069","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203069","url":null,"abstract":"We report the fabrication and characterization of micro and nanowires for THz interconnects using a novel atmospheric pressure microsputterer. Wires with diameter between 400 nm and 80 μm were conformally coated with a continuous, hundreds-of-nm thick, mechanically strong gold film without requiring vacuum, a specialized atmosphere, or rotating/flipping over the wire. Electrical resistivities as low as 14 $muOmega-mathrm{m}$ were measured-compatible with THz-level signals.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124437663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Characteristics of a Vertical Carbon Nanotube Sheet Field Emitter 垂直碳纳米管片场发射极的设计与特性
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203540
Weiming Zhang, S. Deng, Tianzeng Hong, Yu Zhang
{"title":"Design and Characteristics of a Vertical Carbon Nanotube Sheet Field Emitter","authors":"Weiming Zhang, S. Deng, Tianzeng Hong, Yu Zhang","doi":"10.1109/IVNC49440.2020.9203540","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203540","url":null,"abstract":"Vacuum electronics devices require high current and high current density cathode. Carbon nanotube (CNT) cold cathode is a good electron source because of its excellent characteristics. To improve its emission area efficiency and weaken the screen effect, a novel type of vertical CNT sheet was introduced which can be fabricated using laser etching method. In field emission test, a single CNT sheet in micrometer scale can emit 13 mA current and 32.5 A/cm2 current density in pulse mode. The results demonstrated that the vertical CNT sheet has a great potential to be a high current field emitter which may benefit the application of vacuum electronics devices.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"128 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120878189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of ZnO nanowire cold cathode flat panel X-ray source module for adaptive X-ray imaging 用于自适应x射线成像的ZnO纳米线冷阴极平板x射线源模块的制作
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203293
Shuai Wang, D. Chen, Libin Wang, Xinpeng Bai, Guofu Zhang, S. Deng, JuncongShe, N. Xu, Jun Chen
{"title":"Fabrication of ZnO nanowire cold cathode flat panel X-ray source module for adaptive X-ray imaging","authors":"Shuai Wang, D. Chen, Libin Wang, Xinpeng Bai, Guofu Zhang, S. Deng, JuncongShe, N. Xu, Jun Chen","doi":"10.1109/IVNC49440.2020.9203293","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203293","url":null,"abstract":"Flat panel X-ray source enables the possibility of adaptive X-ray imaging which could achieve close range imaging. In this study, a flat panel X-ray source module based on ZnO nanowire field emitter arrays was fabricated. High resolution projection imaging using the module was achieved, which demonstrated the feasibility of adaptive X-ray imaging using nanowire FEA flat panel X-ray source.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124511567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of high-performance Carbon nanotubes cathode based on the screen printing method 基于丝网印刷方法的高性能碳纳米管阴极研究
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203176
Cong Luo, Qilong Wang, Jian Zhang, Xinyu Li, Liang Wu, Xiaobing Zhang, Ling Li, Zhiqiang Wu, Shangping Hu, Guo-Qiang Liu
{"title":"Study of high-performance Carbon nanotubes cathode based on the screen printing method","authors":"Cong Luo, Qilong Wang, Jian Zhang, Xinyu Li, Liang Wu, Xiaobing Zhang, Ling Li, Zhiqiang Wu, Shangping Hu, Guo-Qiang Liu","doi":"10.1109/IVNC49440.2020.9203176","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203176","url":null,"abstract":"This work investigates the fabrication of highperformance CNTs cathode by screen printing method for THz devices, and a circular CNTs cathode with a diameter of 0.17 mm was prepared in this work. And the experiment results show that the cathode can output a current of 2.27 mA, corresponding to a current density of 10.1 $mathrm{A}cdot mathrm{cm}^{-2}$, which shows that the printed cathode has great potential for the application demand in THz amplification devices.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130172636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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