两层微尺寸碳化硅基体结构表面形貌的有限元数值模拟

M. Chumak, M. Sayfullin, K. Nikiforov
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引用次数: 1

摘要

利用利用SPETU LETI技术制备的两层结构碳化硅场发射阵列(FEA)表面形貌的AFM数据进行了数值模拟。利用COMSOL Multiphysics开发了将AFM数据导入仿真环境的程序,并建立了相应的发射面数学模型。利用有限元法计算电场强度分布,研究了计算网格收敛的数值模型。揭示了有限元的最优尺寸,在此尺寸下数值解的最佳收敛性,并对AFM数据插值参数进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Numerical Simulation of Surface Morphology of Two-Tier Microsized Matrix Structure of SiC FEA
Numerical simulation is based on AFM data of surface morphology of silicon carbide field emission array (FEA) with two-tier microstructure made by SPETU LETI technology. Using COMSOL Multiphysics, the procedure for import AFM data into simulation environment is developed and the corresponding mathematical model of emission surface is constructed. Numerical model is investigated for computational mesh convergence using the calculation of electric field strength distribution by the finite element method. The optimal size of finite elements is revealed, at which the best convergence of the numerical solution is achieved, and AFM data interpolation parameters are investigated.
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