发布求助
文献互助 智能选刊 最新文献

2020 33rd International Vacuum Nanoelectronics Conference (IVNC)最新文献

筛选
英文 中文
Multiphoton Photo-Emission (MPPE) based on Localized Surface Plasmon Resonances by ZnO Nanorods Array with Au Particles 氧化锌纳米棒与金粒子阵列基于局部表面等离子体共振的多光子光发射
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203585
Mengjie Li, Ji Xu, Qilong Wang, Jian Zhang, Xiaobing Zhang
{"title":"Multiphoton Photo-Emission (MPPE) based on Localized Surface Plasmon Resonances by ZnO Nanorods Array with Au Particles","authors":"Mengjie Li, Ji Xu, Qilong Wang, Jian Zhang, Xiaobing Zhang","doi":"10.1109/IVNC49440.2020.9203585","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203585","url":null,"abstract":"Here, we propose the optical-assisted emission mechanism based on Localized Surface Plasmon Resonances (LSPRs) enhancement effect to improve the electron emission performance of ZnO nanorod arrays (ZNAs). By preparing gold nanoparticles on the surface of ZNAs, we proved that the low strength of the driving electric field is outstanding performance in the application of Multiphoton photo-emission and the effects of optical assistance on field emission performance of modified Au-ZNAs were investigated.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122840252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mitigating the space charge effect in a thermionic energy converter by controlling the interelectrode distance in-situ 通过原位控制电极间距离来减轻热离子能量转换器中的空间电荷效应
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203318
Mohab O. Hassan, K. Takahata, A. Nojeh
{"title":"Mitigating the space charge effect in a thermionic energy converter by controlling the interelectrode distance in-situ","authors":"Mohab O. Hassan, K. Takahata, A. Nojeh","doi":"10.1109/IVNC49440.2020.9203318","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203318","url":null,"abstract":"The space charge cloud formed near the surface of an electron emitter inhibits further electron emission and transport. This effect significantly reduces the conversion efficiency in thermionic energy converters (TEC). We devised a variable interelectrode distance TEC device with an yttria-coated iridium disc emitter and a tungsten sheet collector. By reducing the interelectrode gap from 550 $mumathrm{m}$ to 50 $mumathrm{m}$, we observed a two-orders-of-magnitude increase in the collector current.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"77 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127395217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Study of Field Electron Emission in a Nanoscale Air-Channel Silicon Diode 纳米尺度空气通道硅二极管场电子发射的研究
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203201
N. N. Patyukov, G. Demin, N. Filippov, N. A. Djuzhev, M. A. Makhiboroda, V. Bespalov
{"title":"A Study of Field Electron Emission in a Nanoscale Air-Channel Silicon Diode","authors":"N. N. Patyukov, G. Demin, N. Filippov, N. A. Djuzhev, M. A. Makhiboroda, V. Bespalov","doi":"10.1109/IVNC49440.2020.9203201","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203201","url":null,"abstract":"Over the past few years, the rapid progress in the field of vacuum nanoelectronics is mainly associated with the emergence of technological methods for the formation of quasi-vacuum (air) nanoscale gap between the emitter and collector (less than 100 nm). Since the probability of ionization of gas molecules on such scales is negligible, it opens up the attractive prospects of creating field-emission devices with an air channel which operate in a THz range under atmospheric conditions. In this work, we experimentally demonstrate the field-emission behavior of a silicon diode with a nanoscale air channel of about 60 nm, which was fabricated on a sapphire substrate by means of focused ion beam (FIB) etching. Based on the density functional theory (DFT) formalism, we also perform the first-principles calculations of the field-emission current in a such diode for ultra-small air-channel lengths (up to the de Broglie wavelength), where a noticeable deviation of the current-voltage (I-V) characteristics from the classical Fowler-Nordheim equation was found. The results obtained can be used for the development of high-speed solid-state nanoelectronic devices with a nanoscale air channel.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"50 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133391378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physical properties of amorphous Selenium superlattice structures for future X-ray detectors 用于未来x射线探测器的非晶硒超晶格结构的物理性质
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203484
J. D. John, Noritoshi Miyachi, Kunitaka Enomoto, K. Okano, T. Masuzawa, T. Yamada, S. Okano, D. Zahn, D. Chua
{"title":"Physical properties of amorphous Selenium superlattice structures for future X-ray detectors","authors":"J. D. John, Noritoshi Miyachi, Kunitaka Enomoto, K. Okano, T. Masuzawa, T. Yamada, S. Okano, D. Zahn, D. Chua","doi":"10.1109/IVNC49440.2020.9203484","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203484","url":null,"abstract":"Superlattices exhibit desirable electronic properties such as resonant tunneling. However, there is a high technology barrier for fabricating such structures, using methods such as molecular beam epitaxy (MBE). We fabricated multilayer structures of amorphous materials using the technologically simple method of rotational evaporation, and observed physical characteristics related to superlattice structures. The multi-layer structure was confirmed using Time of Flight Secondary Ion Mass Spectroscopy (TOF-SIMS). The energy band structure of the superlattice was measured using Deep Level Transient Spectroscopy (DLTS). The results show minibands associated with superlattice structures, and oscillations in the transport properties. Using Current-Voltage (I-V) characterization, we could clearly observe such oscillations. From these results, quantum features associated with superlattices could be observed in multilayer amorphous Se fabricated using the rotational evaporation.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132680338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-topographic contrast in constant-current Scanning Field-Emission Microscopy (SFEM) 恒流扫描场发射显微镜(SFEM)中的非地形对比
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203360
D. Westholm, J. Wei, G. Bertolini, O. Gürlü, D. Pescia, U. Ramsperger
{"title":"Non-topographic contrast in constant-current Scanning Field-Emission Microscopy (SFEM)","authors":"D. Westholm, J. Wei, G. Bertolini, O. Gürlü, D. Pescia, U. Ramsperger","doi":"10.1109/IVNC49440.2020.9203360","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203360","url":null,"abstract":"Scanning Tunneling Microscopy is performed in the conventional (tunneling) and in the field-emission regime. Images of W(110)-surfaces with and without some carbon content are taken in the constant current mode, in which the tip-target vertical distance displaces to compensate for the changes of the tunneling, respectively, field emission current. In the field emission regime, we observe tip-target displacements that are not related to the topographic contrast.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114305475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Facetless electron emission source for reducing virtual source size 减少虚拟源尺寸的无面电子发射源
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203311
Soichiro Matsunaga, Y. Sohda
{"title":"Facetless electron emission source for reducing virtual source size","authors":"Soichiro Matsunaga, Y. Sohda","doi":"10.1109/IVNC49440.2020.9203311","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203311","url":null,"abstract":"Virtual source size of an electron source is key for the high spatial resolution of electron microscopy. A small source size has been achieved by using small crystal facets; however, the emission current is reduced when the facet area is decreased. To achieve a small source size while maintaining a large emission current, we conceived of the novel idea of a facetless electron source with a curved emission surface. Computational simulations of electron trajectories revealed that the virtual source, which is the spot at which back-projected trajectories are focused, of a facetless source was smaller than that of the conventional source with a facet and that the brightness of the facetless source was approximately four times larger. To achieve electron emission from a curved surface, we fabricated a facetless source by coating amorphous carbon on a metallic electron source. Electron emission from the coated surface showed a homogeneous pattern, which is clear evidence for emission from the curved surface of the facetless source.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128944677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon Field Emitters fabricated by Dicing-Saw and TMAH-Etch 用切片锯和tmah蚀刻制备硅场发射体
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203262
S. Edler, J. Biba, W. Hansch, M. Bachmann, F. Düsberg, C. Langer, A. Schels, Marinus Werber, A. Pahlke
{"title":"Silicon Field Emitters fabricated by Dicing-Saw and TMAH-Etch","authors":"S. Edler, J. Biba, W. Hansch, M. Bachmann, F. Düsberg, C. Langer, A. Schels, Marinus Werber, A. Pahlke","doi":"10.1109/IVNC49440.2020.9203262","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203262","url":null,"abstract":"A novel silicon field emission source is presented, which is fabricated by saw dicing and TMAH-etching. Samples with different tip densities were investigated. Due to the fabrication process a higher tip density leads to a lower tip height. Very similar characteristics were observed for all different geometries. Emission currents of 10 $mumathrm{A}$ are obtained at electrical fields of 6 - 8 $mathrm{V}/mu mathrm{m}$. The changes in the characteristics after 10 h at a regulated current of 10 $mumathrm{m}mathrm{A}$ and a pressure of 10–5 mbar were investigated. The observed shift in necessary field reduces with the number of tips and is lower in p-type compared to n-type samples.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132199912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low energy electron transmission through suspended graphene layers 通过悬浮石墨烯层的低能量电子传输
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203389
G. Rughoobur, L. Jain, A. Akinwande
{"title":"Low energy electron transmission through suspended graphene layers","authors":"G. Rughoobur, L. Jain, A. Akinwande","doi":"10.1109/IVNC49440.2020.9203389","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203389","url":null,"abstract":"We measured the transmission of low energy $(< 250$ eV) electrons through suspended graphene membranes. Different number of graphene layers (1, 2 and 5) were characterized using electrons generated from a low voltage Si field emitter array. Biasing the membranes at a different voltage allowed us to control the energy of electrons impinging on the graphene layer. We demonstrate that for electron energies lower than 100 eV, the number of collected electrons even exceeds the number of incident electrons, which could be because of secondary electrons generated in the graphene layers.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130495289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Local Organizing, Scientific Advisory and Program Committee 地方组织、科学咨询和项目委员会
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203365
{"title":"Local Organizing, Scientific Advisory and Program Committee","authors":"","doi":"10.1109/ivnc49440.2020.9203365","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203365","url":null,"abstract":"","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123490422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信