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2020 33rd International Vacuum Nanoelectronics Conference (IVNC)最新文献

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2020 IVNC Sponsors
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203317
{"title":"2020 IVNC Sponsors","authors":"","doi":"10.1109/ivnc49440.2020.9203317","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203317","url":null,"abstract":"","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114607135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-temperature scanning field emission microscope with polarization analysis 带偏振分析的低温扫描场发射显微镜
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203490
A. Thamm, M. Demydenko, T. Michlmayr, D. Pescia, U. Ramsperger
{"title":"Low-temperature scanning field emission microscope with polarization analysis","authors":"A. Thamm, M. Demydenko, T. Michlmayr, D. Pescia, U. Ramsperger","doi":"10.1109/IVNC49440.2020.9203490","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203490","url":null,"abstract":"the design of the low-temperature scanning probe microscope, which works in field emission regime with spin polarization analysis, is proposed. A performance at temperature of 77 K has been achieved. The first result of STM imaging with atomic resolution is demonstrated.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123518510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Circuit Models of Field Emission Silicon Diode and Transistor with a Nanoscale Vacuum Channel 具有纳米级真空通道的场发射硅二极管和晶体管电路模型
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203217
I. D. Evsikov, G. Demin, P. Glagolev, N. Djuzhev, M. A. Makhiboroda, V. Bespalov, S. Filippov, A. G. Kolosko, E. O. Popov
{"title":"Circuit Models of Field Emission Silicon Diode and Transistor with a Nanoscale Vacuum Channel","authors":"I. D. Evsikov, G. Demin, P. Glagolev, N. Djuzhev, M. A. Makhiboroda, V. Bespalov, S. Filippov, A. G. Kolosko, E. O. Popov","doi":"10.1109/IVNC49440.2020.9203217","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203217","url":null,"abstract":"Circuit models of field emission silicon diode and transistor with a nanoscale vacuum channel are presented. Parameters of the equivalent circuit of these vacuum devices such as parasitic resistances and capacitances have been calculated to make an analysis of the circuit performance. Models are based on the modified Fowler-Nordheim equation, taking into account the variation of field-enhancement factors from the geometric parameters at the nanoscale. Output current-voltage characteristics of the diode and transistor were calculated using SPICE simulator. The obtained results can found their practical application in the development of a new generation of nanoscale vacuum channel field emission devices.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121780860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tuesday, 7th July 2020 2020年7月7日，星期二
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203324
Jian Zhang, Xiaobing Zhang, W. Wuensch, G. Burt, C. G. H. Walker, T. Bähler, T. Michlmayr, U., Ramsperger, D. Pescia, A. Suri, Vitaliy Guzenko, J. Abrahams
{"title":"Tuesday, 7th July 2020","authors":"Jian Zhang, Xiaobing Zhang, W. Wuensch, G. Burt, C. G. H. Walker, T. Bähler, T. Michlmayr, U., Ramsperger, D. Pescia, A. Suri, Vitaliy Guzenko, J. Abrahams","doi":"10.1109/ivnc49440.2020.9203324","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203324","url":null,"abstract":"15:30-15:45 Measurement of field-emission induced optical emission spectra Ruth Peacock, Walter Wuensch, Graeme Burt T1.03 Pg. 65 15:45-16:00 Improving the Detection and the Analysis of Energy Filtered and Spin Polarised Electrons with the implementation of a Miniature Energy Analyser A. Bellissimo, C.G.H. Walker, T. Bähler, T. Michlmayr, U. Ramsperger, D. Pescia, A. Suri, A. Pratt, S. Tear, M. M. El-Gomati T1.04 Pg. 67","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126689530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extended Abstracts for Monday Oral Presentations [breaker page] 周一口头报告的扩展摘要[休息页]
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203083
{"title":"Extended Abstracts for Monday Oral Presentations [breaker page]","authors":"","doi":"10.1109/ivnc49440.2020.9203083","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203083","url":null,"abstract":"","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114908795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Investigation of the Energy Broadening of Thermionic Electrons 热电子能量展宽的实验研究
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203097
Mike Chang, G. Sawatzky, A. Nojeh
{"title":"Experimental Investigation of the Energy Broadening of Thermionic Electrons","authors":"Mike Chang, G. Sawatzky, A. Nojeh","doi":"10.1109/IVNC49440.2020.9203097","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203097","url":null,"abstract":"Thermionic emitters play a crucial role in many fields of science and technology given their prevalence in electron beam instruments and devices. It is believed that the energy spread of thermionic electrons is larger than the intrinsic thermal width, due to extrinsic phenomena such as the Boersch effect. Here, we report on measurements of the energy spread of a single-crystalline tungsten thermionic emitter and the extraction of the Boersch contribution.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"192 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122118323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of Gated ZnO Nanowire Field Emitter Arrays for Pulsed Flat Panel X-ray Source 脉冲平板x射线源门控ZnO纳米线场发射阵列的制备
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203370
Chengyun Wang, Long Zhao, Libin Wang, Xinpeng Bai, S. Deng, JuncongShe, N. Xu, Jun Chen
{"title":"Fabrication of Gated ZnO Nanowire Field Emitter Arrays for Pulsed Flat Panel X-ray Source","authors":"Chengyun Wang, Long Zhao, Libin Wang, Xinpeng Bai, S. Deng, JuncongShe, N. Xu, Jun Chen","doi":"10.1109/IVNC49440.2020.9203370","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203370","url":null,"abstract":"In this study, a gated ZnO nanowire field emitter arrays (FEAs) was fabricated for the application of pulsed flat panel X-ray source. The ZnO nanowires were grown using thermal oxidation method and the growth ZnO nanowires in the device structure was optimized by adjusting the oxidation atmosphere. The pulsed response of the FEAs was studied and corresponding X-ray emission was detected.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122631828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Space-Charge-Limited Conduction in Forward Biased Schottky Junction and Its Effect on Field Emission from Crystalline Gold-Silver Alloy Nanoparticle Decorated Si Nanowire 正偏肖特基结空间电荷限制传导及其对纳米金-银合金修饰硅纳米线场发射的影响
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203439
Jiajie Yu, Miaoxuan Zeng, Yifeng Huang, Jun Chen, S. Deng, J. She
{"title":"Space-Charge-Limited Conduction in Forward Biased Schottky Junction and Its Effect on Field Emission from Crystalline Gold-Silver Alloy Nanoparticle Decorated Si Nanowire","authors":"Jiajie Yu, Miaoxuan Zeng, Yifeng Huang, Jun Chen, S. Deng, J. She","doi":"10.1109/IVNC49440.2020.9203439","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203439","url":null,"abstract":"The abstract reports the fabrication, the enhanced field emission and the underlying physics of Au-Ag alloy nanoparticle capped silicon nanowires. It was found that the Au-Ag/Si nanojunction with space-charge-limited conduction in series with individual nanowire could improve the field emission stability and enhance the emission current by serving as a ballasted unit. This work clarifies the enhancement effect of a forward biased junction on field emission which is commonly ignored and provides a new method for obtaining high performance silicon nanowire field emitter.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122711348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Addressable field emitter arrays with high density patterned ZnO nanowire emitters and under-gate structure 具有高密度图案化ZnO纳米线发射体和栅极下结构的可寻址场发射体阵列
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203549
Xuqi Wang, Libin Wang, Xinpeng Bai, J. She, S. Deng, Jun Chen
{"title":"Addressable field emitter arrays with high density patterned ZnO nanowire emitters and under-gate structure","authors":"Xuqi Wang, Libin Wang, Xinpeng Bai, J. She, S. Deng, Jun Chen","doi":"10.1109/ivnc49440.2020.9203549","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203549","url":null,"abstract":"Addressable ZnO nanowire field emitter arrays have potential application in vacuum microelectronic devices. In this study, an under-gate structure ZnO nanowire field emitter arrays were designed and successfully fabricated using microfabrication process. High density patterned ZnO nanowires were used in each pixel to minimized the screen effect and increase the emission current. Modulation of field emission current by the gate voltage was achieved.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124426082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Schedule Summary 计划总结
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203532
{"title":"Schedule Summary","authors":"","doi":"10.1109/ivnc49440.2020.9203532","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203532","url":null,"abstract":"","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123357142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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