S. Edler, J. Biba, W. Hansch, M. Bachmann, F. Düsberg, C. Langer, A. Schels, Marinus Werber, A. Pahlke
{"title":"用切片锯和tmah蚀刻制备硅场发射体","authors":"S. Edler, J. Biba, W. Hansch, M. Bachmann, F. Düsberg, C. Langer, A. Schels, Marinus Werber, A. Pahlke","doi":"10.1109/IVNC49440.2020.9203262","DOIUrl":null,"url":null,"abstract":"A novel silicon field emission source is presented, which is fabricated by saw dicing and TMAH-etching. Samples with different tip densities were investigated. Due to the fabrication process a higher tip density leads to a lower tip height. Very similar characteristics were observed for all different geometries. Emission currents of 10 $\\mu\\mathrm{A}$ are obtained at electrical fields of 6 - 8 $\\mathrm{V}/\\mu \\mathrm{m}$. The changes in the characteristics after 10 h at a regulated current of 10 $\\mu\\mathrm{m}\\mathrm{A}$ and a pressure of 10–5 mbar were investigated. The observed shift in necessary field reduces with the number of tips and is lower in p-type compared to n-type samples.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Silicon Field Emitters fabricated by Dicing-Saw and TMAH-Etch\",\"authors\":\"S. Edler, J. Biba, W. Hansch, M. Bachmann, F. Düsberg, C. Langer, A. Schels, Marinus Werber, A. Pahlke\",\"doi\":\"10.1109/IVNC49440.2020.9203262\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel silicon field emission source is presented, which is fabricated by saw dicing and TMAH-etching. Samples with different tip densities were investigated. Due to the fabrication process a higher tip density leads to a lower tip height. Very similar characteristics were observed for all different geometries. Emission currents of 10 $\\\\mu\\\\mathrm{A}$ are obtained at electrical fields of 6 - 8 $\\\\mathrm{V}/\\\\mu \\\\mathrm{m}$. The changes in the characteristics after 10 h at a regulated current of 10 $\\\\mu\\\\mathrm{m}\\\\mathrm{A}$ and a pressure of 10–5 mbar were investigated. The observed shift in necessary field reduces with the number of tips and is lower in p-type compared to n-type samples.\",\"PeriodicalId\":292538,\"journal\":{\"name\":\"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)\",\"volume\":\"88 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC49440.2020.9203262\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC49440.2020.9203262","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon Field Emitters fabricated by Dicing-Saw and TMAH-Etch
A novel silicon field emission source is presented, which is fabricated by saw dicing and TMAH-etching. Samples with different tip densities were investigated. Due to the fabrication process a higher tip density leads to a lower tip height. Very similar characteristics were observed for all different geometries. Emission currents of 10 $\mu\mathrm{A}$ are obtained at electrical fields of 6 - 8 $\mathrm{V}/\mu \mathrm{m}$. The changes in the characteristics after 10 h at a regulated current of 10 $\mu\mathrm{m}\mathrm{A}$ and a pressure of 10–5 mbar were investigated. The observed shift in necessary field reduces with the number of tips and is lower in p-type compared to n-type samples.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
