高能相干电子束压控三束干涉的论证

P. Thakkar, V. Guzenko, J. Abrahams, S. Tsujino, P. Lu, R. Dunin‐Borkowski
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引用次数: 0

摘要

布尔施相板通过改变电子的相位与施加的电势成比例来促进电子相移的原位控制。由多个这样的移相器元件组成的装置将能够调制相干电子束的波前并控制电子干扰。在这项工作中,我们利用最先进的电子束光刻和反应离子蚀刻技术,开发了一种多元素电子移相器的制造方法。我们制作了一种金属-绝缘体-金属结构的三移相元件器件,并在透射电子显微镜下测试了其束流能量为200kev时的电子传输特性。实验证实了单个移相器元件电子干扰的电压控制演化。我们展示了移相元件的压控移相特性,并将实验结果与三维静电模拟结果进行了对比分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Demonstration of the voltage-controlled three-beam interference of high-energy coherent electron beam
A Boersch phase plate facilitates in-situ control of electron phase shift by altering the phase of electrons proportionally to the applied electrical potential. A device comprising of multiple such phase shifter elements will be able to modulate the wavefront of a coherent electron beam and control electron interference. In this work, we develop a fabrication method for multi-element electron phase shifter by utilizing state-of-the-art electron beam lithography and reactive ion etching techniques. We fabricated a device with three phase shifter elements in metal-insulator-metal structure and tested its electron transmission characteristics in a transmission electron microscope at beam energy of 200 keV. The experiment confirmed the voltage-controlled evolution of electron interference for individual phase shifter element. We demonstrate the voltage-controlled phase shifting properties of phase shifter elements and analyze the experimental results in comparison with 3-dimensional electrostatic simulation.
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