用于先进太赫兹互连的大气微等离子体溅射微纳米线

2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI:10.1109/IVNC49440.2020.9203069

Yosef Kombluth, L. Velásquez-García, I. Ehrenberg, D. Carter, K. Russell

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引用次数: 0

摘要

我们报道了用一种新型的常压微溅射器制造和表征太赫兹互连的微纳米线。直径在400纳米到80 μm之间的金属丝被连续地涂上了一层数百纳米厚、机械强度高的金膜，而不需要真空、专门的气氛或旋转/翻转金属丝。电阻率低至14 $\mu\Omega-\mathrm{m}$，与太赫兹级信号兼容。

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Atmospheric microplasma-sputtered micro and nanowires for advanced THz interconnects

We report the fabrication and characterization of micro and nanowires for THz interconnects using a novel atmospheric pressure microsputterer. Wires with diameter between 400 nm and 80 μm were conformally coated with a continuous, hundreds-of-nm thick, mechanically strong gold film without requiring vacuum, a specialized atmosphere, or rotating/flipping over the wire. Electrical resistivities as low as 14 $\mu\Omega-\mathrm{m}$ were measured-compatible with THz-level signals.

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2020 33rd International Vacuum Nanoelectronics Conference (IVNC)

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