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2020 33rd International Vacuum Nanoelectronics Conference (IVNC)最新文献

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Correction factors for field emission from a nanoscopic emitter based on ab initio calculation of the electron eigenstates 基于电子特征状态的非初始计算的纳米发射器场发射修正系数
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203267
A. Chatziafratis, J. Xanthakis
{"title":"Correction factors for field emission from a nanoscopic emitter based on ab initio calculation of the electron eigenstates","authors":"A. Chatziafratis, J. Xanthakis","doi":"10.1109/IVNC49440.2020.9203267","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203267","url":null,"abstract":"We have recently calculated the quantized eigenstates of an electron emitter whose form is that of a paraboloid with nanoscopic radius of curvature $mathrm{R}$ at the apex. We have used these eigenstates to calculate the emitted current from such a nanoscale emitter. We find that the corresponding Fowler-Nordheim (FN) curves are strongly nonlinear deviating from the well-known behavior predicted by the traditional FN theory. To make our theory easily accessible, we present factors that rectify the original FN equation for the emitted current as a function of known $mathrm{R}$., compensating for the quantum confinement effects of high apical curvature. These practical-interest correction factors, however, are derived from exact analytical calculations for electron quantum states inside such a nanoscale emitter tip.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128101512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improving the Detection and the Analysis of Energy Filtered and Spin Polarised Electrons with the implementation of a Miniature Energy Analyser 微型能量分析仪的实现提高了对能量滤波和自旋极化电子的检测和分析
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203493
A. Bellissimo, C. Walker, T. Bähler, T. Michlmayr, U. Ramsperger, D. Pescia, A. Suri, A. Pratt, S. Tear, M. El-Gomati
{"title":"Improving the Detection and the Analysis of Energy Filtered and Spin Polarised Electrons with the implementation of a Miniature Energy Analyser","authors":"A. Bellissimo, C. Walker, T. Bähler, T. Michlmayr, U. Ramsperger, D. Pescia, A. Suri, A. Pratt, S. Tear, M. El-Gomati","doi":"10.1109/IVNC49440.2020.9203493","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203493","url":null,"abstract":"With the aim of improving detection and analysis of energy filtered electrons in the Scanning Field-Emission Microscope (SFEM) and of the spin polarised electrons in the SFEM with Polarisation Analysis (SFEMPA) tests are performed on a miniature electron detection unit employing a Bessel Box energy analyser. Even in conventional electron microscopes, the detection of low-energy electrons (with kinetic energies of the order of 100eV or lower) is inherently difficult due to the presence of electrostatic (and magnetic) fields in proximity of the beam-target interaction region, inhibiting the escape of these electrons and complicating the interpretation of their detected signal. The reduced dimensions of such a compact energy analyser - with a length of 1&1/2 channeltrons - consent its employment close to the sample surface, thus minimising the aforementioned fields effects. Experimental results demonstrating the capability of this analyser to collect electron spectra are discussed.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132182164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extended Abstracts for Tuesday Oral Presentations [breaker page] 周二口头报告的扩展摘要[休息页]
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203264
{"title":"Extended Abstracts for Tuesday Oral Presentations [breaker page]","authors":"","doi":"10.1109/ivnc49440.2020.9203264","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203264","url":null,"abstract":"","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117229610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
33rd International Vacuum Nanoelectronics Conference (IVNC) July 6-7, 2020 第33届国际真空纳米电子学会议(IVNC)， 2020年7月6-7日
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/ivnc49440.2020.9203263
{"title":"33rd International Vacuum Nanoelectronics Conference (IVNC) July 6-7, 2020","authors":"","doi":"10.1109/ivnc49440.2020.9203263","DOIUrl":"https://doi.org/10.1109/ivnc49440.2020.9203263","url":null,"abstract":"","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123531469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of electrical conduction on the saturation of electron emission from diamond needles 导电对金刚石针电子发射饱和的影响
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203473
I. Blum, M. Borz, A. Vella, O. Torresin, J. Mauchain, B. Chalopin
{"title":"Effect of electrical conduction on the saturation of electron emission from diamond needles","authors":"I. Blum, M. Borz, A. Vella, O. Torresin, J. Mauchain, B. Chalopin","doi":"10.1109/IVNC49440.2020.9203473","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203473","url":null,"abstract":"Single crystal diamond needles are promising structures as point electron sources. However, the low electrical conductivity of diamond limits their application as high brightness electron sources. Here we study numerically the field emission behavior of single crystal diamond needles in order to better explain the link between their low electrical conduction, and phenomena related to the saturation of the Fowler-Nordheim plot such as the nonhomogeneous field distribution in the needle. Comparison with experimental results shows that the conduction behavior depends on the diamond geometry. Moreover, the Fowler-Nordheim plot saturation is shown to be affected by the electrostatic environment.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123227059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Individually Addressable Fully Integrated Field Emission Electron Source Fabricated by Laser Micromachining of Silicon 用激光微加工硅制备可单独寻址的全集成场发射电子源
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203470
R. Ławrowski, M. Hausladen, R. Schreiner
{"title":"Individually Addressable Fully Integrated Field Emission Electron Source Fabricated by Laser Micromachining of Silicon","authors":"R. Ławrowski, M. Hausladen, R. Schreiner","doi":"10.1109/IVNC49440.2020.9203470","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203470","url":null,"abstract":"A cathode with individually addressable Si tips allows the observation of the activation procedure and emission behaviour of each field emission emitter at any time of the measurement. The cathode consists of an array of $2mathrm{x}2$ conically shaped emitter structures, which were fabricated by laser micromachining and wet etching of a Si substrate bonded on a glass carrier. Using the same process, a Si extractions grid was fabricated and mounted onto the emitter. Integral field emission measurements were performed in a diode configuration in a vacuum chamber at pressures of about 10–9 mbar. The emitters show an onset voltage between 200 V and 300 V. The emission current for each emitter on the cathode was regulated to a given value (1.0 $mumathrm{A}, 2.5mumathrm{A}, 5.0mu mathrm{A})$ by an external regulating circuit and was recorded individually during the measurement. With such approach, the relation between the emission behaviour and the geometry of emitters can be studied in detail. In addition, the current stabilization of each emitters of an array can be investigated, which led to a current stability of better than 0.5%.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129985624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
OPAL-MITHRA: Self-consistent Software for Start-to-End Simulation of Undulator-based Facilities OPAL-MITHRA:自一致软件，用于基于波动器的设施的开始到结束模拟
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203404
Arnau Albà, A. Adelmann, A. Fallahi
{"title":"OPAL-MITHRA: Self-consistent Software for Start-to-End Simulation of Undulator-based Facilities","authors":"Arnau Albà, A. Adelmann, A. Fallahi","doi":"10.1109/IVNC49440.2020.9203404","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203404","url":null,"abstract":"We present the recently started effort and progress towards the development of a software for start-to-end simulation of accelerator facilities employing undulator radiation. The core of this effort aims at the combination of two numerical solvers, the Object Oriented Parallel Accelerator Library (OPAL), a parallel open source tool for charged-particle optics in linear accelerators and rings, including 3D space charge, and the full-wave simulation tool for free electron lasers MITHRA, which solves the electromagnetic potential equations in free-space for radiating particles propagating along an undulator using an FDTD/PIC scheme. As an example, we present the application of the OPAL-MITHRA platform for the simulation of an experiment that will take place at the Argonne Wakefield Accelerator, in which the capability of a magnetic wiggler to induce energy modulation starting from a micro-bunched electron beam will be investigated.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126407640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effect of space charge on the vacuum electron emission from a microtip 空间电荷对微针尖真空电子发射的影响
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203091
B. Seznec, T. Minea, P. Dessante, P. Teste
{"title":"Effect of space charge on the vacuum electron emission from a microtip","authors":"B. Seznec, T. Minea, P. Dessante, P. Teste","doi":"10.1109/IVNC49440.2020.9203091","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203091","url":null,"abstract":"A model which determines the electron emission from the surface of a microtip has been developed. It solves the multiphysics problem combining the heat transport and the current conservation inside the tip, which is coupled with a Monte Carlo model established to evaluate the electron space charge in front of the tip and to deduce the electric field at the surface of the tip. This modeling approach is very robust and versatile and it can be applied for several regimes lying from DC operation to nanosecond pulses.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128011954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multicathode Field Emission Configurations and their Optimization 多阴极场发射结构及其优化
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203462
E. P. Sheshin, Vladimir S. Melekescev, A. Y. Taikin, D. Ozol
{"title":"Multicathode Field Emission Configurations and their Optimization","authors":"E. P. Sheshin, Vladimir S. Melekescev, A. Y. Taikin, D. Ozol","doi":"10.1109/IVNC49440.2020.9203462","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203462","url":null,"abstract":"The use of multicathode designs allows increasing the power and reliability of cathodoluminescent devices. If the appropriate design geometry is selected, this also increases the uniformity of the electron beam irradiation of the anode and reduces the maximum current density.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121647905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparing the performance of Fowler-Nordheim plots and Murphy-Good plots 比较Fowler-Nordheim情节和Murphy-Good情节的表现
2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI: 10.1109/IVNC49440.2020.9203392
Mohammad M. Allaham, M. Mousa, R. Forbes
{"title":"Comparing the performance of Fowler-Nordheim plots and Murphy-Good plots","authors":"Mohammad M. Allaham, M. Mousa, R. Forbes","doi":"10.1109/IVNC49440.2020.9203392","DOIUrl":"https://doi.org/10.1109/IVNC49440.2020.9203392","url":null,"abstract":"Field electron emission studies normally use Fowler-Nordheim (FN) plots to analyze measured current-voltage characteristics. More precise extraction of emitter characterization parameters could perhaps be achieved if the data were plotted as a so-called “Murphy-Good (MG) plot”. Unlike a Fowler-Nordheim plot, which is theoretically predicted to be slightly curved, a Murphy-Good plot is predicted to be “almost exactly” straight. This presentation gives relevant theoretical formulas, and reports a comparison between these two plot types, based on the use of simulated data. It is confirmed that a MG plot can be used to apply an orthodoxy test. And it is illustrated that a MG plot gives results for extracted characterization parameters that are more precise than those extracted from a FN plot.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115353853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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