硅场发射极阵列的空间电荷限制输运

W. Chern, N. Karaulac, G. Rughoobur, A. Akinwande
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引用次数: 1

摘要

场发射阵列(FEAs)是应用于射频(RF)、离子和x射线源等应用的冷电子源。对于任何应用,电流密度都是最重要的,它是性能的主要指标。为了在给定电压下提供最佳的电流驱动,如何从几何上优化阳极的设计已经做了很少的工作。众所周知,热离子源服从一维Child-Langmuir空间电荷限制,这为几何设计提供了考虑。在这里,我们通过改变阴极/阳极距离来研究一维Child-Langmuir定律对Si FEAs的影响。我们报道了硅有限元在稍加修改后服从经典定律。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Space Charge Limited Transport in Si Field Emitter Arrays
Field emitter arrays (FEAs) are cold electron sources for applications such as radio frequency (RF), ion and xray sources. For any application, the current density is of utmost importance and it is the main figure of merit. Little work has been done to understand how to geometrically optimize the design of the anode in order to provide the optimal current drive for a given voltage. It is well-known that thermionic sources obey the 1D Child-Langmuir space charge limit which provides the geometrical design considerations. Here, we investigate the impact of the 1D Child-Langmuir law on Si FEAs by changing the cathode/anode distance. We report that Si FEAs obey the classical law with one slight modification.
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