{"title":"Luminescence of yttrium tantalate doubly activated with europium and terbium under x-ray and electron beam excitations","authors":"Nazarov Mihail, Zamoryanskaya Maria","doi":"10.53081/mjps.2022.21-1.01","DOIUrl":"https://doi.org/10.53081/mjps.2022.21-1.01","url":null,"abstract":"This paper reports the luminescence spectra of YTaO4 activated with rare-earth ions, such as Eu3+ and Tb3+. The effect of these rare-earth ions on the luminescence of yttrium tantalate phosphors is studied. The luminescent properties are studied under X-ray and electron beam excitations. It is found that, under these excitations, the emission centers of the rare-earth activators (Eu3+, Tb3+) efficiently contribute to the overall luminescence. Color cathodoluminescence images clearly show the dependence of chromaticity on the different activators. These rare-earth activated phosphors exhibiting various luminescence chromaticities are promising materials for optoelectronic applications and for X-ray intensifying screens in medical diagnosis, because they provide a broad variation of visible photoluminescence from blue to red.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115589947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Surface tension problem for micro- and nanowires","authors":"S. Baranov","doi":"10.53081/mjps.2022.21-1.08","DOIUrl":"https://doi.org/10.53081/mjps.2022.21-1.08","url":null,"abstract":"An analytical solution for the Gibbs–Tolman–Koenig–Buff equation for microwire and nanowire surfaces has been obtained. Analysis has been performed for a cylindrical surface in terms of the linear and nonlinear Van der Waals theory.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114478004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Rusu, V. Morari, T. Guțul, V. Ursaki, P. Vlăzan
{"title":"Hydrothermal preparation of oxide (Ga2O3, ZnO, TiO2) and derivative nanoparticles","authors":"E. Rusu, V. Morari, T. Guțul, V. Ursaki, P. Vlăzan","doi":"10.53081/mjps.2022.21-1.06","DOIUrl":"https://doi.org/10.53081/mjps.2022.21-1.06","url":null,"abstract":"A brief review of our recent research on preparation and characterization of oxide nanoparticles and their derivatives by hydrothermal growth is presented. A series of Ga2O3 , ZnO, and TiO2 nanoparticles, as well derivative nanomaterials including GaN nanowires and ZnO/TiO2 nanocompostes have been prepared. Ga2O3 and ZnO nanopowders have been produced using metal nitrate hydrates as precursors, while Titanium isopropoxide was used for preparation of TiO2 nanopowders. GaN nanowires have been produced by nitridation of Ga2O3 nanomaterials. The produced nanomaterials have been characterized scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Fourier transform infrared (FTIR) spectroscopy. Ga2O3 nanoparticles doped with Eu3+ ions have been characterized by photoluminescence spectroscopy in order to assess their prospects in developing nanophosphors materials.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125353475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Morari, V. Ursaki, L. Ghimpu, E. Rusu, I. Tiginyanu
{"title":"A study of wide band Zn1-xMgxO and (GaxIn1-x)2O3 thin films prepared by the spin coating method","authors":"V. Morari, V. Ursaki, L. Ghimpu, E. Rusu, I. Tiginyanu","doi":"10.53081/mjps.2022.21-1.02","DOIUrl":"https://doi.org/10.53081/mjps.2022.21-1.02","url":null,"abstract":"This study presents a brief analysis of Zn1-xMgxO and (GaxIn1-x)2O3 thin films deposited on Si substrates by the spin coating method. The morphology and chemical composition of the prepared thin films were studied by scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis. The evolution of the crystal structure with a change in the film composition and the technological conditions for annealing after spin coating was studied by X-ray diffraction (XRD) analysis. The annealing atmosphere and temperature were optimized in terms of producing films with a stoichiometric composition and a high crystalline quality.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121597682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Copper-related defects in ZnTe thin films grown by the close space sublimation method","authors":"I. Lungu, L. Ghimpu, Dumitru Untila, T. Potlog","doi":"10.53081/mjps.2022.21-1.03","DOIUrl":"https://doi.org/10.53081/mjps.2022.21-1.03","url":null,"abstract":"Low-temperature photoluminescence (PL) is used to study defects evolution via immersion technique and annealing in vacuum of ZnTe thin films. In this paper we studied how copper doping from solutions of different molar concentrations affects PL of ZnTe thin films grown by close space sublimation (CSS) method. Undoped ZnTe thin films showed PL emission in the (520-680) nm wavelength region. The incorporation of copper in ZnTe produce a number of broad emission bands that correspond to an electron transition from the conduction band to spin-orbit states of the localized level of Cu2+ ions. All the studied samples had variable concentrations of oxygen and the possibility of the formation of auxiliary oxides is discussed.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114916104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Nikolaeva, L. Konopko, T. Huber, I. Popov, G. Para
{"title":"Electron transport, transverse and longitudinal magnetoresistance, and Shubnikov–de Haas oscillations in Bi0.83Sb0.17 topological insulator semiconductor wires","authors":"A. Nikolaeva, L. Konopko, T. Huber, I. Popov, G. Para","doi":"10.53081/mjps.2022.21-1.05https://mjps.nanotech.md/archive/2022/article/202208","DOIUrl":"https://doi.org/10.53081/mjps.2022.21-1.05https://mjps.nanotech.md/archive/2022/article/202208","url":null,"abstract":"The paper describes results of experimental studies of the dependence of the resistance, transverse and longitudinal magnetoresistance, as well as the Shubnikov–de Haas (SdH) oscillations of Bi0.83Sb0.17 semiconductor single-crystal wires with diameters of (75–1100) nm, as a function of the thickness, in a temperature range of (3.1–300) K at magnetic fields of up to 14 T. The wires were prepared by liquid-phase casting. It has been found that the temperature dependences of the resistance of wires with d < 0.5 m have two regions exhibiting a semiconductor and a metallic behavior of the resistance, the two regions being separated by a maximum, which is shifted to the high-temperature region with a decrease in the wire diameter d. It has been revealed that the energy gap E increases by a factor of 2 with a decrease in wire diameter d, due to the occurrence of the quantum size effect. The “metallic” behavior of conductivity is attributed to surface states characteristic of topological insulators, which is most clearly evident in thin wires at temperatures of T < 50 K. It has been shown that, in the presence of a uniform magnetic field H, the field dependences of the longitudinal and transverse magnetoresistance in quasi-one-dimensional systems can undergo a significant change depending on the ratio of quantum wire radius to the magnetic length R = (ch/eH)1/2, as well as on the decrease in the mean free path of carriers due to scattering on the wire surface. The SdH oscillation periods exhibit anomalies that are typical neither to bulk Bi1xSbx samples nor to semimetallic wires based on Bi1xSbx alloys. This fact points to the essential role of surface states of topological insulators in 1D-systems, which lead to the occurrence of new effects that are not characteristic of other systems.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116738655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Nica, L. Pogorelischi, Serghei Zavrajnii, Valeriu Cebotari
{"title":"Generation of infrared radiation with modulated amplitude at terahertz frequencies","authors":"I. Nica, L. Pogorelischi, Serghei Zavrajnii, Valeriu Cebotari","doi":"10.53081/mjps.2022.21-1.07","DOIUrl":"https://doi.org/10.53081/mjps.2022.21-1.07","url":null,"abstract":"The role of infrared radiation in stimulating cellular metabolism can be dual. Firstly, the energy of light quanta is used by the cell instead of the energy of adenosine triphosphate hydrolysis. Secondly, light absorption cannot replace this hydrolysis. However, it can accelerate its rate and thus the productivity of metabolic reactions associated with it. This process is significantly enhanced by the use of terahertz modulation of infrared radiation, which is manifested, for example, in optically stimulated transport of ions through biological membranes. For therapeutic effects on the above-described processes in biological tissues, a device has been developed that generates infrared radiation with wavelengths in the range of maximum transparency of biological tissues modulated in amplitude in a frequency range of 1011–1012 Hz. The modulation of radiation has been produced by the method of interference.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126720481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Synthesis and electrophysical properties of CdS/ZnTe heterojunctions","authors":"I. Lungu, L. Ghimpu, Lyudmila Gagara, T. Potlog","doi":"10.53081/mjps.2022.21-1.04","DOIUrl":"https://doi.org/10.53081/mjps.2022.21-1.04","url":null,"abstract":"In this paper results of studying CdS/ZnTe heterostructures synthesized by the quasi-closed space sublimation method on glass substrates coated with an ITO layer are described. The electrical and photoelectric properties of the structures are studied using current–voltage and capacitance–voltage characteristics in a temperature range of 30–100 °C. Analysis of the experimental data shows that the main specific feature of CdS/ZnTe structures is the formation of a high-resistance transition layer, which affects the separation of carriers at the barrier contact. The current carrier concentration in the space charge region, which is determined from the capacitance–voltage characteristics, is 1 x 1015 cm-3; this fact suggests that one of the contacting materials—ZnTe—exhibits a high resistivity. Measurements of current–voltage characteristics in the solar cell mode give the following photoelectric parameters: open circuit voltage (UOC = 0.53 V, JSC = 27–30 A/cm2, and FF = 0.25.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115949461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Victor Suman, V. Morari, E. Rusu, L. Ghimpu, V. Ursaki
{"title":"Electrophysical properties of ITO:Ga2O3 films grown by rf magnetron sputtering","authors":"Victor Suman, V. Morari, E. Rusu, L. Ghimpu, V. Ursaki","doi":"10.53081/mjps.2021.20-2.05","DOIUrl":"https://doi.org/10.53081/mjps.2021.20-2.05","url":null,"abstract":"n this paper, the electrophysical properties of ITO:Ga2O3 thin films grown by RF magnetron sputtering on glass and sapphire substrates are studied. Targets prepared by mechanical pressing of ITO and Ga2O3 powders are used as an evaporation source. The electrophysical characteristics as a function of optimumfilm growth parameters—the correlation between the argon and oxygen flows, the substrate temperature, and the discharge power of the magnetron—are studied","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129575782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Nikolaeva, L. Konopko, T. Huber, I. Popov, P. Bodiul, G. Para
{"title":"Anisotropy and size effects in Bi1-xSbx semiconductor wires in a magnetic field","authors":"A. Nikolaeva, L. Konopko, T. Huber, I. Popov, P. Bodiul, G. Para","doi":"10.53081/mjps.2021.20-2.01","DOIUrl":"https://doi.org/10.53081/mjps.2021.20-2.01","url":null,"abstract":"The electron transport and longitudinal and transverse magnetoresistance (MR) of glass-insulated Bi0.92Sb0.08 single-crystal wires with diameters of 180 nm to 2.2 μm and the (1011) orientation along the wire axis have been studied. The wires have been prepared by liquid-phase casting. It has been first found that the energy gap ΔE increases by a factor of 4 with a decrease in wire diameter d due to the manifestation of the quantum size effect, which can occur under conditions of a linear energy–momentum dispersion law characteristic of both the gapless state and the surface states in topological insulators (TIs). It has been revealed that, in strong magnetic fields at low temperatures, a semiconductor–semimetal transition occurs, which is evident as an anomalous decrease in the transverse MR anisotropy and the appearance of a metallic temperature dependence of resistance at T < 100 K. It has been found that the effect of negative MR, the appearance of an anomalous maximum in the longitudinal MR, and the dependence of Hmax ~ d-1 at 4.2 K is a manifestation of the classical MacDonald–Chambers size effect. The calculated value of the component of the Fermi momentum perpendicular to the magnetic induction vector H is 2 times higher than the value for pure bismuth wires. The features of the manifestation of the quantum size effect in Bi0.92Sb0.08 wires, semiconductor–semimetal electronic transitions induced by a magnetic field, and a decrease in the transverse MR anisotropy indicate the occurrence of new effects in low-dimensional structures based on semiconductor wire TIs, which require new scientific approaches and applications.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124109909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}