{"title":"Atypical topological features of the Bi1-xSbx(0 ≤ x ≤ 0.2) nano-width bicrystaline boundaries","authors":"F. Muntyanu, V. Chistol, E. Condrea","doi":"10.53081/mjps.2021.20-2.02","DOIUrl":"https://doi.org/10.53081/mjps.2021.20-2.02","url":null,"abstract":"In this paper, we report a number of atypical features of superconductivity, weak ferromagnetism, and quantum transport observed at low temperatures at bicrystalline interfaces of the first predicted and experimentally realized three-dimensional topological insulator (3D TI) Bi1xSbx (0 ≤ x ≤ 0.2). Pure bicrystals and bicrystals slightly doped (≤0.01 at %) with Te (donor) and Sn (acceptor) impurities are used to fully satisfy the conditions of manifestation of transport quantum oscillations. These 3D TI interfaces exhibit fascinating quantum topological properties, which require extensive basic and applied research.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127119826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Transient photocurrent behavior in amorphous thin film heterostructures","authors":"O. Iaseniuc","doi":"10.53081/mjps.2021.20-2.07","DOIUrl":"https://doi.org/10.53081/mjps.2021.20-2.07","url":null,"abstract":"The characteristics of transient photocurrent in amorphous heterostructures Al-As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge0.30As0.04S0.66–Al in the case of the positive polarity of the applied voltage at the top illuminated Al electrode are presented and discussed in this paper. The complex structure of the spectral distribution of the stationary (Fig. 1) and the transient (Fig. 3) photocurrent characteristics can be assigned to the different values of the optical band gap Eg of the involved amorphous layers (about Eg ~ 2.0 eV for As0.40S0.30Se0.30 and Ge0.09As0.09Se0.82; about Eg ~ 3.0 eV for Ge0.30As0.04S0.66). It is found that the dependence of photocurrent on light intensity has a power-law behavior Ipc ~ Fα(1.0 ≤ α ≤ 0.5), which is characteristic of amorphous semiconductors with an exponential distribution of localized states in the band gap.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124066115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Birefringence, isotropic points, and optical filters based on CuGaxAl1-xSe(S)2 crystals","authors":"Alisa Maşnic, V. Ursaki","doi":"10.53081/mjps.2021.20-2.04","DOIUrl":"https://doi.org/10.53081/mjps.2021.20-2.04","url":null,"abstract":"A brief review on birefringence and optical filters based on CuGaxAl1-xS2 and CuGaxAl1-xSe2 crystals is given in this paper. Two types of isotropic points are analyzed; one of them refers to a case when the wavelength at which the ordinary and extraordinary refractive indices are equal is situated near the absorption edge, while in the second case the isotropic wavelength is in the region of crystal transparency. It is shown that both of them can be used for the development of band-pass and band-reject filters. The possibility of adjusting the spectral position of an isotropic point by changing the chemical composition of a solid solution is illustrated, and the applicability of CuGaxAl1-xS2 and CuGaxAl1-xSe2 for adjusting the isotropic point to most of Ar+, Kr+, He–Ne, and He–Cd gas lasers lines, as well as to semiconductor lasers, is revealed","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126399426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Muntyanu, K. Nenkov, Andrzej J. Zalesk, E. Condrea, V. Chistol
{"title":"Various manifestations of weak magnetism and superconductivity in inclination interfaces of Bi, Sb and Bi1-xSbx","authors":"F. Muntyanu, K. Nenkov, Andrzej J. Zalesk, E. Condrea, V. Chistol","doi":"10.53081/mjps.2021.20-2.03","DOIUrl":"https://doi.org/10.53081/mjps.2021.20-2.03","url":null,"abstract":"The magnetic properties of the nano-width bicrystal interfaces (CIs) of Bi, Sb and 3D topological insulator Bi1xSbx (0.06 ≤ x ≤ 0.2) are studied in a temperature range of 1.6–300 K. These materials do not show superconductivity under normal rhombohedral conditions and are anomalous diamagnetics. At the same time, two superconducting phases with Tc ≤ 21 K and magnetic hysteresis loops against a diamagnetic background typical for strong type II superconductors are identified in Bi interfaces. At the CIs of Bi1xSbx (0.06 ≤ x ≤ 0.2), as well as Sb, a superconducting transition and a ferromagnetic hysteresis loop or a dual loop (superimposed ferromagnetic and superconducting loops) against a paramagnetic background are observed; they indicate the simultaneous occurrence of superconductivity and weak ferromagnetism, which is specific to 3D topological insulators. The revealed coexistence of superconductivity and weak magnetism at these CIs is of significant interest for the fundamental physics and future applications in quantum computing and spintronic devices.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125189449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Invariant sample-and-hold amplifier to the hold capacitor discharge","authors":"A. Penin, A. Sidorenko","doi":"10.53081/mjps.2021.20-2.08","DOIUrl":"https://doi.org/10.53081/mjps.2021.20-2.08","url":null,"abstract":"The conventional measurement signal sample-and-hold amplifier comprising a sample and hold circuit in the form of a sample switch, a voltage hold capacitor, and a voltage repeater further includes two similar sample-and-hold circuits of reference voltages. The idea of the proposed amplifier is that hold capacitors are equally discharged in all three sample-and-hold circuits. Therefore, an affine ratio for the stored three voltage samples does not change the intrinsic value over a long discharge time. Then, this invariant affine ratio is taken as the measuring signal. A reproducing (recovery) unit, which is also included, calculates this affine ratio. In turn, the included information signal former shaper pre-converts (prepares) the initial measurement signal using reference voltages. Thus, the hold time is significantly increased, while maintaining a short sample time for the given hold capacitor. On the other hand, the affine ratio uses differences and voltage ratios. Therefore, offset errors are mutually reduced. It is possible to implement the proposed sample-and-hold amplifier in the form of an analog chip based on a multiplier and the known multi-channel sample-and-hold amplifier.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134258750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Cojocaru, L. Ghimpu, T. Fedorisin, R. Galus, Victor Suman
{"title":"Development of fuzzy system management for solar panel motion using an arduino microcontroller","authors":"V. Cojocaru, L. Ghimpu, T. Fedorisin, R. Galus, Victor Suman","doi":"10.53081/mjps.2021.20-2.09","DOIUrl":"https://doi.org/10.53081/mjps.2021.20-2.09","url":null,"abstract":"In this paper, the design of a system for the control of a solar panel motion by means of a servomotor based on an Arduino board is described. The system calculates optimum tracks and position of the sun to ensure that the solar panel is always directed to the sun in order to increase the amount of energy generated by the solar panel. The device makes use of four solar modules for detection and a servomotor to automatically rotate the solar panel to adjust it to the sun position","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125946997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effect of aging, temperature, and ambient gases on the complex impedance of As2Te13Ge8S3 glassy films","authors":"M. Ciobanu, D. Tsiulyanu","doi":"10.53081/mjps.2021.20-2.06","DOIUrl":"https://doi.org/10.53081/mjps.2021.20-2.06","url":null,"abstract":"The work is focused on the application of the impedance spectroscopy method to provide evidence and study the effects of aging, temperature, and gas adsorption in chalcogenide-based thin films. The experiments are carried out with thin films of glassy quaternary composition As2Te13Ge8S3 in a wide frequency range at different temperatures under different environmental conditions, in particular, either dry or wet air or their mixtures with NO2 or CO2. It is found that aging has a significant effect on the impedance spectra of Pt–As2Te13Ge8S3–Pt functional structures, which make evidence for the presence of substantial spatial and compositional disordering. This effect can be stabilized by the post-preparation annealing of the sample. The effect of temperature on impedance spectra consists in a variation in the both real and imaginary parts of impedance that appear to be extremely sensitive to adsorptive processes. Adsorption of nitrogen dioxide results in a significant frequency-dependent decrease in the impedance parameters, which is attributed to an effective “strong” chemisorption process due to the interaction of \"odd\" electrons of NO2 molecules with lone pair electrons of chalcogen atoms. The effect of water vapors leads only to an increase in the real part of impedance, while the imaginary part abruptly decreases; this fact is attributed to a “weak” form of chemisorption. The effect of carbon dioxide on the impedance spectra is attributed to the physical adsorption of CO2 molecules. This effect is weak; however, it is reversible and clearly observed even at room temperature.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130092831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"MODELING OF A NANOCYLINDER","authors":"S. Baranov","doi":"10.53081/MJPS.2021.20-1.03","DOIUrl":"https://doi.org/10.53081/MJPS.2021.20-1.03","url":null,"abstract":"The results of the theory of modeling for obtaining nanocylinders have been described. A case of a nanocylinder whose diameters are shorter than the Tolman length has been considered. This important issue is taken into account in studying a nanocylinder for which, in the simplest model, the thickness of the interfacial layer cannot be determined because it supposedly has a small size. At the same time, it has been shown that the introduction of a special form of anisotropy energy makes it possible to analytically describe the origin of an interfacial layer whose sizes can be regarded as sizes comparable to the Tolman length.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129833644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Iovu, V. Verlan, I. Culeac, O. Bordian, V. Zubareva, I. Bulhac, M. Enăchescu, N. Siminel, A. Siminel
{"title":"COORDINATION COMPLEX [Eu(μ 2 -OC 2 H 5 )(btfa)(NO 3 ) (phen)] 2 ·phen WITH HIGH LUMINESCENT EFFICIENCY","authors":"M. Iovu, V. Verlan, I. Culeac, O. Bordian, V. Zubareva, I. Bulhac, M. Enăchescu, N. Siminel, A. Siminel","doi":"10.53081/MJPS.2021.20-1.06","DOIUrl":"https://doi.org/10.53081/MJPS.2021.20-1.06","url":null,"abstract":"Experimental results on the bis[(μ 2 -etoxi)(benzoyl trifluoroacetonato)(nitrato)(1,10- phenantroline)europium(III)]1,10-phenantroline europium(III) coordination complex (hereafter, [Eu(μ 2 -OC 2 H 5 )(btfa)(NO 3 )(phen)] 2 ·phen) are described. The complex is characterized by photoluminescence (PL) and infrared spectroscopy. Photoluminescence spectra of the complex exhibit strong emission with specific narrow emission bands associated with the 5 D 0 → 7 F j (j = 0–4) transitions. The pattern of emission band splitting and the luminescence time decay suggest the presence of at least two different sites of the Eu 3+ ion in a low-symmetry environment. The absolute PL quantum yield of the complex is determined to be 49.2%.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124099066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"FABRICATION OF p-NiO/n-ZnO:Ga HETEROSTRUCTURES FOR A RECTIFIER DIODE AND A UV PHOTODETECTOR VIA RF MAGNETRON SPUTTERING AND SPRAY PYROLYSIS SYNTHESIS","authors":"L. Ghimpu, Victor Suman, D. Rusnac, T. Potlog","doi":"10.53081/MJPS.2021.20-1.05","DOIUrl":"https://doi.org/10.53081/MJPS.2021.20-1.05","url":null,"abstract":"In this paper, a p–n thin film NiO/ZnO heterojunction for a rectifier diode and a UV photodetector is prepared and characterized. Nickel oxide (NiO) and gallium-doped zinc oxide (ZnO:Ga) thin films are grown by RF magnetron sputtering and spray pyrolysis techniques, respectively. The crystal structure of the thin films is studied by the X-ray diffraction (XRD) method. The transmittance and reflectance are studied by UV–VIS spectroscopy. The p–n electrical parameters are estimated from current–voltage characteristics. The effects of duration of thermal annealing at 450 o C on the characteristics of the NiO/ZnO:Ga device are evaluated. The non-annealed diode shows the best rectification coefficient of 10 5 at ±1 V. The p–n photodetection capability is studied under UV illumination. At a reverse bias of –3 V under 365-nm UV illumination, the device shows a current intensity of ~6.2 × 10 12 A. The observed increase in the reverse current intensity by about two orders of magnitude under a UV lamp with a spectral irradiance of 10 W m 2 m 1 indicates a promising application in UV light detection.","PeriodicalId":291924,"journal":{"name":"The Moldavian Journal of the Physical Sciences","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129100517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}