Synthesis and electrophysical properties of CdS/ZnTe heterojunctions

In this paper results of studying CdS/ZnTe heterostructures synthesized by the quasi-closed space sublimation method on glass substrates coated with an ITO layer are described. The electrical and photoelectric properties of the structures are studied using current–voltage and capacitance–voltage characteristics in a temperature range of 30–100 °C. Analysis of the experimental data shows that the main specific feature of CdS/ZnTe structures is the formation of a high-resistance transition layer, which affects the separation of carriers at the barrier contact. The current carrier concentration in the space charge region, which is determined from the capacitance–voltage characteristics, is 1 x 1015 cm-3; this fact suggests that one of the contacting materials—ZnTe—exhibits a high resistivity. Measurements of current–voltage characteristics in the solar cell mode give the following photoelectric parameters: open circuit voltage (UOC = 0.53 V, JSC = 27–30 A/cm2, and FF = 0.25.