射频磁控溅射生长ITO:Ga2O3薄膜的电物理特性

The Moldavian Journal of the Physical Sciences Pub Date : 2022-01-01 DOI:10.53081/mjps.2021.20-2.05

Victor Suman, V. Morari, E. Rusu, L. Ghimpu, V. Ursaki

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摘要

本文研究了在玻璃和蓝宝石衬底上射频磁控溅射生长ITO:Ga2O3薄膜的电物理性能。用机械压制ITO和Ga2O3粉末制备靶材作为蒸发源。研究了最佳薄膜生长参数(氩气和氧气流量、衬底温度和磁控管放电功率之间的关系)对电物理特性的影响

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Electrophysical properties of ITO:Ga2O3 films grown by rf magnetron sputtering

n this paper, the electrophysical properties of ITO:Ga2O3 thin films grown by RF magnetron sputtering on glass and sapphire substrates are studied. Targets prepared by mechanical pressing of ITO and Ga2O3 powders are used as an evaporation source. The electrophysical characteristics as a function of optimumfilm growth parameters—the correlation between the argon and oxygen flows, the substrate temperature, and the discharge power of the magnetron—are studied

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The Moldavian Journal of the Physical Sciences

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