2017 IEEE Workshop on Microelectronics and Electron Devices (WMED)最新文献

Adjoint Method to Optimize Power Transistors 功率晶体管优化的伴随法

2017 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2017-04-21 DOI: 10.1109/WMED.2017.7916923

Chen Zhu, P. Andrei

引用次数: 0

New Silicon Frontiers: Physically Flexible System-On-A-Chip 新的硅前沿:物理柔性单片系统

2017 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2017-04-21 DOI: 10.1109/WMED.2017.7916930

Richard L. Chaney, Dale G. Wilson, D. Hackler, K. DeGregorio, Darrell E. Leber

引用次数: 1

Electrical characteristics of nanocrystalline silicon resistive memory devices 纳米晶硅电阻性存储器件的电学特性

2017 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2017-04-21 DOI: 10.1109/WMED.2017.7916927

Sumedha Gandharava, Catherine N. Walker, K. D. Cantley

{"title":"Electrical characteristics of nanocrystalline silicon resistive memory devices","authors":"Sumedha Gandharava, Catherine N. Walker, K. D. Cantley","doi":"10.1109/WMED.2017.7916927","DOIUrl":"https://doi.org/10.1109/WMED.2017.7916927","url":null,"abstract":"Resistive memory devices have been studied and fabricated using a wide variety of materials including chalcogenides, metal oxides, and hydrogenated amorphous silicon (a-Si:H). The most promising materials seem to be amorphous in nature, with the properties of the atomic lattices being conducive to the physical mechanisms that underlie the subsequent resistive switching. The devices are also finding applications beyond high-density digital memory, such as for electronic synapses in neuromorphic systems. However, a different set of properties is required in the latter case compared to devices that must only store binary values. In addition, it is well known that biological synapses are extremely unreliable and noisy, and yet the brain is still able to perform high-level cognitive functions. This work uses pulse-based electrical characterization techniques to demonstrate the stochastic nature of resistive switching in nanocrystalline silicon (nc-Si) Conductive Bridge Resistive Memory (CBRAM) Devices. We chose nc-Si active layers so these devices could potentially be co-fabricated in the same process as nc-Si TFTs. Our subsequent findings indicate the device properties may be particularly useful for some non-von Neumann computing paradigms. Though much research has been done using a-Si:H, results from nc-Si CBRAM devices have not been published. In this study, we showed that the switching of the device depends on the history of current passing though it, and not only the voltage applied. Further, the resistance switching in the devices is stochastic, making them ideal candidates for a biologically realistic synapse.","PeriodicalId":287760,"journal":{"name":"2017 IEEE Workshop on Microelectronics and Electron Devices (WMED)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133070090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 150Ghz High Gain Amplifier Based on over Neutralization Technique and Marchand Balun Matching Networks in 65nm CMOS 基于过中和技术和Marchand Balun匹配网络的65纳米CMOS 150Ghz高增益放大器

2017 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2017-04-21 DOI: 10.1109/WMED.2017.7916921

Yuan Chen, Lei Zhang, Yan Wang

引用次数: 1

Development of a scanning tunneling microscope for the carrier profiling of semiconductors by scanning frequency comb microscopy 用扫描频率梳状显微镜研究半导体载流子谱的扫描隧道显微镜的研制

2017 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2017-04-21 DOI: 10.1109/WMED.2017.7916926

Greg Spencer, M. Hagmann

引用次数: 0

A Coding Scheme for Nucleic Acid Memory (NAM) 一种核酸记忆编码方案

2017 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2017-04-01 DOI: 10.1109/WMED.2017.7916922

Kelsey Suyehira, Simon Llewellyn, Reza M Zadegan, W. Hughes, Tim Andersen

引用次数: 3

Simulation of the Frequency Comb Induced by a Periodically Excited Tunnel Junction in Silicon 硅中周期性激发隧道结诱发频率梳的模拟

2017 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2017-04-01 DOI: 10.1109/WMED.2017.7916934

Chen Zhu, P. Andrei, M. Hagmann

引用次数: 0

Polyoxometalate Hybrid Nano-Building Blocks for Extreme Ultra-Violet Photoresists 多金属氧酸盐杂化纳米基块用于极紫外光抗蚀剂

2017 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2017-04-01 DOI: 10.1109/WMED.2017.7916932

Brandon Hardie, M. Roll

引用次数: 0

Possibility of carrier profiling semiconductors by terahertz spectroscopy with terahertz radiation generated in a scanning tunneling microscope 利用扫描隧道显微镜中产生的太赫兹辐射，利用太赫兹光谱分析载流子谱的可能性

2017 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2017-04-01 DOI: 10.1109/WMED.2017.7916933

Dmitrij G. Coombs, M. Hagmann

{"title":"Possibility of carrier profiling semiconductors by terahertz spectroscopy with terahertz radiation generated in a scanning tunneling microscope","authors":"Dmitrij G. Coombs, M. Hagmann","doi":"10.1109/WMED.2017.7916933","DOIUrl":"https://doi.org/10.1109/WMED.2017.7916933","url":null,"abstract":"A mode-locked ultrafast laser focused on the tunneling junction of a scanning tunneling microscope (STM) superimposes harmonics of the laser pulse repetition frequency on the DC tunneling current. The power measured at each of the first 200 harmonics (up to 15 GHz) varies inversely as the square of the frequency due to stray capacitance shunting the tunneling junction. Fourier analysis suggests that in the tunneling junction the harmonics have no significant decay up to a frequency of 1/2τ ≈ 33 THz where τ = 15 fs, the laser pulse width. Two different analyses will be presented to model the generation of the frequency comb within the tunneling junction. The first is based on the observed current-voltage characteristics for the nanoscale tunneling junction. The second is a solution of the time-dependent Schrödinger equation for a modulated barrier. Both analyses indicate that optical rectification of the pulsed laser radiation in the tunneling junction causes harmonics of the pulse repetition frequency of the laser and that these harmonics may extend to terahertz frequencies. It appears that the tunneling junction may be used as a sub-nm sized source of terahertz radiation. Transmission and back scattering could not be used but loading of this source by the finite conductivity of the semiconductor would cause a loss varying inversely with the carrier density. Carrier dynamics could be measured by time-domain measurements, and time-averaged carrier profiling, but presumably with finer resolution due to the sub-nm size of the terahertz source.","PeriodicalId":287760,"journal":{"name":"2017 IEEE Workshop on Microelectronics and Electron Devices (WMED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114827846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Increased versatility for carrier profiling of semiconductors by scanning frequency comb microscopy (SFCM) 通过扫描频率梳状显微镜(SFCM)增加半导体载流子分析的通用性

2017 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2017-04-01 DOI: 10.1109/WMED.2017.7916928

T. Birch, M. Hagmann

{"title":"Increased versatility for carrier profiling of semiconductors by scanning frequency comb microscopy (SFCM)","authors":"T. Birch, M. Hagmann","doi":"10.1109/WMED.2017.7916928","DOIUrl":"https://doi.org/10.1109/WMED.2017.7916928","url":null,"abstract":"We are developing a new method for the carrier profiling of semiconductors that shows promise for nm-resolution which is required at the new sub-10 nm lithography nodes. A modelocked ultrafast laser focused on the tunneling junction of a scanning tunneling microscope (STM) generates a regular sequence of pulses of minority carriers in the semiconductor. Each pulse of carriers has a width equal to the laser pulse width (e.g. 15 fs). In the frequency domain, this is a microwave frequency comb (MFC) with hundreds of measurable harmonics at integer multiples of the laser pulse repetition frequency (e.g. 74 MHz). After the minority carriers diverge rapidly into the semiconductor as a Coulomb explosion, the pulses become broader and decay, so that the MFC has less power with a spectrum limited to the first few harmonics. The frequency-dependent attenuation of the MFC is determined by the resistivity of the semiconductor at the tunneling junction so SFCM is closely related to Scanning Spreading Resistance Microscopy (SSRM). Harmonics of the MFC are measured with high speed, and high accuracy because the signal-to-noise ratio is approximately 25 dB due to their extremely narrow (sub-Hz) linewidth. Now we superimpose a low-frequency signal (e.g. 10 Hz) on either the applied bias or the voltage that is applied to the piezoelectric actuators of the STM to cause sidebands at each harmonic of the MFC which are less affected by the artifacts.","PeriodicalId":287760,"journal":{"name":"2017 IEEE Workshop on Microelectronics and Electron Devices (WMED)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124104784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0