{"title":"基于过中和技术和Marchand Balun匹配网络的65纳米CMOS 150Ghz高增益放大器","authors":"Yuan Chen, Lei Zhang, Yan Wang","doi":"10.1109/WMED.2017.7916921","DOIUrl":null,"url":null,"abstract":"This paper presents a 150GHz fully differential amplifier with gain boosting and optimized Marchand balun matching networks in a 65nm CMOS technology. The optimized Marchand balun overcomes the self- resonance problem that the conventional balun suffers, and reduces the size as well. The over- neutralization technique is proposed and utilized in order to boost the gain of a differential pair without extra penalty on power consumption. A four- stage amplifier achieves a maximum gain of 19.2dB at 150GHz with a 3dB bandwidth of 14GHz, while consuming 48mW of power from a 1.2V supply.","PeriodicalId":287760,"journal":{"name":"2017 IEEE Workshop on Microelectronics and Electron Devices (WMED)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 150Ghz High Gain Amplifier Based on over Neutralization Technique and Marchand Balun Matching Networks in 65nm CMOS\",\"authors\":\"Yuan Chen, Lei Zhang, Yan Wang\",\"doi\":\"10.1109/WMED.2017.7916921\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 150GHz fully differential amplifier with gain boosting and optimized Marchand balun matching networks in a 65nm CMOS technology. The optimized Marchand balun overcomes the self- resonance problem that the conventional balun suffers, and reduces the size as well. The over- neutralization technique is proposed and utilized in order to boost the gain of a differential pair without extra penalty on power consumption. A four- stage amplifier achieves a maximum gain of 19.2dB at 150GHz with a 3dB bandwidth of 14GHz, while consuming 48mW of power from a 1.2V supply.\",\"PeriodicalId\":287760,\"journal\":{\"name\":\"2017 IEEE Workshop on Microelectronics and Electron Devices (WMED)\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Workshop on Microelectronics and Electron Devices (WMED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WMED.2017.7916921\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Workshop on Microelectronics and Electron Devices (WMED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMED.2017.7916921","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 150Ghz High Gain Amplifier Based on over Neutralization Technique and Marchand Balun Matching Networks in 65nm CMOS
This paper presents a 150GHz fully differential amplifier with gain boosting and optimized Marchand balun matching networks in a 65nm CMOS technology. The optimized Marchand balun overcomes the self- resonance problem that the conventional balun suffers, and reduces the size as well. The over- neutralization technique is proposed and utilized in order to boost the gain of a differential pair without extra penalty on power consumption. A four- stage amplifier achieves a maximum gain of 19.2dB at 150GHz with a 3dB bandwidth of 14GHz, while consuming 48mW of power from a 1.2V supply.
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