{"title":"Development of a scanning tunneling microscope for the carrier profiling of semiconductors by scanning frequency comb microscopy","authors":"Greg Spencer, M. Hagmann","doi":"10.1109/WMED.2017.7916926","DOIUrl":null,"url":null,"abstract":"Summary form only given. We are developing a scanning tunneling microscope that is portable and optimized for scanning frequency comb microscopy (SFCM) as one part of our effort to complete a prototype for the carrier profiling of semiconductors by SFCM. Conventional integral or integral plus proportion feedback control of the tunneling current in a scanning tunneling microscope (STM) is satisfactory once tunneling has been established but may cause tip-crash by integral windup during coarse approach. In tip-sample contact images with atomic-resolution may be obtained but the microwave frequency comb ceases because there is no optical rectification and scanning tunneling spectroscopy also fails. We are studying a new control algorithm based on approximating the tunneling current as a polynomial in the bias voltage where the coefficients in this polynomial are not required. It is noted that hanges in the apparatus, as well as the algorithms used for feedback control in the STM, are required to optimize this instrument for measuring the microwave frequency comb.","PeriodicalId":287760,"journal":{"name":"2017 IEEE Workshop on Microelectronics and Electron Devices (WMED)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Workshop on Microelectronics and Electron Devices (WMED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMED.2017.7916926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only given. We are developing a scanning tunneling microscope that is portable and optimized for scanning frequency comb microscopy (SFCM) as one part of our effort to complete a prototype for the carrier profiling of semiconductors by SFCM. Conventional integral or integral plus proportion feedback control of the tunneling current in a scanning tunneling microscope (STM) is satisfactory once tunneling has been established but may cause tip-crash by integral windup during coarse approach. In tip-sample contact images with atomic-resolution may be obtained but the microwave frequency comb ceases because there is no optical rectification and scanning tunneling spectroscopy also fails. We are studying a new control algorithm based on approximating the tunneling current as a polynomial in the bias voltage where the coefficients in this polynomial are not required. It is noted that hanges in the apparatus, as well as the algorithms used for feedback control in the STM, are required to optimize this instrument for measuring the microwave frequency comb.