European Mask and Lithography Conference最新文献

{"title":"CK-MASK semi-manual tool for mask inspection and blowing","authors":"A. Leserri, F. Ferrario, U. Iessi, A. Gusmini","doi":"10.1117/12.2326607","DOIUrl":"https://doi.org/10.1117/12.2326607","url":null,"abstract":"Photolithography masks require a periodical inspection and cleaning. The visual inspection is often paired with a mask air blowing to remove eye visible particles. If these steps are run manually they are really critical for mask integrity in terms of contaminations, scratches, fingerprints, pellicle damage... All these potential issues arise during the mask certification process causing mask repelliculization, and, in the worst case, mask scrap with drawbacks linked to production aspects: quality (repetitive defects), cost (mask repels/remake), production lots on hold, non-linear production WIP and non-respect of production commitments. AG8-AGM photolithography engineering team in collaboration with “Gusmini attrezzature industriali” developed a tool called “CK-MASK” able to handle 6” masks and to reduce the risks connected to masks inspection and blowing.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133171668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance validation of Mapper FLX-1200","authors":"J. Pradelles, Y. Blancquaert, S. Landis, L. Pain, G. Rademaker, I. Servin, G. de Boer, P. Brandt, M. Dansberg, R. Jager, J. Peijster, E. Slot, S. Steenbrink, M. Wieland","doi":"10.1117/12.2324054","DOIUrl":"https://doi.org/10.1117/12.2324054","url":null,"abstract":"Operating maskless, massively parallel electron beam direct write (MEBDW) is an attractive alternative to optical lithography in micro and nano device manufacturing. Mapper Lithography develops MEBDW tools able to pattern wafers, for application nodes down to 28nm, with a throughput around one wafer per hour. A prototype tool from this series, named FLX-1200, is installed in the CEA-Leti clean room. This paper reviews the current performances of this prototype and the methodology used to measure them. On standardized exposure, consisting of 100 fields of 5×5mm2 exposed, in less than one hour, on 300mm silicon wafers, we obtained CD uniformity below 10nm (3σ) and LWR of 4.5nm for 60nm half pitch dense lines. We also demonstrate capability of 15nm and 25nm (3σ) for stitching and overlay errors respectively.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"212 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116112532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine learning for fab automated diagnostics","authors":"Manuel Giollo, A. Lam, D. Gkorou, Xing Lan Liu, Richard J. F. van Haren","doi":"10.1117/12.2280257","DOIUrl":"https://doi.org/10.1117/12.2280257","url":null,"abstract":"Process optimization depends largely on field engineer’s knowledge and expertise. However, this practice turns out to be less sustainable due to the fab complexity which is continuously increasing in order to support the extreme miniaturization of Integrated Circuits. On the one hand, process optimization and root cause analysis of tools is necessary for a smooth fab operation. On the other hand, the growth in number of wafer processing steps is adding a considerable new source of noise which may have a significant impact at the nanometer scale. This paper explores the ability of historical process data and Machine Learning to support field engineers in production analysis and monitoring. We implement an automated workflow in order to analyze a large volume of information, and build a predictive model of overlay variation. The proposed workflow addresses significant problems that are typical in fab production, like missing measurements, small number of samples, confounding effects due to heterogeneity of data, and subpopulation effects. We evaluate the proposed workflow on a real usecase and we show that it is able to predict overlay excursions observed in Integrated Circuits manufacturing. The chosen design focuses on linear and interpretable models of the wafer history, which highlight the process steps that are causing defective products. This is a fundamental feature for diagnostics, as it supports process engineers in the continuous improvement of the production line.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"227 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131647671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Latest developments on EUV reticle and pellicle research and technology at TNO","authors":"R. Verberk, N. Koster, E. te Sligte, Wilbert Staring","doi":"10.1117/12.2279672","DOIUrl":"https://doi.org/10.1117/12.2279672","url":null,"abstract":"At TNO an extensive EUV optics life time program has been running for over 15 years together with our partners ASML and Carl Zeiss. This has contributed to the upcoming introduction of EUV High Volume Manufacturing (HVM). To further help the industry with the introduction of EUV, TNO has worked on extending their facilities with a number of reticle and pellicle research infrastructure facilities. In this paper we will show some of the facilities that are available at TNO and shortly introduce their capabilities. Recently we have opened our EBL2 facility, which is an EUV Beam Line (EBL2) meant for studying the effects of high power EUV illumination on optics, reticles and pellicles up to the power roadmap of 500 W at intermediate Focus (IF). This facility is open to users from all over the world and is beneficial for the industry in helping developing alternative capping layers and contamination control strategies for optics lifetime, new absorber materials, pellicles and resists. The EBL2 system has seen first light in December 2016 and is now in the final stage of acceptance testing and qualification. It is expected that the system will be fully operational in the third quarter of 2017, and available for users. It is possible to transfer reticles to and from the EBL2 by means of the reticle handler using the dual pod interface. This secures backside cleanliness to NXE standards and thus enables wafer printing on a NXE tool in a later stage after the exposures and inspection at EBL2. Besides EBL2, a high performance and ultra-clean reticle handler is available at TNO. This handler incorporates our particle scanner Rapid Nano 4 for front side inspection of reticle blanks with a detection limit down to 20 nm particles. Attached to the handler is also an Optical Coherence Tomography (OCT) inspection tool for back-side reticle or pellicle inspection with a resolution down to 1 micron.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122102227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ILT optimization of EUV masks for sub-7nm lithography","authors":"Kevin Hooker, Bernd Kuechler, A. Kazarian, G. Xiao, K. Lucas","doi":"10.1117/12.2279912","DOIUrl":"https://doi.org/10.1117/12.2279912","url":null,"abstract":"The 5nm and 7nm technology nodes will continue recent scaling trends and will deliver significantly smaller minimum features, standard cell areas and SRAM cell areas vs. the 10nm node. There are tremendous economic pressures to shrink each subsequent technology, though in a cost-effective and performance enhancing manner. IC manufacturers are eagerly awaiting EUV so that they can more aggressively shrink their technology than they could by using complicated MPT. The current 0.33NA EUV tools and processes also have their patterning limitations. EUV scanner lenses, scanner sources, masks and resists are all relatively immature compared to the current lithography manufacturing baseline of 193i. For example, lens aberrations are currently several times larger (as a function of wavelength) in EUV scanners than for 193i scanners. Robustly patterning 16nm L/S fully random logic metal patterns and 40nm pitch random logic rectangular contacts with 0.33NA EUV are tough challenges that will benefit from advanced OPC/RET. For example, if an IC manufacturer can push single exposure device layer resolution 10% tighter using improved ILT to avoid using DPT, there will be a significant cost and process complexity benefit to doing so. ILT is well known to have considerable benefits in finding flexible 193i mask pattern solutions to improve process window, improve 2D CD control, improve resolution in low K1 lithography regime and help to delay the introduction of DPT. However, ILT has not previously been applied to EUV lithography. In this paper, we report on new developments which extend ILT method to EUV lithography and we characterize the benefits seen vs. traditional EUV OPC/RET methods.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128368116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Half circle chrome loss by electrochemical effects","authors":"D. Caspary, S. Jähne, P. Nesládek, M. Kristlib, L. Bahrig, A. Feicke, M. Kaiser, J. Lorbeer, T. Wandel","doi":"10.1117/12.2279699","DOIUrl":"https://doi.org/10.1117/12.2279699","url":null,"abstract":"For certain designs, we observe a rather peculiar defect during phase-shift mask production. At distinct positions on the mask, the chrome disappears within the second level process in almost perfect half circles. This effect can even be observed if no etching is applied at all. The root cause of this defect is electrochemical dissolving of chrome in DI water during the development rinse process, which appears at locations where the chrome is in contact to the developer rinse medium. In this publication we describe the experimental set-up to investigate the root cause mechanism and propose solutions to overcome the effect.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123235869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aerial image metrology for OPC modeling and mask qualification","authors":"Ao Chen, Y. Foong, T. Thaler, U. Buttgereit, Angeline Chung, Andrew Burbine, J. Sturtevant, C. Clifford, K. Adam, P. de Bisschop","doi":"10.1117/12.2281886","DOIUrl":"https://doi.org/10.1117/12.2281886","url":null,"abstract":"As nodes become smaller and smaller, the OPC applied to enable these nodes becomes more and more sophisticated. This trend peaks today in curve-linear OPC approaches that are currently starting to appear on the roadmap. With this sophistication of OPC, the mask pattern complexity increases. CD-SEM based mask qualification strategies as they are used today are starting to struggle to provide a precise forecast of the printing behavior of a mask on wafer. An aerial image CD measurement performed on ZEISS Wafer-Level CD system (WLCD) is a complementary approach to mask CD-SEMs to judge the lithographical performance of the mask and its critical production features. The advantage of the aerial image is that it includes all optical effects of the mask such as OPC, SRAF, 3D mask effects, once the image is taken under scanner equivalent illumination conditions. Additionally, it reduces the feature complexity and analyzes the printing relevant CD.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134496773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced metrology by offline SEM data processing","authors":"A. Lakcher, L. Schneider, B. Le-Gratiet, J. Ducoté, V. Farys, M. Besacier","doi":"10.1117/12.2280096","DOIUrl":"https://doi.org/10.1117/12.2280096","url":null,"abstract":"Today’s technology nodes contain more and more complex designs bringing increasing challenges to chip manufacturing process steps. It is necessary to have an efficient metrology to assess process variability of these complex patterns and thus extract relevant data to generate process aware design rules and to improve OPC models. Today process variability is mostly addressed through the analysis of in-line monitoring features which are often designed to support robust measurements and as a consequence are not always very representative of critical design rules. CD-SEM is the main CD metrology technique used in chip manufacturing process but it is challenged when it comes to measure metrics like tip to tip, tip to line, areas or necking in high quantity and with robustness. CD-SEM images contain a lot of information that is not always used in metrology. Suppliers have provided tools that allow engineers to extract the SEM contours of their features and to convert them into a GDS. Contours can be seen as the signature of the shape as it contains all the dimensional data. Thus the methodology is to use the CD-SEM to take high quality images then generate SEM contours and create a data base out of them. Contours are used to feed an offline metrology tool that will process them to extract different metrics. It was shown in two previous papers that it is possible to perform complex measurements on hotspots at different process steps (lithography, etch, copper CMP) by using SEM contours with an in-house offline metrology tool. In the current paper, the methodology presented previously will be expanded to improve its robustness and combined with the use of phylogeny to classify the SEM images according to their geometrical proximities.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134065199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SEM AutoAnalysis: enhancing photomask and NIL defect disposition and review","authors":"K. Schulz, K. Egodage, Gilles Tabbone, C. Ehrlich, A. Garetto","doi":"10.1117/12.2280828","DOIUrl":"https://doi.org/10.1117/12.2280828","url":null,"abstract":"For defect disposition and repair verification regarding printability, AIMS™ is the state of the art measurement tool in industry. With its unique capability of capturing aerial images of photomasks it is the one method that comes closest to emulating the printing behaviour of a scanner. However for nanoimprint lithography (NIL) templates aerial images cannot be applied to evaluate the success of a repair process. Hence, for NIL defect dispositioning scanning, electron microscopy (SEM) imaging is the method of choice. In addition, it has been a standard imaging method for further root cause analysis of defects and defect review on optical photomasks which enables 2D or even 3D mask profiling at high resolutions. In recent years a trend observed in mask shops has been the automation of processes that traditionally were driven by operators. This of course has brought many advantages one of which is freeing cost intensive labour from conducting repetitive and tedious work. Furthermore, it reduces variability in processes due to different operator skill and experience levels which at the end contributes to eliminating the human factor. Taking these factors into consideration, one of the software based solutions available under the FAVOR® brand to support customer needs is the aerial image evaluation software, AIMS™ AutoAnalysis (AAA). It provides fully automated analysis of AIMS™ images and runs in parallel to measurements. This is enabled by its direct connection and communication with the AIMS™tools. As one of many positive outcomes, generating automated result reports is facilitated, standardizing the mask manufacturing workflow. Today, AAA has been successfully introduced into production at multiple customers and is supporting the workflow as described above. These trends indeed have triggered the demand for similar automation with respect to SEM measurements leading to the development of SEM AutoAnalysis (SAA). It aims towards a fully automated SEM image evaluation process utilizing a completely different algorithm due to the different nature of SEM images and aerial images. Both AAA and SAA are the building blocks towards an image evaluation suite in the mask shop industry.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"970 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132686668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Challenges of nanostructure-integration in Fabry-Pérot interferometers as alternative to Bragg reflectors: an example for Match 1:1-, eBeam-, and nanoimprint lithography","authors":"C. Helke, K. Hiller, J. Erben, D. Reuter, M. Meinig, S. Kurth, C. Nowak, Herbert Kleinjans, T. Otto","doi":"10.1117/12.2279603","DOIUrl":"https://doi.org/10.1117/12.2279603","url":null,"abstract":"We present nanostructured reflectors as alternative for well-known alternating layer stack reflectors for Fabry-Pérot Interferometers (FPI) for the use in miniaturized spectrometry systems. The addressed FPI is part of an online monitoring system for specific molecules by Surface Enhanced Raman Spectroscopy (SERS). Key part is the tunable FPI with nanostructured reflectors, which is fabricated with MEMS and NEMS technologies. Nanostructured Photonic Crystal (PhC) and Sub-Wavelength Grating (SWG) reflectors are developed. The PhC reflectors consisting of 400 nm thin moveable LP-CVD Si3N4 membranes with nanostructured holes realize an aperture of 1 mm with high reflectivity in the VIS range. The SWG reflectors are realized as nanostructured aluminum polygons on 150 nm thin LP-CVD Si3N4 membranes. The challenge in manufacturing of the PhC and SWG structures on 50 μm thin predefined silicon membrane areas is the thin wafer handling, because they are very fragile and tend to warp under their own weight. Further challenges such as delamination of the NIL-stamp from the wafer and eBeam resist homogeneity on the deflected thin silicon membranes for nanostructure replication as well as residual free resist layers for the followed RIE process and the match of the used Nanoimprint, 1:1 and eBeam lithography processes for the different layers have to be considered. The manufacturing and characterization of both alternative reflectors for prospective integration in VIS-FPIs on 6\" wafers is described.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114404739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}