先进的计量通过离线扫描电镜数据处理

A. Lakcher, L. Schneider, B. Le-Gratiet, J. Ducoté, V. Farys, M. Besacier
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引用次数: 7

摘要

当今的技术节点包含越来越复杂的设计,给芯片制造工艺步骤带来越来越大的挑战。有必要有一个有效的计量来评估这些复杂模式的过程可变性,从而提取相关数据来生成过程感知设计规则和改进OPC模型。今天,过程可变性主要是通过对在线监控特征的分析来解决的,这些特征通常是为了支持可靠的测量而设计的,因此并不总是很能代表关键的设计规则。CD- sem是芯片制造过程中使用的主要CD测量技术,但在测量尖端到尖端、尖端到直线、面积或颈缩等高数量和鲁棒性方面面临挑战。CD-SEM图像包含了很多在计量中不常用的信息。供应商提供的工具允许工程师提取其特征的SEM轮廓,并将其转换为GDS。轮廓可以看作是形状的签名,因为它包含了所有的维度数据。因此,方法是使用CD-SEM拍摄高质量的图像,然后生成SEM轮廓并从中创建数据库。轮廓线用于馈送离线计量工具,该工具将处理它们以提取不同的度量。在之前的两篇论文中显示,通过使用内部离线计量工具的SEM轮廓,可以在不同工艺步骤(光刻,蚀刻,铜CMP)的热点上执行复杂的测量。在当前的论文中,将扩展先前提出的方法,以提高其鲁棒性,并结合使用系统发育根据其几何接近度对SEM图像进行分类。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced metrology by offline SEM data processing
Today’s technology nodes contain more and more complex designs bringing increasing challenges to chip manufacturing process steps. It is necessary to have an efficient metrology to assess process variability of these complex patterns and thus extract relevant data to generate process aware design rules and to improve OPC models. Today process variability is mostly addressed through the analysis of in-line monitoring features which are often designed to support robust measurements and as a consequence are not always very representative of critical design rules. CD-SEM is the main CD metrology technique used in chip manufacturing process but it is challenged when it comes to measure metrics like tip to tip, tip to line, areas or necking in high quantity and with robustness. CD-SEM images contain a lot of information that is not always used in metrology. Suppliers have provided tools that allow engineers to extract the SEM contours of their features and to convert them into a GDS. Contours can be seen as the signature of the shape as it contains all the dimensional data. Thus the methodology is to use the CD-SEM to take high quality images then generate SEM contours and create a data base out of them. Contours are used to feed an offline metrology tool that will process them to extract different metrics. It was shown in two previous papers that it is possible to perform complex measurements on hotspots at different process steps (lithography, etch, copper CMP) by using SEM contours with an in-house offline metrology tool. In the current paper, the methodology presented previously will be expanded to improve its robustness and combined with the use of phylogeny to classify the SEM images according to their geometrical proximities.
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