J. Pradelles, Y. Blancquaert, S. Landis, L. Pain, G. Rademaker, I. Servin, G. de Boer, P. Brandt, M. Dansberg, R. Jager, J. Peijster, E. Slot, S. Steenbrink, M. Wieland
{"title":"Performance validation of Mapper FLX-1200","authors":"J. Pradelles, Y. Blancquaert, S. Landis, L. Pain, G. Rademaker, I. Servin, G. de Boer, P. Brandt, M. Dansberg, R. Jager, J. Peijster, E. Slot, S. Steenbrink, M. Wieland","doi":"10.1117/12.2324054","DOIUrl":null,"url":null,"abstract":"Operating maskless, massively parallel electron beam direct write (MEBDW) is an attractive alternative to optical lithography in micro and nano device manufacturing. Mapper Lithography develops MEBDW tools able to pattern wafers, for application nodes down to 28nm, with a throughput around one wafer per hour. A prototype tool from this series, named FLX-1200, is installed in the CEA-Leti clean room. This paper reviews the current performances of this prototype and the methodology used to measure them. On standardized exposure, consisting of 100 fields of 5×5mm2 exposed, in less than one hour, on 300mm silicon wafers, we obtained CD uniformity below 10nm (3σ) and LWR of 4.5nm for 60nm half pitch dense lines. We also demonstrate capability of 15nm and 25nm (3σ) for stitching and overlay errors respectively.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"212 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Mask and Lithography Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2324054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Operating maskless, massively parallel electron beam direct write (MEBDW) is an attractive alternative to optical lithography in micro and nano device manufacturing. Mapper Lithography develops MEBDW tools able to pattern wafers, for application nodes down to 28nm, with a throughput around one wafer per hour. A prototype tool from this series, named FLX-1200, is installed in the CEA-Leti clean room. This paper reviews the current performances of this prototype and the methodology used to measure them. On standardized exposure, consisting of 100 fields of 5×5mm2 exposed, in less than one hour, on 300mm silicon wafers, we obtained CD uniformity below 10nm (3σ) and LWR of 4.5nm for 60nm half pitch dense lines. We also demonstrate capability of 15nm and 25nm (3σ) for stitching and overlay errors respectively.
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