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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)最新文献

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Why you should be interested in technology roadmaps for compound semiconductors 为什么你应该对化合物半导体的技术路线图感兴趣
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964337
H. Bennett
{"title":"Why you should be interested in technology roadmaps for compound semiconductors","authors":"H. Bennett","doi":"10.1109/GAAS.2001.964337","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964337","url":null,"abstract":"Unlike the silicon semiconductor industry, the compound semiconductor industry does not have an international consensus for a few selected applications and markets to set priorities for investments. The main purpose of this paper is to increase the awareness among industrial decision-makers about the need for an international consensus or technology roadmap concerning selected compound semiconductors. Reasons are given for why there needs to be more wide-spread involvement in technology roadmaps for compound semiconductors. The technical challenges presented by predictive computer simulations, high performance analog-to-digital converters, and RF power devices are three areas from among many for which technology roadmaps would be appropriate.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130966827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A DC-45 GHz metamorphic HEMT traveling wave amplifier 一种dc - 45ghz变质HEMT行波放大器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964363
R. Leoni, S. Lichwala, J. G. Hunt, C. Whelan, P. Marsh, W. Hoke, T. Kazior
{"title":"A DC-45 GHz metamorphic HEMT traveling wave amplifier","authors":"R. Leoni, S. Lichwala, J. G. Hunt, C. Whelan, P. Marsh, W. Hoke, T. Kazior","doi":"10.1109/GAAS.2001.964363","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964363","url":null,"abstract":"Metamorphic HEMT (MHEMT) technology is capable of providing InP based HEMT performance at GaAs based HEMT levels of manufacturability and cost. This makes the MHEMT an attractive alternative for low noise, high frequency, and wide bandwidth applications. The authors describe the performance of a DC-45 GHz MHEMT traveling wave amplifier (TWA) that is well suited for broadband applications such as 40 Gb/s fiber-optic receivers. The amplifier provides a typical noise figure of 2 dB and output powers in excess of 3 dBm.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"169 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132560510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Evaluation of 4" InP(Fe) substrates for production of HBTs 4" InP(Fe)衬底用于HBTs生产的评价
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964373
D. A. Clark
{"title":"Evaluation of 4\" InP(Fe) substrates for production of HBTs","authors":"D. A. Clark","doi":"10.1109/GAAS.2001.964373","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964373","url":null,"abstract":"Large-scale fabrication of heterojunction bipolar transistors (HBTs) for digital wireless, cellular and fiber optic telecommunication systems is creating a need for high quality, large diameter semi-insulating InP(Fe) substrate crystals. The purpose of this paper is to review the evolution and current state of commercially available 4\" InP(Fe) substrates, compared to smaller substrates (Bliss, 1999) and compared to specifications for GaAs(SI) on resistivity, EPD, thickness, flatness and orientation.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132651052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Extremely high P1dB MMIC amplifiers for Ka-band applications 用于ka波段应用的极高P1dB MMIC放大器
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964359
R. Lai, R. Grundbacher, M. Barsky, A. Oki, M. Siddiqui, B. Pitman, R. Katz, P. Tran, L. Callejo, D. Streit
{"title":"Extremely high P1dB MMIC amplifiers for Ka-band applications","authors":"R. Lai, R. Grundbacher, M. Barsky, A. Oki, M. Siddiqui, B. Pitman, R. Katz, P. Tran, L. Callejo, D. Streit","doi":"10.1109/GAAS.2001.964359","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964359","url":null,"abstract":"In this paper we describe single stage and two-stage MMIC power amplifier data at Ka-band. An extremely high P1dB power density of 700 mW/mm and 571 mW/mm were measured for the 1-stage and 2-stage GaAs HEMT MMIC amplifiers respectively. When biased for optimal IP3, 4.5 W/mm and 2.1 W/mm were achieved respectively. The performance of the latter 2-stage MMIC PA is achieved in a very compact design of 4.08 mm/sup 2/ total MMIC area. These are believed to be among the best numbers reported for linear power amplifiers at Ka-band.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115066361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
RF vs. DC breakdown: implication on pulsed radar applications [MESFETs] 射频与直流击穿:对脉冲雷达应用的影响[mesfet]
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964370
Yu Zhang, S. Cherepko, J.C.M. Hwang, S. Halder, K. Radhakrishnan, G. Ng, J. Muraro, A. Bensoussan, J. Cazaux, M. Soulard
{"title":"RF vs. DC breakdown: implication on pulsed radar applications [MESFETs]","authors":"Yu Zhang, S. Cherepko, J.C.M. Hwang, S. Halder, K. Radhakrishnan, G. Ng, J. Muraro, A. Bensoussan, J. Cazaux, M. Soulard","doi":"10.1109/GAAS.2001.964370","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964370","url":null,"abstract":"RF breakdown characteristics of GaAs MESFETs were found to correlate well with their DC breakdown characteristics, provided sufficient dwell time at the quiescent state with sufficient drain-gate voltage was allowed before the MESFETs were turned on. This implies that, for radar applications in which MESFET power amplifiers are rapidly cycled on and off by pulsing the drain voltage, their performance and reliability may be compromised.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115580495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A compact GaAs MESFET-based push-push oscillator MMIC using differential topology with low phase-noise performance 一种紧凑的基于GaAs mesfet的推推式振荡器MMIC，采用差分拓扑，具有低相位噪声性能
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964342
Sang‐Woong Yoon, Chang-Ho Lee, Min-Gun Kim, Chung-Hwan Kim, Jaejin Lee, J. Laskar, Songcheol Hong
{"title":"A compact GaAs MESFET-based push-push oscillator MMIC using differential topology with low phase-noise performance","authors":"Sang‐Woong Yoon, Chang-Ho Lee, Min-Gun Kim, Chung-Hwan Kim, Jaejin Lee, J. Laskar, Songcheol Hong","doi":"10.1109/GAAS.2001.964342","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964342","url":null,"abstract":"We present a fully integrated 6.7 GHz push-push oscillator MMIC using a cross-coupled differential topology with a capacitive coupling feedback in a commercial GaAs MESFET process. The push-push oscillator shows phase noise of -118.83 dBc/Hz at an offset frequency of 600 kHz with a 3.3 V supply voltage. This low phase-noise performance is comparable to, or better than, the best reported results of 5/spl sim/6 GHz-band oscillators implemented in CMOS and SiGe HBT processes. A 6.4 GHz fundamental oscillator MMIC using the cross-coupled differential topology was also fabricated. The measured phase-noise of the fundamental oscillator is -108 dBc/Hz at an offset frequency of 600 kHz. In addition to the low phase-noise, the push-push oscillator in this paper occupies a compact area of 480/spl times/500 /spl mu/m/sup 2/. To our knowledge, it is the first implementation of a GaAs MESFET-based push-push oscillator MMIC using the cross-coupled differential topology with capacitive coupling feedback. This work is also the first report that shows the low phase-noise performance of the push-push oscillator using the differential topology as compared with that of the fundamental oscillator.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124138052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
40 GHz fully integrated and differential monolithic VCO with wide tuning range in AlInAs/InGaAs HBT 40ghz全集成差分单片压控振荡器，具有宽调谐范围的AlInAs/InGaAs HBT
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/gaas.2001.964362
A. Kurdoghlian, M. Mokhtari, C. Fields, M. Wetzel, M. Sokolich, M. Micovic, S. Thomas, B. Shi, M. Sawins
{"title":"40 GHz fully integrated and differential monolithic VCO with wide tuning range in AlInAs/InGaAs HBT","authors":"A. Kurdoghlian, M. Mokhtari, C. Fields, M. Wetzel, M. Sokolich, M. Micovic, S. Thomas, B. Shi, M. Sawins","doi":"10.1109/gaas.2001.964362","DOIUrl":"https://doi.org/10.1109/gaas.2001.964362","url":null,"abstract":"A fully integrated and differential AlInAs/InGaAs HBT voltage controlled oscillator (VCO) with wide tuning range was demonstrated for 40 GHz wireless and optical communication applications. To our knowledge, this 40 GHz IC is the highest frequency fundamental mode fully integrated and differential VCO with wide tuning range ever reported. This VCO delivers a typical differential output power of +5 dBm at a center frequency of 39 GHz with a tuning range of up to 3.5 GHz. Co-planar waveguide (CPW) circuit designs has been employed for the development of the InP HBT MMIC VCOs to reduce chip cost and make them flip chip compatible. The measured phase noise shows -95 dBc/Hz at 1 MHz offset and -75 dBc/Hz at 100 KHz offset. The VCO was realized in a high yield optical lithography triple mesa HBT process. Circuit performance was relatively insensitive to process variation indicating a highly robust circuit design and process.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116571522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz 转移衬底InP/InGaAs/InP双异质结双极晶体管，f/sub max/=425 GHz
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964374
S. Lee, H. Kim, M. Urteaga, S. Krishnan, Y. Wei, M. Dahstrom, M. Rodwell
{"title":"Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz","authors":"S. Lee, H. Kim, M. Urteaga, S. Krishnan, Y. Wei, M. Dahstrom, M. Rodwell","doi":"10.1109/GAAS.2001.964374","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964374","url":null,"abstract":"We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) with power gain cut-off frequency f/sub max/=425 GHz and current gain cut-off frequency f/sub t/=141 GHz using transferred-substrate technology. This is the highest reported f/sub max/ for a DHBT. The breakdown voltage BV/sub CEO/ is 8 V at J/sub C/=5/spl times/10/sup 4/ A/cm/sup 2/ and the DC current gain /spl beta/ is 43.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115810563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Application of silicon-germanium technology for wireless handsets: a CDMA tri-mode chip set 硅锗技术在无线手机上的应用:CDMA三模芯片组
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964338
D. Barlas
{"title":"Application of silicon-germanium technology for wireless handsets: a CDMA tri-mode chip set","authors":"D. Barlas","doi":"10.1109/GAAS.2001.964338","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964338","url":null,"abstract":"SiGe technology has been evolving over the last decade and a half (Patton et al, 1990; Schuppen et al, 1995; Kasper et al, 1993; Schuppen et al, 1998; Barlas et al, 1999.). During the last few years, there has been much debate with regard to the pros and cons and viability of SiGe based RF devices for wireless applications. This paper describes the design, development and performance of an IS 95/98 dual band tri-mode chip-set using commercially available SiGe bipolar and BiCMOS foundry processes.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125474760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
SSPAs & TWTAs: an evolutive situation for electronic warfare applications SSPA 和 TWTA：电子战应用的发展形势
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI: 10.1109/GAAS.2001.964366
F. Murgadella, F. Payen, P. Coulon
{"title":"SSPAs & TWTAs: an evolutive situation for electronic warfare applications","authors":"F. Murgadella, F. Payen, P. Coulon","doi":"10.1109/GAAS.2001.964366","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964366","url":null,"abstract":"One of the most specific military needs in microwave power amplification is wide band capability. Indeed, in order to fulfil electronic warfare specifications, amplifiers have to provide (from S- to Ku-band) a high level of output power taking into account Power Added Efficiency (PAE) and cost. Results obtained on MMICs (HBT devices) and TWTAs (MPMs) are presented in the 6-18 GHz instantaneous bandwidth. Current and anticipated results show that systems designer will have to take major improvements into account: this will lead to extensive competition in the near future between these two technologies.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128041385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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