RF vs. DC breakdown: implication on pulsed radar applications [MESFETs]

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964370

Yu Zhang, S. Cherepko, J.C.M. Hwang, S. Halder, K. Radhakrishnan, G. Ng, J. Muraro, A. Bensoussan, J. Cazaux, M. Soulard

引用次数: 1

Abstract

RF breakdown characteristics of GaAs MESFETs were found to correlate well with their DC breakdown characteristics, provided sufficient dwell time at the quiescent state with sufficient drain-gate voltage was allowed before the MESFETs were turned on. This implies that, for radar applications in which MESFET power amplifiers are rapidly cycled on and off by pulsing the drain voltage, their performance and reliability may be compromised.

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射频与直流击穿:对脉冲雷达应用的影响[mesfet]

研究发现，只要在mesfet导通之前有足够的静息时间和足够的漏极电压，GaAs mesfet的射频击穿特性与其直流击穿特性具有良好的相关性。这意味着，在雷达应用中，MESFET功率放大器通过脉冲漏极电压快速循环打开和关闭，其性能和可靠性可能会受到损害。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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